A New Chemical-Mechanical Polishing Method Based On Colloids Silica and MgO Was Developed For Polishing Y3Al5O12 Material

Abstract The material yttrium aluminum oxide (Y3Al5O12) is one of the materials commonly used in laser devices. For application in optical devices, it is necessary to produce ultra-precise surface quality, however, Y3Al5O12 material belongs to the group of difficult-to-machine materials with high brittleness and hardness. Therefore, it is very difficult to ensure that the main criterion when finishing this material to produce a quality surface in the nanometer form with the ability to remove the material is very difficult. To solve this problem, this work provided a new chemical - mechanical polishing mixture. The proposed polishing mixture of ZrO2, Na2SiO3–5H2O, and MgO abrasives has a weight ratio of 8%, 5% and 1% respectively, with the remainder being deionized water. The surface result after polishing is obtained with a material removed rate of 38 (nm/min) along with an ultra-smooth surface produced with Ra = 0.41 nm. With the help of X-ray photoelectron spectroscopy (XPS) method before and after polishing by CMS, the reaction mechanisms were elucidated. Analytical results show that Y3Al5O12 material produces YOOH and AlOOH in Na2SiO3 solution, then combines with –Si–OH to form (Y-Si) and (Al-Si) with significantly reduced hardness compared to other Y3Al5O12 materials, these products combine with MgO to form montmorillonites (3MgO–Al2O3–3SiO2–3Y2O3–5Al2O3). With this formation, the surface layer of Y3Al5O12 material becomes soft and is easily removed by ZrO2 abrasive particles under the influence of mechanical polishing, resulting in superfine surfaces are generated from the proposed CMS model.

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X-Ray Photoelectron Spectroscopy Study on the Interaction of Yttrium-Aluminum Oxide with Fluorine-Based Plasma

Journal of the American Ceramic Society ◽

10.1111/j.1551-2916.2011.04589.x ◽

2011 ◽

Vol 94 (10) ◽

pp. 3455-3459 ◽

Cited By ~ 28

Author(s):

Dae-Min Kim ◽

Sang-Ho Lee ◽

William B. Alexander ◽

Kyeong-Beom Kim ◽

Yoon-Suk Oh ◽

...

Keyword(s):

Aluminum Oxide ◽

Photoelectron Spectroscopy ◽

Spectroscopy Study ◽

Yttrium Aluminum Oxide ◽

X Ray ◽

Yttrium Aluminum

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Slurry Retention and Transport during Chemical-Mechanical Polishing of Copper

MRS Proceedings ◽

10.1557/proc-671-m4.10 ◽

2001 ◽

Vol 671 ◽

Cited By ~ 2

Author(s):

Anurag Jindal ◽

Ying Li ◽

Satish Narayanan ◽

S. V. Babu

Keyword(s):

Hydrogen Peroxide ◽

Chemical Mechanical Polishing ◽

Chemical Species ◽

Mechanical Polishing ◽

Abrasive Particles ◽

Step Flow ◽

Flow Experiments

ABSTRACTThis work investigates the retention and transport of chemical species and abrasive particles during chemical-mechanical polishing (CMP) of copper (Cu). “Slurry step-flow” experiments, in which the concentrations of the chemicals and abrasives in the slurry are altered in steps during polishing were conducted with hydrogen peroxide (H2O2)/glycine based slurries. Two different pads, Suba-500 and IC 1400 (with k grooves), were compared in terms of their slurry retention and transport characteristics. With these experiments, it has been shown that both the abrasives and chemicals are constantly replaced during a typical CMP process. Better polishing performance of the IC 1400 over Suba 500 is a result of improved transport of the chemicals and the abrasives between the wafer/pad interface.

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Array of high quality surface micromirrors by chemical mechanical polishing of dielectric and metal

1998 IEEE/LEOS Summer Topical Meeting. Digest. Broadband Optical Networks and Technologies: An Emerging Reality. Optical MEMS. Smart Pixels. Organic Optics and Optoelectronics (Cat. No.98TH8369) ◽

10.1109/leosst.1998.689709 ◽

2002 ◽

Author(s):

I. Underwood ◽

J.T.M. Stevenson ◽

D.W. Calton ◽

A.M. Gundlach ◽

D.G. Vass

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

High Quality ◽

Quality Surface ◽

High Quality Surface

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Investigation on Smoothing Silicon Carbide Wafer With a Combined Method of Mechanical Lapping and Photocatalysis Assisted Chemical Mechanical Polishing

Volume 4: Processes ◽

10.1115/msec2018-6615 ◽

2018 ◽

Author(s):

Zewei Yuan ◽

Kai Cheng ◽

Yan He ◽

Meng Zhang

Keyword(s):

Silicon Carbide ◽

Chemical Mechanical Polishing ◽

Material Removal ◽

Removal Rate ◽

Mechanical Polishing ◽

Combined Method ◽

Polishing Process ◽

High Quality ◽

Quality Surface ◽

High Quality Surface

The high quality surface can exhibit the irreplaceable application of single crystal silicon carbide in the fields of optoelectronic devices, integrated circuits and semiconductor. However, high hardness and remarkable chemical inertness lead to great difficulty to the smoothing process of silicon carbide. Therefore, the research presented in this paper attempts to smooth silicon carbide wafer with photocatalysis assisted chemical mechanical polishing (PCMP) by using of the powerful oxidability of UV photo-excited hydroxyl radical on surface of nano-TiO2 particles. Mechanical lapping was using for rough polishing, and a material removal model was proposed for mechanical lapping to optimize the polishing process. Several photocatalysis assisted chemical mechanical polishing slurries were compared to achieve fine surface. The theoretical analysis and experimental results indicate that the material removal rate of lapping process decreases in index form with the decreasing of abrasive size, which corresponds with the model developed. After processed with mechanical lapping for 1.5 hours and subsequent photocatalysis assisted chemical mechanical polishing for 2 hours, the silicon carbide wafer obtains a high quality surface with the surface roughness at Ra 0.528 nm The material removal rate is 0.96 μm/h in fine polishing process, which is significantly influenced by factors such as ultraviolet irradiation, electron capture agent (H2O2) and acidic environment. This combined method can effectively reduce the surface roughness and improve the polishing efficiency on silicon carbide and other hard-inert materials.

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Effect of pH on ceria–silica interactions during chemical mechanical polishing

Journal of Materials Research ◽

10.1557/jmr.2005.0176 ◽

2005 ◽

Vol 20 (5) ◽

pp. 1139-1145 ◽

Cited By ~ 28

Author(s):

Jeremiah T. Abiade ◽

Wonseop Choi ◽

Rajiv K. Singh

Keyword(s):

Photoelectron Spectroscopy ◽

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Force Measurements ◽

X Ray ◽

Force Microscopy ◽

Substrate Interaction ◽

Atomic Force ◽

Silica Removal

To understand the ceria–silica chemical mechanical polishing (CMP) mechanisms, we studied the effect of ceria slurry pH on silica removal and surface morphology. Also, in situ friction force measurements were conducted. After polishing; atomic force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy were used to quantify the extent of the particle–substrate interaction during CMP. Our results indicate the silica removal by ceria slurries is strongly pH dependent, with the maximum occurring near the isoelectric point of the ceria slurry.

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Application of chemical-mechanical polishing for planarizing of silicon nitride passivation layers used in high power III-V laser devices

Crystal Research and Technology ◽

10.1002/crat.200510552 ◽

2006 ◽

Vol 41 (2) ◽

pp. 180-185

Author(s):

Jiang Wei

Keyword(s):

Silicon Nitride ◽

High Power ◽

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Passivation Layers ◽

Laser Devices

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Chemical Mechanical Polishing of Transparent Nd:YAG Ceramics

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.375-376.278 ◽

2008 ◽

Vol 375-376 ◽

pp. 278-282 ◽

Cited By ~ 4

Author(s):

Jun Li ◽

Yong Zhu ◽

Chuang Tian Chen

Keyword(s):

Surface Roughness ◽

Atomic Force Microscope ◽

Chemical Mechanical Polishing ◽

Brittle Materials ◽

Mechanical Polishing ◽

High Quality ◽

Atomic Force ◽

Hard And Brittle Materials ◽

Quality Surface ◽

High Quality Surface

Transparent Nd:YAG ceramics which are very hard and brittle materials, are very difficult to be polished. There are many micro scratches or damages on the surface after mechanical polishing with Al2O3. In order to remove micro scratches or damages, chemical mechanical polishing (CMP) was adopted to manufacture Nd:YAG ceramics. In the polishing experiment, Pellon and Chemcloth pads were utilized for chemical mechanical polishing of Nd:YAG ceramics. Colloidal SiO2 was selected as the polishing slurry in two different polishing environments, acidity and alkalinity. The surface roughness was determined by using atomic force microscope. In this study, four polishing experimental combinations that each combination contains one of the two pads and one of the two polishing environments were carried out in the optimum polishing condition. Then the high quality surface of transparent Nd:YAG ceramics with the best surface roughness of < 0.2 nm RMS and few micro scratches or damages is obtained by adopting CMP process with Chemcloth pad and colloidal SiO2 in acidic condition.

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Dynamics of the Formation of the Subambient Pressure Distribution During Chemical-Mechanical Polishing

ASME/STLE 2007 International Joint Tribology Conference, Parts A and B ◽

10.1115/ijtc2007-44441 ◽

2007 ◽

Author(s):

A. Osorno ◽

S. Tereshko ◽

I. Yoon ◽

S. Danyluk

Keyword(s):

Integrated Circuits ◽

Pressure Distribution ◽

Chemical Mechanical Polishing ◽

Rotational Speed ◽

Silicon Wafers ◽

Mechanical Polishing ◽

Wafer Surface ◽

Abrasive Particles ◽

Pressure Distributions ◽

Time Period

Chemical-Mechanical Polishing is used to polish silicon wafers in the manufacturing of integrated circuits. Wafers are pressed, electronics side down, onto a rotating pad that is flooded with a slurry containing abrasive particles. The slurry is entrained in the interface and the abrasive particles slide against the silicon and polish it. Our previous work has shown that subambient pressures develop at the silicon/pad interface and we have measured this pressure and its distribution over the wafer surface (1). However, our experiments have been limited to those conditions where the pad rotates and the wafer slides on the pad but the wafer itself does not rotate. Our experiments showed a skewed pressure distribution. This paper describes experiments and pressure distribution measurements where the wafer, as well as the pad/platen is rotated (2). Specifically-designed wireless electronic transmitters and receivers were built and used to measure the interfacial pressures at the silicon/pad interface. Subambient stress maps and temperatures have been measured and Figure 1 shows an example of a skewed pressure distribution when the silicon is not rotated and Figure 2 shows the pressure distribution for the same wafer while it is rotating. The subambient pressures develop over a 2 second time period from when the rotation started. The pressure distributions are symmetric in spite of the lean and tilt of the wafers. The rotational speed and other variables have a big influence on the polishing rate and this will be discussed in the talk.

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A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing

Journal of Tribology ◽

10.1115/1.1828068 ◽

2005 ◽

Vol 127 (1) ◽

pp. 190-197 ◽

Cited By ~ 60

Author(s):

Yeau-Ren Jeng ◽

Pay-Yau Huang

Keyword(s):

Material Removal Rate ◽

Chemical Mechanical Polishing ◽

Material Removal ◽

Removal Rate ◽

Surface Hardness ◽

Mechanical Polishing ◽

Wafer Surface ◽

Rate Model ◽

Abrasive Particles ◽

Material Removal Rate Model

Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.

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