scholarly journals Biocompatibility and Antibacterial Properties of TiCu(Ag) Thin Films Produced by Physical Vapor Deposition Magnetron Sputtering

2021 ◽  
Author(s):  
Saqib Rashid ◽  
Gian Marco Vita ◽  
Luca Persichetti ◽  
Giovanna Iucci ◽  
Chiara Battocchio ◽  
...  
Keyword(s):  
Thin Films ◽  
Tissue Engineering ◽  
Magnetron Sputtering ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Human Fibroblasts ◽  
Engineering Applications ◽  
X Ray ◽  
Structural And Functional Properties ◽  
Bactericidal Properties

Mechanical robustness, biocompatibility, and antibacterial performances are key features for materials suitable to be used in tissue engineering applications. In this work, we investigated the link existing between structural and functional properties of TiCu(Ag) thin films deposited by physical vapor deposition magnetron sputtering on Si substrates. The thin films were characterized by X-ray diffraction (XRD), nanoindentation, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The TiCu(Ag) thin films showed complete amorphous structure and improved mechanical properties in comparison with pure Ti films. However, for contents in excess of 20% Ag, we observed the appearance of nanometric Ag crystallite. The TiCu(Ag) thin films displayed excellent biocompatibility properties, allowing adhesion and proliferation of the human fibroblasts MRC-5 cell line. Moreover, all the investigated TiCu(Ag) alloy display bactericidal properties, preventing the growth of both Pseudomonas aeruginosa and Staphylococcus aureus. Results obtained from biological tests have been correlated to the surface structure and microstructure of films. The excellent biocompatibility and bactericidal properties of these multifunctional thin films opens to their use in tissue engineering applications.

scholarly journals Biocompatibility and antibacterial properties of TiCu(Ag) thin films produced by physical vapor deposition magnetron sputtering

2021 ◽  
pp. 151604
Author(s):  
Saqib Rashid ◽  
Gian Marco Vita ◽  
Luca Persichetti ◽  
Giovanna Iucci ◽  
Chiara Battocchio ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Antibacterial Properties

Microstructure and Properties of CoSi2 Thin Films on (100) Silicon by Laser Physical Vapor Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
R. Chowdhury ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microstructure And Properties ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Deposited Films

ABSTRACTLaser physical vapor deposition (LPVD) has been used to deposit thin CoSi2 films on (001)silicon at different substrate temperatures ranging from room temperature to 600°C. Particulate-free silicide thin films were characterized by X-ray diffraction, Rutherford backscattering, and high resolution transmission electron microscopy. We have found that films deposited at 200°C and below are amorphous; 400°C deposited films are polycrystalline whereas films deposited at 600°C are of epitaxial nature. The Effect of subsequent annealing on resistivity of room-temperature deposited thin films has been investigated. The resistivity value decreases to less than 15 μΩcm after annealing making these films suitable for microelectronics applications. The correlation between microstructure and properties of these films are discussed.

scholarly journals Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 145
Author(s):  
Miłosz Grodzicki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Properties ◽  
Vapor Deposition ◽  
Direct Contact ◽  
Physical Vapor Deposition ◽  
Metal Films ◽  
Surface Alloying ◽  
X Ray ◽  
Physical Vapor Deposition Method

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite form, (0001) oriented, are summarized. Thin films of several elements—manganese, nickel, palladium, arsenic, and antimony—were formed by the physical vapor deposition method. The results of the bare surfaces, as well as the thin film/GaN(0001) phase boundaries presented, were characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information on the electronic properties of GaN(0001) surfaces are shown. Different behaviors of the thin films, after postdeposition annealing in ultrahigh vacuum conditions such as surface alloying and subsurface dissolving and desorbing, were found. The metal films formed surface alloys with gallium (MnGa, NiGa, PdGa), while the semimetal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate could react with it, modifying the surface properties of GaN(0001).

scholarly journals Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI3 Thin Films by RF-Magnetron Sputtering

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Sara Bonomi ◽  
Daniela Marongiu ◽  
Nicola Sestu ◽  
Michele Saba ◽  
Maddalena Patrini ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Rf Magnetron Sputtering

scholarly journals Influence of Interfacial Neighborhood on Residual Stress due to Deposition of TiN Thin Films Made by PVD

2005 ◽  
Vol 490-491 ◽  
pp. 601-606
Author(s):  
Hajime Hirose ◽  
Shinya Suzuki ◽  
Masahide Gotoh ◽  
Toshihiko Sasaki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Stress Measurement ◽  
X Rays ◽  
Full Width ◽  
Half Maximum ◽  
X Ray ◽  
Tin Thin Films

In depositing the TiN thin films to the substrate by Physical Vapor Deposition (PVD), it influences the substrate interface. Change of the residual stress and the full-width at half maximum (FWHM) in each process of the TiN deposition of thin film was measured by the X-ray stress measurement. As a result of the X-ray stress measurement, there are no changes in the residual stress and the FWHM. It is thought that there is a difference in the penetration depth to the substrate of X-rays and Ti ion.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

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