scholarly journals Optoelectronic and Birefringence Properties of Weakly Mg Doped ZnO Thin Films Prepared by Spray Pyrolysis

2021 ◽  
Author(s):  
Yassine Bouachibaa ◽  
ABDELOUADOUD MAMMERI ◽  
Abderrahmane Bouabellou ◽  
oualid rabia ◽  
Saber Saidi ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Transverse Magnetic ◽  
Charge Carriers ◽  
Laser Source ◽  
Transverse Magnetic Mode ◽  
Prism Coupler ◽  
Significant Difference ◽  
Mg Content ◽  
Mg Doped

Abstract MgxZn1−xO thin films were deposited on glass substrate with x varied between 0.01 and 0.05 by spray pyrolysis at a temperature of 450 °C. The structural investigation showed that all thin films had ZnO wurtzite structure with a preferred (002) orientation. The gap energy was calculated using Tauc’s plot and it decreased over the Mg content by 0.07 eV. The charge carriers’ density dropped by an order of 105 as Mg content increased whereas the resistivity and the mobility increased. SEM observations revealed a significant difference between undoped and doped thin films. A 632.8 nm laser source prism coupler revealed 2 optical modes for every thin film in each Transverse Electric and Transverse Magnetic mode, the birefringence of the Mg doped films was positive. Both ordinary and extraordinary refractive indexes were found to decrease as the Mg content increased. Great intention has been paid to the relation between the refractive, charge carriers density and the optical band gap.

scholarly journals Optoelectronic and Birefringence Properties of Weakly Mg Doped ZnO Thin films Prepared By Spray Pyrolysis.

2021 ◽  
Author(s):  
Yassine Bouachibaa ◽  
ABDELOUADOUD MAMMERI ◽  
Abderrahmane Bouabellou ◽  
Rabia Oualid ◽  
Saber Saidi ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Transverse Magnetic ◽  
Charge Carriers ◽  
Laser Source ◽  
Transverse Magnetic Mode ◽  
Prism Coupler ◽  
Significant Difference ◽  
Mg Content ◽  
Mg Doped

Abstract MgxZn1−xO thin films were deposited on glass substrate with x varied between 0.01 and 0.05 by spray pyrolysis at a temperature of 450 °C. The structural investigation showed that all thin films had ZnO wurtzite structure with a preferred (002) orientation. The gap energy was calculated using Tauc’s plot and it decreased over the Mg content by 0.07 eV. The charge carriers’ density dropped by an order of 105 as Mg content increased whereas the resistivity and the mobility increased. SEM observations revealed a significant difference between undoped and doped thin films. A 632.8 nm laser source prism coupler revealed 2 optical modes for every thin film in each Transverse Electric and Transverse Magnetic mode, the birefringence of the Mg doped films was positive. Both ordinary and extraordinary refractive indexes were found to decrease as the Mg content increased. Great intention has been paid to the relation between the refractive, charge carriers density and the optical band gap.

scholarly journals Reduced leakage currents and possible charge carriers tuning in Mg-doped Ga0.6Fe1.4O3 thin films

2012 ◽  
Vol 100 (26) ◽  
pp. 262904 ◽  
Author(s):  
C. Lefevre ◽  
R. H. Shin ◽  
J. H. Lee ◽  
S. H. Oh ◽  
F. Roulland ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Carriers ◽  
Leakage Currents ◽  
Mg Doped

scholarly journals Spray Pyrolysis Synthesis of Pure and Mg-Doped Manganese Oxide Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 598
Author(s):  
Mohamed Amine Dahamni ◽  
Mostefa Ghamnia ◽  
Salah Eddine Naceri ◽  
Carole Fauquet ◽  
Didier Tonneau ◽  
...  
Keyword(s):  
Thin Films ◽  
Manganese Oxide ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Oxide Thin Films ◽  
Xps Spectra ◽  
X Ray ◽  
Mg Doping ◽  
Uv Visible ◽  
Mg Doped

Pure and Mg-doped manganese oxide thin films were synthesized on heated glass substrates using the spray pyrolysis technique. The surface chemical composition was investigated by the use of X-ray photoelectron spectroscopy (XPS). Structural and morphological properties were studied by using X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscopy (AFM). Optical properties were characterized by UV-visible spectroscopy. XPS spectra showed typical Mn (2p3/2), (2p1/2) and O (1s) peaks of Mn3O4 with a slight shift attributed to the formation of different chemical states of manganese. XRD analysis revealed the tetragonal phase of Mn3O4 with a preferred (211) growth orientation that improved with Mg-doping; likewise, grain size is observed to increase with the Mg doping. SEM images of Mn3O4 films showed rough surfaces composed of uniformly distributed nanograins whose size decreases with the Mg-doping. The manganese oxide films surface observed in AFM show a textured, rough and porous surface. The combination of transmittance and absorption data in the UV-visible range allowed determining the energy values of the Eg band gap (1.5–2.5 eV). The decrease of the band gap with the Mg-doping increase is attributed to the influence of the greater size of the Mg2+ ion in the manganese oxide lattice.

Effect of Mg dopant on SnO2 thin films grown by spray pyrolysis technique

2019 ◽  
Vol 33 (04) ◽  
pp. 1950030 ◽  
Author(s):  
Demet İskenderoğlu ◽  
Harun Güney
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
X Ray ◽  
Mg Doping ◽  
Sno2 Thin Films ◽  
Gas Measurements ◽  
Doping Ratio ◽  
Absorption Measurements ◽  
Mg Doped

The undoped and magnesium (Mg)-doped Tin (IV) oxide (SnO2) thin films were grown on glass substrate by spray pyrolysis technique. In order to observe the effect on the optical, structural, morphological, and hydrogen (H2) gas answer properties of SnO2 by Mg doping, X-ray diffractometer (XRD), ultraviolet–visible (UV) spectrometer, scanning electron microscope (SEM) and hydrogen (H2) gas, measurements were taken. The absorption measurements of undoped and Mg-doped SnO2 thin films demonstrated that band gaps varied with the changing Mg dopant ratio and this variation may be from Burstein–Moss (BM) effect. XRD measurements showed that the samples were tetragonal structures and have (110), (101), (200), (211), (220), (310) planes. The surface morphology of SnO2 showed that samples was affected considerably by Mg dopant. The H2 gas sensor response improves with the increase of 1%, 2% and 3% Mg doping ratio in SnO2.

scholarly journals Effect of Gamma Irradiation on the Optical Properties of Mg Doped CdO Thin Films Deposited by Spray Pyrolysis

2013 ◽  
Vol 16 ◽  
pp. 26-37 ◽  
Author(s):  
Majid H. Hassouni ◽  
Khudheir A. Mishjil ◽  
Sami S. Chiad ◽  
Nadir F. Habubi
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Spray Pyrolysis ◽  
Optical Constants ◽  
Spray Pyrolysis Technique ◽  
Before And After ◽  
Γ Rays ◽  
Cdo Thin Films ◽  
Transmission And Absorption ◽  
Mg Doped

Thin films of CdO and 9% Mg doped CdO doped have been prepared using spray pyrolysis technique. Transmission and absorption spectra were recorded in order to estimate these films. The deposited thin films were exposed to γ - rays. We have studied the transmission, absorptions and absorption coefficient as a function of photon energy before and after irradiation. The optical constants such as: reflectance, extinction coefficient, refractive index, real and imaginary parts of the dielectric constant and the electrical conductivity were calculated also.

scholarly journals Structural and Optical Characterization of Magnesium Doped Zinc Oxide Thin Films Deposited by Spray Pyrolysis

2016 ◽  
Vol 64 (1) ◽  
pp. 1-6
Author(s):  
Mitali Biswas ◽  
Mehnaz Sharmin ◽  
Chitra Das ◽  
Jibon Poddar ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Refractive Index ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical Parameters ◽  
Doped Zno ◽  
Mg Doped

Pure and magnesium (Mg) doped zinc oxide (ZnO) thin films were prepared onto clean glass substrate by spray pyrolysis (SP) technique at the substrate temperature of 300°C. Various optical parameters such as absorption co-efficient, band gap energy, refractive index, extinction coefficient of the thin films were studied using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300-2500 nm. Optical band gap increased from 3.24 to 3.46 eV with the increase of Mg concentration from 0 to 40%. Transmittance and refractive index of the Mg doped ZnO thin films decreased due to the increase of Mg concentration. The EDX spectra confirmed the increase of Mg and consequent reduction in Zn content in the Mg doped ZnO thin films. Pure and Mg- doped ZnO films were annealed at 425°C for 1 hour. X-ray diffraction (XRD) study of the annealed films showed hexagonal type of polycry-stalline structure with the preferred orientation along (101) plane with some other peaks (100), (002), (102), (110), (103) and (112). From the XRD patterns it was found that grain size decreased from 63.45 to 36.56 nm, lattice constant _ and c remained almost constant with Mg doping concentration.Dhaka Univ. J. Sci. 64(1): 1-6, 2016 (January)

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