Advances in dielectric performance of atomically engineered perovskite nanosheet thin films

2021 ◽  
Author(s):  
Haena Yim ◽  
So Yeon Yoo ◽  
Haneul Choi ◽  
Hye Jung Chang ◽  
Seong-Ju Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Permittivity ◽  
High Performance ◽  
Density Functional ◽  
Dielectric Material ◽  
Density Functional Theory Calculations ◽  
Dead Layer ◽  
Dielectric Performance ◽  
Colossal Permittivity ◽  
High Dielectric

Abstract The search for new high-performance dielectric material receives continued research interest. Several mechanisms for high permittivity have been proposed such as BaTiO3-based perovskites or CaCu3Ti4O12. Nevertheless, developing thin films with such high performance remains a highly challenging task. However, reducing the BaTiO3-based film thickness raises the leakage current and suppresses dielectric responses because of a low-permittivity interfacial ‘dead-layer’. Here, we propose a new materials design route to great permittivity behavior in atomically-thin films, where charge engineering of layered perovskites generates giant polarizability and results in 2-dimensional materials with colossal permittivity. Firstly, we present a concrete example Dion-Jacobson type KSr2 − xBixNb3O10 and its cation-exchanged form HSr2 − xBixNb3O10, which exhibit a stable colossal permittivity and a low dielectric loss. Also, Sr2(1−x)Bi2xNb3O10 (x = 0.1) nanosheets attain by chemical exfoliation method with a high dielectric permittivity of over 500, the highest among all known dielectrics in the ultrathin films (< 20 nm). As Bi-substitution of Sr2Nb3O10, the dielectric permittivity exhibits two times higher value due to higher polarizability of Bi ions and leads larger dielectric permittivity. Density functional theory calculations suggest that the substitution of high-valent Bi ions with lone pairs are responsible for the colossal permittivity. Our results provide a strategy for achieving new high-k nanodielectrics for use in nano-scaled electronics.

scholarly journals Defect Processes in Halogen Doped SnO2

2021 ◽  
Vol 11 (2) ◽  
pp. 551
Author(s):  
Petros-Panagis Filippatos ◽  
Nikolaos Kelaidis ◽  
Maria Vasilopoulou ◽  
Dimitris Davazoglou ◽  
Alexander Chroneos
Keyword(s):  
Electronic Properties ◽  
Tin Oxide ◽  
Density Functional ◽  
Structural Changes ◽  
High Dielectric Constant ◽  
Density Functional Theory Calculations ◽  
Functional Theory ◽  
Optical And Electronic Properties ◽  
High Dielectric ◽  
Gap States

In the present study, we performed density functional theory calculations (DFT) to investigate structural changes and their impact on the electronic properties in halogen (F, Cl, Br, and I) doped tin oxide (SnO2). We performed calculations for atoms intercalated either at interstitial or substitutional positions and then calculated the electronic structure and the optical properties of the doped SnO2. In all cases, a reduction in the bandgap value was evident, while gap states were also formed. Furthermore, when we insert these dopants in interstitial and substitutional positions, they all constitute a single acceptor and donor, respectively. This can also be seen in the density of states through the formation of gap states just above the valence band or below the conduction band, respectively. These gap states may contribute to significant changes in the optical and electronic properties of SnO2, thus affecting the metal oxide’s suitability for photovoltaics and photocatalytic devices. In particular, we found that iodine (I) doping of SnO2 induces a high dielectric constant while also reducing the oxide’s bandgap, making it more efficient for light-harvesting applications.

scholarly journals Ultrafast mode-locking in highly stacked Ti3C2Tx MXenes for 1.9-μm infrared femtosecond pulsed lasers

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1741-1751
Author(s):  
Young In Jhon ◽  
Jinho Lee ◽  
Young Min Jhon ◽  
Ju Han Lee
Keyword(s):  
High Performance ◽  
Density Functional ◽  
2D Materials ◽  
Density Functional Theory Calculations ◽  
Mode Locking ◽  
Infrared Range ◽  
Saturable Absorption ◽  
Pulsed Lasers ◽  
Saturable Absorbers ◽  
Layer Stacking

Abstract Metallic 2D materials can be promising saturable absorbers for ultrashort pulsed laser production in the long wavelength regime. However, preparing and manipulating their 2D structures without layer stacking have been nontrivial. Using a combined experimental and theoretical approach, we demonstrate here that a metallic titanium carbide (Ti3C2Tx), the most popular MXene 2D material, can have excellent nonlinear saturable absorption properties even in a highly stacked state due to its intrinsically existing surface termination, and thus can produce mode-locked femtosecond pulsed lasers in the 1.9-μm infrared range. Density functional theory calculations reveal that the electronic and optical properties of Ti3C2Tx MXene can be well preserved against significant layer stacking. Indeed, it is experimentally shown that 1.914-μm femtosecond pulsed lasers with a duration of 897 fs are readily generated within a fiber cavity using hundreds-of-layer stacked Ti3C2Tx MXene saturable absorbers, not only being much easier to manufacture than mono- or few-layered ones, but also offering character-conserved tightly-assembled 2D materials for advanced performance. This work strongly suggests that as-obtained highly stacked Ti3C2Tx MXenes can serve as superb material platforms for versatile nanophotonic applications, paving the way toward cost-effective, high-performance photonic devices based on MXenes.

scholarly journals Gallium nitride catalyzed the direct hydrogenation of carbon dioxide to dimethyl ether as primary product

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Chang Liu ◽  
Jincan Kang ◽  
Zheng-Qing Huang ◽  
Yong-Hong Song ◽  
Yong-Shan Xiao ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Dimethyl Ether ◽  
High Performance ◽  
Density Functional ◽  
Value Added ◽  
Density Functional Theory Calculations ◽  
Product Distribution ◽  
Spectroscopic Studies ◽  
Direct Hydrogenation ◽  
Hydrogenation Of Co

AbstractThe selective hydrogenation of CO2 to value-added chemicals is attractive but still challenged by the high-performance catalyst. In this work, we report that gallium nitride (GaN) catalyzes the direct hydrogenation of CO2 to dimethyl ether (DME) with a CO-free selectivity of about 80%. The activity of GaN for the hydrogenation of CO2 is much higher than that for the hydrogenation of CO although the product distribution is very similar. The steady-state and transient experimental results, spectroscopic studies, and density functional theory calculations rigorously reveal that DME is produced as the primary product via the methyl and formate intermediates, which are formed over different planes of GaN with similar activation energies. This essentially differs from the traditional DME synthesis via the methanol intermediate over a hybrid catalyst. The present work offers a different catalyst capable of the direct hydrogenation of CO2 to DME and thus enriches the chemistry for CO2 transformations.

scholarly journals Mechanism of selective benzene hydroxylation catalyzed by iron-containing zeolites

2018 ◽  
Vol 115 (48) ◽  
pp. 12124-12129 ◽  
Author(s):  
Benjamin E. R. Snyder ◽  
Max L. Bols ◽  
Hannah M. Rhoda ◽  
Pieter Vanelderen ◽  
Lars H. Böttger ◽  
...  
Keyword(s):  
High Activity ◽  
Active Site ◽  
Active Sites ◽  
High Performance ◽  
Density Functional ◽  
Catalyst Deactivation ◽  
Density Functional Theory Calculations ◽  
Oxidation Catalysis ◽  
Spectroscopic Techniques ◽  
Benzene Hydroxylation

A direct, catalytic conversion of benzene to phenol would have wide-reaching economic impacts. Fe zeolites exhibit a remarkable combination of high activity and selectivity in this conversion, leading to their past implementation at the pilot plant level. There were, however, issues related to catalyst deactivation for this process. Mechanistic insight could resolve these issues, and also provide a blueprint for achieving high performance in selective oxidation catalysis. Recently, we demonstrated that the active site of selective hydrocarbon oxidation in Fe zeolites, named α-O, is an unusually reactive Fe(IV)=O species. Here, we apply advanced spectroscopic techniques to determine that the reaction of this Fe(IV)=O intermediate with benzene in fact regenerates the reduced Fe(II) active site, enabling catalytic turnover. At the same time, a small fraction of Fe(III)-phenolate poisoned active sites form, defining a mechanism for catalyst deactivation. Density-functional theory calculations provide further insight into the experimentally defined mechanism. The extreme reactivity of α-O significantly tunes down (eliminates) the rate-limiting barrier for aromatic hydroxylation, leading to a diffusion-limited reaction coordinate. This favors hydroxylation of the rapidly diffusing benzene substrate over the slowly diffusing (but more reactive) oxygenated product, thereby enhancing selectivity. This defines a mechanism to simultaneously attain high activity (conversion) and selectivity, enabling the efficient oxidative upgrading of inert hydrocarbon substrates.

scholarly journals Time-Resolved X-ray Operando Observations of Lithiation Gradients across the Cathode Matrix and Individual Oxide Particles during Fast Cycling of a Li-Ion Cell

2021 ◽  
Author(s):  
Tianlong Zheng ◽  
Jing He ◽  
Pingwei Cai ◽  
Xi Liu ◽  
Duojie Wu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Specific Surface ◽  
Surface Area ◽  
Specific Surface Area ◽  
High Performance ◽  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Carbon Paper ◽  
Free Energy Barrier ◽  
Active Components

Abstract Self-supporting three-dimensional (3D) transition metal electrodes have been considered for designing high-performance non-noble metal oxygen evolution reaction (OER) catalysts owing to their advantages such as binder-free, good mass transfer, and large specific surface area. However, the poor conductivity of ((oxy)hydr)oxides and the difficulty in adjusting their electronic structure limit their application. As an alternative strategy, instead of constituting the array electrode by the active components themselves, we herein report 3D Co(OH)2@MnO2 heterostructure decorated carbon nanoarrays grown directly on carbon paper (Co(OH)2@MnO2-CNAs). This unique structure can not only enhance electrical conductivity but also provide a larger specific surface area, and facilitate electrolyte diffusion and ion transport. The core-shell heterostructured Co(OH)2@MnO2 formed via incorporation with MnO2 facilitates the transition of CoII to CoIII in Co(OH)2 and it increases the storage of oxidative charge in the catalyst, leading to an OER activity with benchmark RuO2 and good stability. Density functional theory calculations suggest that the improved OER performance can be attributed to the formation of the heterojunction structure, resulting in the modulation of the electronic structure of Co atoms and the reduction of the free energy barrier of the rate-determining step for the OER.

scholarly journals Nitrogen-rich covalent organic frameworks with multiple carbonyls for high-performance sodium batteries

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Ruijuan Shi ◽  
Luojia Liu ◽  
Yong Lu ◽  
Chenchen Wang ◽  
Yixin Li ◽  
...  
Keyword(s):  
High Performance ◽  
Density Functional ◽  
Specific Capacity ◽  
Density Functional Theory Calculations ◽  
Rechargeable Batteries ◽  
High Rate ◽  
Ex Situ ◽  
Covalent Organic Frameworks ◽  
Rate Performance ◽  
Practical Applications

AbstractCovalent organic frameworks with designable periodic skeletons and ordered nanopores have attracted increasing attention as promising cathode materials for rechargeable batteries. However, the reported cathodes are plagued by limited capacity and unsatisfying rate performance. Here we report a honeycomb-like nitrogen-rich covalent organic framework with multiple carbonyls. The sodium storage ability of pyrazines and carbonyls and the up-to twelve sodium-ion redox chemistry mechanism for each repetitive unit have been demonstrated by in/ex-situ Fourier transform infrared spectra and density functional theory calculations. The insoluble electrode exhibits a remarkably high specific capacity of 452.0 mAh g−1, excellent cycling stability (~96% capacity retention after 1000 cycles) and high rate performance (134.3 mAh g−1 at 10.0 A g−1). Furthermore, a pouch-type battery is assembled, displaying the gravimetric and volumetric energy density of 101.1 Wh kg−1cell and 78.5 Wh L−1cell, respectively, indicating potentially practical applications of conjugated polymers in rechargeable batteries.

scholarly journals Tracking structural evolution: operando regenerative CeOx/Bi interface structure for high-performance CO2 electroreduction

2020 ◽  
Author(s):  
Ruichao Pang ◽  
Pengfei Tian ◽  
Hongliang Jiang ◽  
Minghui Zhu ◽  
Xiaozhi Su ◽  
...  
Keyword(s):  
High Performance ◽  
Density Functional ◽  
Structural Evolution ◽  
Density Functional Theory Calculations ◽  
Active Phase ◽  
Interface Structure ◽  
Operating Conditions ◽  
Faradaic Efficiency ◽  
Co2 Electroreduction ◽  
Water Activation

Abstract Unveiling the structural evolution and working mechanism of catalysts under realistic operating conditions is crucial for the design of efficient electrocatalysts for CO2 electroreduction, yet remains highly challenging. Here, by virtue of operando structural measurements at multiscale levels, it is identified under CO2 electroreduction conditions that an as-prepared CeO2/BiOCl precatalyst gradually evolves into CeOx/Bi interface structure with enriched Ce3+ species, which serves as the real catalytically active phase. The derived CeOx/Bi interface structure compared to pure Bi counterpart delivers substantially enhanced performance with a formate Faradaic efficiency approaching 90% for 24 hours in a wide potential window. The formate Faradaic efficiency can be further increased by using isotope D2O instead of H2O. Density functional theory calculations suggest that the regenerative CeOx/Bi interfacial sites can not only promote water activation to increase local *H species for CO2 protonation appropriately, but also stabilize the key intermediate *OCHO in formate pathway.

The Role of SiH3 Diffusion in Determining the Surface Smoothness of Plasma-Deposited Amorphous Si Thin Films: An Atomic-Scale Analysis

2005 ◽  
Vol 862 ◽  
Author(s):  
Mayur S. Valipa ◽  
Tamas Bakos ◽  
Eray S. Aydil ◽  
Dimitrios Maroudas
Keyword(s):  
Thin Films ◽  
Density Functional ◽  
Activation Barrier ◽  
Density Functional Theory Calculations ◽  
Atomic Scale ◽  
Functional Theory ◽  
Weak Adsorption ◽  
Dynamics Simulations ◽  
Hydrogenated Amorphous

AbstractDevice-quality hydrogenated amorphous silicon (a-Si:H) thin films grown under conditions where the SiH3 radical is the dominant deposition precursor are remarkably smooth, as the SiH3 radical is very mobile and fills surface valleys during its diffusion on the a-Si:H surface. In this paper, we analyze atomic-scale mechanisms of SiH3 diffusion on a-Si:H surfaces based on molecular-dynamics simulations of SiH3 radical impingement on surfaces of a-Si:H films. The computed average activation barrier for radical diffusion on a-Si:H is 0.16 eV. This low barrier is due to the weak adsorption of the radical onto the a-Si:H surface and its migration predominantly through overcoordination defects; this is consistent with our density functional theory calculations on crystalline Si surfaces. The diffusing SiH3 radical incorporates preferentially into valleys on the a-Si:H surface when it transfers an H atom and forms a Si-Si backbond, even in the absence of dangling bonds.

Ferroeleciric Thin Films Intended for Electronic Device Applications

1993 ◽  
Vol 310 ◽  
Author(s):  
A. Patel ◽  
E.A. Logan ◽  
R. Nicklin ◽  
N.B. Hasdell ◽  
R.W. Whatmore ◽  
...  
Keyword(s):  
Thin Films ◽  
Flip Chip ◽  
Electronic Device ◽  
Dielectric Material ◽  
Sol Gel ◽  
Deposition Process ◽  
Dielectric Constants ◽  
Excess Lead ◽  
Starting Solutions ◽  
High Dielectric

AbstractThe need for integrated ferroelectrics as charge storage capacitors has increased dramatically not only for use in radiation hardened and commercial non-volatile memories, but also as possible high dielectric material suitable for capacitor applications. These properties combined with a thin film format, offer the capability of forming very compact capacitor structures suitable for MCM applications through Flip-Chip Bonding, or even integrated directly onto MMIC's. In this paper, the material PbZrxTi1-xO3, where x=l, 0.53, and 0.60 has been assessed. Thin films were produced using a sol-gel technique onto metallised thermally oxidised silicon. The effects on film microstructure and crystallinity with variation in the deposition process will be described. The best films were obtained by incorporating excess lead in the starting solutions, and also by the addition of acetylacetone which was used as a solution modifier. It will be demonstrated that fully perovskite films can be readily obtained at temperatures as low as 450°C. The films were normally 0.3-0.44μm thick with grain sizes of the order of 0.2μm. These films exhibited dielectric constants and loss in the range 170-800 and 1-3% respectively. Measurements upto 3MHz, indicated useful performance with low dispersion. The measured Pr and Ec were in the range 16-22μC/cm2, and 60-120kV/cm respectively.

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