<p>A new biosensor detection system to overcome the Debye screening effect: dialysis-silicon nanowire field effect transistor</p>

AbstractSilicon nanowire field effect transistor (SiNW-FET) biosensors are capable of label-free, real-time and biological detection with high sensitivity and specificity. However, direct observation on protein-protein interaction in blood or serum is still very difficult because of the complex physiological environment and Debye-screening effect. In order to overcome the detection obstacles, we used dialysis desalination method to purify the detection fluid and overcome Debye-screening effect. In our research, a top-down approach was proposed to fabricate the SiNW-FET, APTES-Glu chemical chain was used to link antibody to the SiNWs. And after verified the detection ability of silicon nanometer biosensors, the dynamic detection process of HbA1c was successfully realized. This could be helpful for accurate diagnosis of diabetes for clinical application. And it makes it possible to dynamic research of small biomolecules without markers.

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Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽

10.3390/s21124213 ◽

2021 ◽

Vol 21 (12) ◽

pp. 4213

Author(s):

Seong-Kun Cho ◽

Won-Ju Cho

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Silicon On Insulator ◽

Sodium Ion ◽

Ion Sensor ◽

Highly Sensitive ◽

Selective Membrane ◽

Dual Gate ◽

Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

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Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate

ACS Sensors ◽

10.1021/acssensors.8b01394 ◽

2019 ◽

Vol 4 (2) ◽

pp. 427-433 ◽

Cited By ~ 3

Author(s):

Xi Chen ◽

Si Chen ◽

Qitao Hu ◽

Shi-Li Zhang ◽

Paul Solomon ◽

...

Keyword(s):

Noise Reduction ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Schottky Junction ◽

Effect Transistor ◽

Device Noise

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Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

MRS Proceedings ◽

10.1557/proc-1144-ll06-02 ◽

2008 ◽

Vol 1144 ◽

Author(s):

Pranav Garg ◽

Yi Hong ◽

Md. Mash-Hud Iqbal ◽

Stephen J. Fonash

Keyword(s):

Metal Oxide ◽

Silicon Nanowires ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Manufacturing Cost ◽

Effect Transistor ◽

The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

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