Моделирование пространственной динамики включения лазера-тиристора (&lambda;=905 нм) на основе многопереходной гетероструктуры AlGaAs/InGaAs/GaAs

Abstract A 2D carrier transport model to be used in studying the spatial current dynamics in laser thyristors is presented. The model takes into account such features as optical feedback, impact ionization, and drift velocity saturation in strong electric fields. It is shown that there is current localization during laser-thyristor switch-on. A relationship is demonstrated between the distribution nonuniformity of the control current and its amplitude and position of the initial switch-on region. The time of laser-thyristor switch-on is 13 ns at a feed voltage of 26V, with a time of switch-on spreading over the entire 200-μm stripe width of ~65 ns. These parameters remain invariable irrespective of the switch-on spatial dynamics.

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Comparison of drift–diffusion model and hydrodynamic carrier transport model for simulation of GaN-based IMPATT diodes

Modern Physics Letters B ◽

10.1142/s0217984919501562 ◽

2019 ◽

Vol 33 (13) ◽

pp. 1950156 ◽

Cited By ~ 1

Author(s):

Xiusheng Li ◽

Lin’an Yang ◽

Xiaohua Ma

Keyword(s):

Electric Field ◽

Diffusion Model ◽

Carrier Transport ◽

Impact Ionization ◽

Transport Model ◽

Relaxation Effect ◽

Drift Diffusion Model ◽

Drift Diffusion ◽

Impatt Diode ◽

The Impact

This paper presents a numerical simulation of a Wurtzite-GaN-based IMPATT diode operating at the low-end frequency of terahertz range. Conventional classical drift–diffusion model is independent of the energy relaxation effect at high electric field. However, in this paper, a hydrodynamic carrier transport model including a new energy-based impact ionization model is used to investigate the dc and high-frequency characteristics of an IMPATT diode with a traditional drift–diffusion model as comparison. Simulation results show that the maximum rf power density and the dc-to-rf conversion efficiency are larger for conventional drift–diffusion model because it overestimates the impact ionization rate. Through hydrodynamic simulation we revealed that the impact ionization rates are seriously affected by the high and rapidly varied electric field and the electron energy relaxation effect, which lead to the rf output power density and the dc-to-rf conversion efficiency falls gradually, and a wider operation frequency band is obtained compared with the drift–diffusion model simulation at frequencies over 310 GHz.

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HOT CARRIER EFFECTS WITHIN MACROSCOPIC TRANSPORT MODELS

International Journal of High Speed Electronics and Systems ◽

10.1142/s012915640300206x ◽

2003 ◽

Vol 13 (03) ◽

pp. 873-901 ◽

Cited By ~ 7

Author(s):

TIBOR GRASSER ◽

HANS KOSINA ◽

SIEGFRIED SELBERHERR

Keyword(s):

Distribution Function ◽

Carrier Transport ◽

Energy Transport ◽

Impact Ionization ◽

Transport Model ◽

Hot Electron ◽

Transport Models ◽

Relaxation Time Approximation ◽

Carrier Energy ◽

Hot Carrier Effects

The distribution function of hot carriers in state-of-the-art devices is insufficiently described using just the electric field or the average carrier energy as parameters. Still, the standard models to describe carrier transport in semiconductor devices, namely the drift-diffusion model and the energy-transport model rely on these assumptions. In this article we summarize our work on six moments transport models which allow an accurate characterization of the distribution function. Within this framework it is possible to selfconsistently model the scattering integral without resorting to the relaxation time approximation. In addition, hot electron processes such as impact ionization, which are difficult to model in lower order transport models, can be described accurately.

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Dendritic Growth Failure of a Mesa Diode

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0179 ◽

1997 ◽

Author(s):

P. Singh ◽

V. Cozzolino ◽

G. Galyon ◽

R. Logan ◽

K. Troccia ◽

...

Keyword(s):

Electric Fields ◽

Dendritic Growth ◽

Silicon Oxide ◽

Impact Ionization ◽

Electron Tunneling ◽

Growth Failure ◽

Side Wall ◽

Oxide Interface ◽

Band Bending ◽

Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

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Hot Carrier Effects in Deep Submicron Nmosfets

MRS Proceedings ◽

10.1557/proc-428-385 ◽

1996 ◽

Vol 428 ◽

Author(s):

Abhijit Phanse ◽

Samar Saha

Keyword(s):

Electric Fields ◽

Channel Length ◽

Deep Submicron ◽

Short Channel ◽

Hot Carrier ◽

Velocity Saturation ◽

Substrate Current ◽

Hot Carrier Effects ◽

Saturation Effects ◽

Channel Lengths

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.

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Space Charge Simulation of Electric Tree Before Germination in XLPE at DC Voltage Based on Improved Bipolar Carrier Transport Model

10.1109/eic49891.2021.9612296 ◽

2021 ◽

Author(s):

Shiyou Wu ◽

Shusheng Zheng ◽

Aixu Zhong ◽

Zongheng Zhang ◽

Renjie Cao ◽

...

Keyword(s):

Space Charge ◽

Carrier Transport ◽

Transport Model ◽

Dc Voltage

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Absence of Rapid Exchange Component in a Low-Affinity Carrier Transport

The Journal of General Physiology ◽

10.1085/jgp.46.4.721 ◽

1963 ◽

Vol 46 (4) ◽

pp. 721-731 ◽

Cited By ~ 11

Author(s):

Paul G. LeFevre ◽

Keyword(s):

Carrier Transport ◽

Transport Model ◽

Exchange Process ◽

Tracer Uptake ◽

Transport Systems ◽

Human Red Blood Cells ◽

Rapid Exchange ◽

Carrier Mediated Transport ◽

Net Uptake ◽

High Concentrations

A previous study showed that human red blood cells equilibrate much less rapidly with D-glucose at moderately high concentrations than with C14-glucose added after the net movement is completed. This had been predicted from a simple reversible mobile-carrier mediated-transport model system suggested by the net monosaccharide transport kinetics in these cells, but is also consistent with the more complex models proposed for certain active transport systems to account for elevation of tracer fluxes of even low-affinity "substrates" when their trans-concentration is raised. The simple model predicts, however, that with any sugar showing a much lower apparent affinity for the reactive sites, such as D-ribose, this phenomenon would not be observed, and tracer equilibration should proceed at approximately the same rate as net uptake. The latter expectation was confirmed experimentally by analyses of the ribose, or radioactivity, content of washed red cells sampled serially during incubation with ribose or C14-ribose in the appropriate mixtures. The tracer ribose movement showed no evidence of a relatively rapid exchange component. The relative rapidity of glucose tracer uptake into cells preloaded with ordinary glucose may therefore more readily be attributed simply to depression of tracer efflux by competition for the saturated reactive sites, than to any action of the trans-concentration on the influx by way of a coupled exchange process.

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