An Accurate Model for Prediction of Hydrocarbon Gas MMP Based on a Large High-Temperature Data Set

2020 ◽  
Author(s):  
Kristian Mogensen
2013 ◽  
Vol 551 ◽  
pp. 551-555 ◽  
Author(s):  
Yifeng Hu ◽  
Mingcheng Sun ◽  
Sannian Song ◽  
Zhitang Song ◽  
Jiwei Zhai

1999 ◽  
Author(s):  
Robin Stevenson

Abstract This paper demonstrates that the material properties developed using conventional material test procedures can be consistent with those developed during machining. However if extensive extrapolation is required to develop the high strain/high strain rate/high temperature data characteristic of machining, it is important to ensure that no change in deformation mechanism occurs over the extrapolation range. If such a mechanism change does occur the extrapolated data will be invalid.


2017 ◽  
Vol 64 (4) ◽  
pp. 1426-1432 ◽  
Author(s):  
Ashfaqur Rahman ◽  
Landon Caley ◽  
Sajib Roy ◽  
Nathan Kuhns ◽  
Alan Mantooth ◽  
...  

2006 ◽  
Vol 21 (1) ◽  
pp. 19-24 ◽  
Author(s):  
C. J. Ball

The lattice parameters of α-alumina have been determined for temperatures in the range 20<T<1050 °C, using the lattice parameter of tungsten as a thermometer and a simple furnace in the diffractometer on the Australian beamline at the Photon Factory, Tsukuba, Japan. It is shown that the accuracy of this technique for measurement of cell parameters at temperatures up to ∼1200 °C is limited at present by uncertainty in the cell parameters of the reference material (i.e., tungsten) at high temperatures. Some problems with the equipment are discussed.


1989 ◽  
Vol 163 ◽  
Author(s):  
D. Mathiot ◽  
D. Ballutaud ◽  
P. De Mierry ◽  
M. Aucouturier

AbstractA model is proposed to describe hydrogen motion in silicon near 150°C. This model leads to a consistent view of H° behaviour in low doped n and p-type Si, with a diffusivity in agreement with the high temperature data. On the other hand, a systematic variation of DH+ with the boron concentration forces us to conclude that some still unknown interactions take place and contribute to hydrogen trapping in highly doped p-Si.


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