scholarly journals Effect of oxygen flow rate on structural, electrical and optical properties of zinc aluminum oxide thin films deposited by DC magnetron sputtering -=SUP=-*-=/SUP=-

2019 ◽  
Vol 53 (4) ◽  
pp. 583
Author(s):  
B. Rajesh Kumar ◽  
B. Hymavathi
Keyword(s):  
Thin Films ◽  
Aluminum Oxide ◽  
Nonlinear Optical ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Dc Magnetron Sputtering ◽  
Oxide Thin Films ◽  
Flow Rates ◽  
X Ray ◽  
Optical Susceptibility

AbstractZinc Aluminum Oxide thin films were deposited on glass substrates by reactive DC magnetron sputtering method by varying oxygen flow rates from 1 to 4 sccm. Glancing angle X-ray diffraction patterns ofzinc aluminum oxide thin films exhibits (0 0 2) peak with c-plane preferentially oriented parallel to the substrate. The surface morphology and elemental analysis of the films was observed by field emission scanning electron microscopy attached with energy dispersive X-ray analysis spectroscopy. An average optical transmittance of 83–90% is obtained for the films deposited at various oxygen flow rates. The optical band gap of the films increases from 3.41 to 3.53 eV with the increase of oxygen flow rate due to Burstein–Moss effect. The optical dispersion parameters such as dispersion energy ( E _ d ), oscillator energy ( E _ o ) and static refractive index ( n _ o ) were determined using the Wemple-DiDomenico (W-D) single oscillator model. The nonlinear optical parameters such as optical susceptibility (χ^(1)), third order nonlinear optical susceptibility (χ^(3)) and nonlinear refractive index ( n _2) were also determined.

Effect of Oxygen Flow Rate on the Characteristics of RF Sputtered ZnO Thin Films

2021 ◽  
Vol 903 ◽  
pp. 91-97
Author(s):  
Pathan Parhana ◽  
M.V. Lakshmaiah
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Flow Rates ◽  
X Ray ◽  
Effect Of Oxygen

Zinc Oxide (ZnO) thin films were deposited on glass substrate by radio frequency (RF)reactive magnetron sputtering technique at variable Oxygen flow rates while Argon flow rates waskept constant. The effect of oxygen flow rate on structural, electrical, optical properties of nanostructured ZnO thin films were investigated by X-ray diffractometer, scanning eletron microscopy(SEM), Hall effect measurements and UV-Visible spectrophotometer. X-ray diffraction (XRD) datareveals films are polycrystalline hexagonal structure with (002) peak as a preferred orientation andcrystallite size was found to be in range12 nm-16 nm.The electrical resistivity of films decreasesfrom 10-1 Ω-cm to 10-2 Ω-cm. All deposited ZnO thin films shows high transmittance above 95% inthe visible range 360 nm-800 nm. The optical band gap and refractive indices have been calculatedusing UV-Vis transmission spectra. Oxygen gas flow rates found to have large impact onoptoelectronic properties of ZnO films.

scholarly journals Growth, Structural and Optical Properties of DC Reactive Magnetron Sputtered TixSi1-xO2 Thin Films

2015 ◽  
Vol 57 ◽  
pp. 182-190
Author(s):  
Suresh Addepalli ◽  
Uthanna Suda
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Binding Energies ◽  
Core Level ◽  
Oxygen Flow ◽  
Reactive Magnetron ◽  
Flow Rates ◽  
X Ray ◽  
Deposited Films

Thin films of TixSi1-xO2 were deposited on silicon and quartz substrates by DC reactive magnetron sputtering of Ti80Si20 composite target at different oxygen flow rates. The deposited films were characterized for their chemical composition and core level binding energies using X-ray photoelectron spectroscope, surface morphology with scanning electron microscope, optical absorption with spectrophotometer and refractive index by ellipsometer. The thickness of the deposited films was 100 nm. The oxygen content in the films increased with increase of oxygen flow rate. Films with Ti0.7Si0.3O2 were achieved at oxygen flow rates ≥ 8 sccm. X-ray diffraction studies indicated the grown of amorphous films. X-ray photoelectron spectra of the films showed the characteristic core level binding energies of TixSi1-xO2. Optical band gap of the films decreased from 4.15 to 4.07 eV with increase of oxygen flow rate from 2 sccm to 10 sccm respectively.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

Effects of Oxygen Flow Rate on Nanostructured ZnO Thin Films

2013 ◽  
Vol 667 ◽  
pp. 333-337
Author(s):  
S. Ahmad ◽  
N.D. Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Volume Ratio ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Zno Thin Films ◽  
Average Thickness ◽  
X Ray

Zinc Oxide (ZnO) thin films were deposited on thermally oxidized SiO2 by varying the oxygen flow rate. The deposition process were done using radio frequency (RF) magnetron sputtering at various oxygen flow rate ranging from 0 to 40 sccm. The surface morphology and crystallinity were analyzed by field emission scanning electron microscopy (FESEM) and X-Ray Diffractometer (XRD) respectively. The average thickness and deposition rate decreases with an increase of oxygen content. The grain size was measured by FESEM and it was found that it is also decreasing with the increased of oxygen flow rate. The films grown with 10 sccm oxygen shows the highest (002) peak however it is expected that the sample deposited with 40 sccm oxygen exhibit the highest sensitivity toward NH3 gas due to the highest surface to volume ratio.

Effect of Oxygen Flow Rate on the Properties of Nanocolumnar ZnO Thin Films Prepared Using Radio Frequency Magnetron Sputtering System for Ultraviolet Sensor Applications

2011 ◽  
Vol 364 ◽  
pp. 1-6 ◽  
Author(s):  
Mohamad Hafiz Mamat ◽  
Syafinaz Wan Anwar Wan ◽  
Mohamed Zahidi Musa ◽  
Zuraida Khusaimi ◽  
Mohd Firdaus Malek ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Flow Rates ◽  
Sensor Applications ◽  
Ultraviolet Sensor ◽  
Sputtering System

Nanostructured zinc oxide (ZnO) thin films were deposited on glass substrates using radio frequency (RF) magnetron sputtering system at different oxygen flow rates ranges between 0 to 40 sccm. Field emission scanning electron microscopy (FESEM) images was revealed that nanocolumnar ZnO structure thin films are produced on the substrates using high purity ZnO as the target at RF power of 250 W in the argon and oxygen gas mixture ambient. The XRD spectra reveal that the deposited films are preferentially grown along the c-axis indicating high ZnO crystallinity. The ultraviolet-visible (UV-Vis) spectra show that all samples are very transparent in the visible region (400 – 800 nm) with average transparency above 80 %. The photocurrent properties indicate that ZnO thin film prepared at oxygen flow rate of 20 sccm has the optimum characteristic for ultraviolet sensor applications. This finding suggested that the oxygen flow rates play important role and has critical value for semiconducting nanocolumnar ZnO growth in the sputtering system, which can produce ZnO thin film with high sensitivity of ultraviolet detection.

scholarly journals Properties of Indium Tin Oxide Thin Films According to Oxygen Flow Rates by γ-FIB System

2012 ◽  
Vol 21 (6) ◽  
pp. 333-341 ◽  
Author(s):  
D.H. Kim ◽  
C.H. Son ◽  
M.S. Yun ◽  
K.A. Lee ◽  
T.H. Jo ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxygen Flow ◽  
Oxide Thin Films ◽  
Flow Rates

Effect of Oxygen Flow Rate on Surface Morphology and Optical Properties of Reactive DC Magnetron Sputtered TiO2 Thin Films

2021 ◽  
Vol 903 ◽  
pp. 51-56
Author(s):  
Lavanya Mekala ◽  
Sunita Ratnam Srirangam ◽  
Rajesh Kumar Borra ◽  
Subba Rao Thota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Effect Of Oxygen

In the present work, reactive DC magnetron sputtering method is used to deposit TiO2 thin films on glass substrates. The structural, surface morphology and optical studies of TiO2 thin films were discussed by varying the oxygen flow rates from 1 to 4 sccm. X-ray diffraction patterns of TiO2 thin films show amorphous nature. The surface morphological and elemental composition of TiO2 thin films were examined by field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. From the optical absorption spectra, the shifting of absorption edge towards the longer wavelength leads to the decrement of optical bandgap from 3.48 to 3.19 eV with an increase of oxygen flow rate from 1 to 4 sccm.

Third order nonlinear optical susceptibility for transparent tin oxide thin films

1992 ◽  
Vol 131 (1) ◽  
pp. 111-117 ◽  
Author(s):  
Yuichi Watanabe ◽  
Mitsuhiro Sakai ◽  
Masauke Takata ◽  
Naoyuki Ueda ◽  
Hiroshi Kawazoe
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Nonlinear Optical ◽  
Oxide Thin Films ◽  
Third Order ◽  
Nonlinear Optical Susceptibility ◽  
Optical Susceptibility

Homogenous Thin Films Prepared on Microchannel Plates via Atomic Layer Deposition

2015 ◽  
Vol 1096 ◽  
pp. 93-97
Author(s):  
Bao Jun Yan ◽  
Shu Lin Liu ◽  
Lu Ping Yang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Good Method ◽  
Element Distribution ◽  
Oxide Thin Films ◽  
X Ray ◽  
Precise Control ◽  
Layer Deposition

Oxide thin films such as aluminum oxide doped with zinc (AZO), and aluminum oxide (Al2O3) were prepared in the pores of microchannel plate (MCP) by atomic layer deposition (ALD), which is a precise control thin film thickness on substrate with high aspect ratio structure. In this paper, homogenous oxide thin films deposited on varied substrates were prepared by ALD technology under different conditions, and the morphology, element distribution and structure of deposited samples are systematically investigated by scanning electron microscopy (SEM), energy dispersive x-ray (EDX), and x-ray diffraction (XRD) respectively, The results show that ALD technique is a good method to grow homogenous thin films on MCP.

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