scholarly journals High Temperature Data Converters in Silicon Carbide CMOS

2017 ◽  
Vol 64 (4) ◽  
pp. 1426-1432 ◽  
Author(s):  
Ashfaqur Rahman ◽  
Landon Caley ◽  
Sajib Roy ◽  
Nathan Kuhns ◽  
Alan Mantooth ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Data Converters ◽  
Temperature Data ◽  
High Temperature Data

Low Power Silicon Carbide RS-485 Transceiver

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000257-000262 ◽  
Author(s):  
M. R. Benavides ◽  
A. N. Castillo ◽  
A. Rahman ◽  
M. Barlow ◽  
D. Abreu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Low Power ◽  
Data Acquisition ◽  
Propagation Delay ◽  
Transmission System ◽  
Temperature Data ◽  
Deep Earth ◽  
High Temperature Data ◽  
Potential Applications

Abstract This paper describes the first RS-485 transceiver for high temperature applications designed in SiC-CMOS. The transceiver was designed and developed in a 1.2μm CMOS HiTSiC® process from Raytheon UK. It has been tested at a voltage supply of 15 V from temperatures of 25°C to 400°C. At 320°C, the rise and fall times are 40 ns (for both), and the propagation delay from driver to output high and to output low is 150 ns and 50 ns respectively. The transceiver has been demonstrated to operate over 700 m of Cat5 cable. A high temperature data acquisition and transmission system has potential applications such as deep earth drilling, remote connection to high temperature locations, and high temperature data acquisition.

Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application

2013 ◽  
Vol 551 ◽  
pp. 551-555 ◽  
Author(s):  
Yifeng Hu ◽  
Mingcheng Sun ◽  
Sannian Song ◽  
Zhitang Song ◽  
Jiwei Zhai
Keyword(s):  
High Temperature ◽  
Low Power ◽  
Phase Change ◽  
Temperature Data ◽  
Data Retention ◽  
High Temperature Data ◽  
Power Application

Material Properties as Indicators of Machining Behavior

1999 ◽  
Author(s):  
Robin Stevenson
Keyword(s):  
High Temperature ◽  
High Strain Rate ◽  
Strain Rate ◽  
Deformation Mechanism ◽  
Material Properties ◽  
High Strain ◽  
Temperature Data ◽  
Test Procedures ◽  
High Temperature Data ◽  
Conventional Material

Abstract This paper demonstrates that the material properties developed using conventional material test procedures can be consistent with those developed during machining. However if extensive extrapolation is required to develop the high strain/high strain rate/high temperature data characteristic of machining, it is important to ensure that no change in deformation mechanism occurs over the extrapolation range. If such a mechanism change does occur the extrapolated data will be invalid.

Determination of lattice parameters from synchrotron powder data: A study using high temperature data for tungsten and alumina

2006 ◽  
Vol 21 (1) ◽  
pp. 19-24 ◽  
Author(s):  
C. J. Ball
Keyword(s):  
High Temperature ◽  
Reference Material ◽  
High Temperatures ◽  
Lattice Parameter ◽  
Temperature Data ◽  
Lattice Parameters ◽  
Cell Parameters ◽  
Photon Factory ◽  
High Temperature Data

The lattice parameters of α-alumina have been determined for temperatures in the range 20<T<1050 °C, using the lattice parameter of tungsten as a thermometer and a simple furnace in the diffractometer on the Australian beamline at the Photon Factory, Tsukuba, Japan. It is shown that the accuracy of this technique for measurement of cell parameters at temperatures up to ∼1200 °C is limited at present by uncertainty in the cell parameters of the reference material (i.e., tungsten) at high temperatures. Some problems with the equipment are discussed.

Modeling of the Diffusion of Hydrogen in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
D. Mathiot ◽  
D. Ballutaud ◽  
P. De Mierry ◽  
M. Aucouturier
Keyword(s):  
High Temperature ◽  
Boron Concentration ◽  
Temperature Data ◽  
The Other ◽  
Systematic Variation ◽  
Hydrogen Trapping ◽  
Other Hand ◽  
High Temperature Data ◽  
P Type ◽  
Diffusion Of Hydrogen

AbstractA model is proposed to describe hydrogen motion in silicon near 150°C. This model leads to a consistent view of H° behaviour in low doped n and p-type Si, with a diffusivity in agreement with the high temperature data. On the other hand, a systematic variation of DH+ with the boron concentration forces us to conclude that some still unknown interactions take place and contribute to hydrogen trapping in highly doped p-Si.

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