scholarly journals Полупроводниковый сенсор термоэлектрического однофотонного детектора для регистрации излучения ближнего ИК диапазона

2021 ◽  
Vol 55 (4) ◽  
pp. 336
Author(s):  
А.А. Кузанян
Keyword(s):  
Count Rate ◽  
Near Infrared ◽  
Detection Efficiency ◽  
Single Photon ◽  
Three Dimensional ◽  
Signal Amplitude ◽  
Heat Propagation ◽  
Signal Delay ◽  
Signal Value ◽  
Maximum Signal

We proposed the design of a four-layer detection pixel of the single-photon thermoelectric detector with semiconductor FeSb2 sensor. The processes of heat propagation in a detection pixel after the absorption of a photon were studied using computer simulation. The calculations were based on the equation of heat propagation from a limited volume using the three-dimensional matrix method for differential equations. The temporal dependences of the detector signal amplitude were calculated for various thicknesses of the detection pixel’s layers and the following parameters were determined: signal delay, timing jitter, maximum signal value, time to reach the maximum signal, decay time and count rate. It was proved that a detector with such a detection pixel can provide detection efficiency above 95% for near-infrared photons. At the same time, the terahertz count rate was achieved.

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology

2019 ◽  
Vol 33 (09) ◽  
pp. 1950099
Author(s):  
Wei Wang ◽  
Guang Wang ◽  
Hongan Zeng ◽  
Yuanyao Zhao ◽  
U-Fat Chio ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Cmos Technology ◽  
Uniform Electric Field ◽  
Avalanche Breakdown ◽  
Guard Ring ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.

Detection efficiency of large-active-area NbN single-photon superconducting detectors in the ultraviolet to near-infrared range

2002 ◽  
Vol 80 (25) ◽  
pp. 4687-4689 ◽  
Author(s):  
A. Verevkin ◽  
J. Zhang ◽  
Roman Sobolewski ◽  
A. Lipatov ◽  
O. Okunev ◽  
...  
Keyword(s):  
Near Infrared ◽  
Detection Efficiency ◽  
Single Photon ◽  
Active Area ◽  
Infrared Range ◽  
Superconducting Detectors ◽  
Large Active Area ◽  
Near Infrared Range

scholarly journals Constraint-free wavelength conversion supported by giant optical refraction in a 3D perovskite supercrystal

2020 ◽  
Vol 1 (1) ◽  
Author(s):  
Ludovica Falsi ◽  
Luca Tartara ◽  
Fabrizio Di Mei ◽  
Mariano Flammini ◽  
Jacopo Parravicini ◽  
...  
Keyword(s):  
Near Infrared ◽  
Wavelength Conversion ◽  
Single Photon ◽  
Second Harmonic ◽  
Three Dimensional ◽  
Index Of Refraction ◽  
Optical Refraction ◽  
Quasi Phase Matching ◽  
Wave Vector Mismatch ◽  
Focused Beams

Abstract Nonlinear response in a material increases with its index of refraction as n4. Commonly, n ~ 1 so that diffraction, dispersion, and chromatic walk-off limit nonlinear scattering. Ferroelectric crystals with a periodic 3D polarization structure overcome some of these constraints through versatile Cherenkov and quasi-phase-matching mechanisms. Three-dimensional self-structuring can also lead to a giant optical refraction. Here, we perform second-harmonic-generation experiments in KTN:Li in conditions of giant broadband refraction. Enhanced response causes wavelength conversion to occur in the form of bulk Cherenkov radiation without diffraction and chromatic walk-off, even in the presence of strong wave-vector mismatch and highly focused beams. The process occurs with a wide spectral acceptance of more than 100 nm in the near infrared spectrum, an ultra-wide angular acceptance of up to ±40∘, with no polarization selectivity, and can be tuned to allow bulk supercontinuum generation. Results pave the way to highly efficient and adaptable nonlinear optical devices with the promise of single-photon-to-single-photon nonlinear optics.

scholarly journals Silicon Photomultipliers: Technology Optimizations for Ultraviolet, Visible and Near-Infrared Range

Instruments ◽  
2019 ◽  
Vol 3 (1) ◽  
pp. 15 ◽  
Author(s):  
Fabio Acerbi ◽  
Giovanni Paternoster ◽  
Massimo Capasso ◽  
Marco Marcante ◽  
Alberto Mazzi ◽  
...  
Keyword(s):  
Near Infrared ◽  
Detection Efficiency ◽  
Single Photon ◽  
High Energy ◽  
Infrared Light ◽  
Infrared Range ◽  
Silicon Photomultipliers ◽  
Deep Trench ◽  
Near Ultraviolet ◽  
Physics Experiments

Silicon photomultipliers (SiPMs) are single-photon sensitive solid-state detectors that are becoming popular for several applications, thanks to massive performance improvements over the last years. Starting as a replacement for the photomultiplier tube (PMT), they are now used in medical applications, big high-energy physics experiments, nuclear physics experiments, spectroscopy, biology and light detection and ranging (LIDAR) applications. Due to different requirements in terms of detection efficiency, noise, etc., several optimizations have been introduced by the manufacturers; for example, spectral sensitivity has been optimized for visible light, near ultraviolet, vacuum ultraviolet, and near infrared light. Each one of them require specific processes and structural optimization. We present in this paper recent improvements in SiPM performance, owing to a higher cell fill-factor, lower noise, improved silicon materials, and deep trench isolation. We describe issues related to the characterization of analog SiPM, particularly due to the different sources of correlated noise, which have to be distinguished from each other and from the primary pulses. We also describe particular analyses and optimizations conducted for specific applications like the readout of liquid noble gas scintillators, requiring these detectors to operate at cryogenic temperatures.

scholarly journals An Accurate Circuit Model for the Statistical Behavior of InP/InGaAs SPAD

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2059
Author(s):  
Sheng Xie ◽  
Junting Liu ◽  
Fan Zhang
Keyword(s):  
Near Infrared ◽  
Detection Efficiency ◽  
Single Photon ◽  
Low Cost ◽  
High Sensitivity ◽  
Dark Count ◽  
Thermal Generation ◽  
Circuit Simulator ◽  
Statistical Behavior ◽  
Generation Mechanisms

In the field of near-infrared weak light detection, an InP/InGaAs single-photon avalanche diode (SPAD) is preferred due to the advantages of high sensitivity, low cost and room-temperature operation. To properly simulate and optimize the SPAD’s front-end circuit, a comprehensive and compact behavior model of the InP/InGaAs SPAD is normally required to accurately describe the statistical behavior of the detectors. In this paper, an InP/InGaAs SPAD analytical model is constructed, which not only includes the direct current (DC) and alternating current (AC) behavior simulating the avalanche and quenching processes, but also describes the dark count, after-pulsing and photon detection efficiency. For dark count noise, three important generation mechanisms are considered, including thermal generation, trap-assisted tunneling and band-to-band tunneling. The model described by the Verilog-A hardware description language (HDL) can be directly implemented in the commercial circuit simulator. A gated mode, passive quenching and recharging circuit is used to simulate and verify the developed model. The simulation results are in good agreement with the reported test data, demonstrating the accuracy of the developed InP/InGaAs SPAD model.

scholarly journals Высокоэффективный термоэлектрический однофотонный детектор на основе гексаборидов лантана и церия

2019 ◽  
Vol 53 (5) ◽  
pp. 689
Author(s):  
А.С. Кузанян ◽  
А.А. Кузанян ◽  
В.Н. Гурин ◽  
М.П. Волков ◽  
В.Р. Никогосян
Keyword(s):  
Sensitive Element ◽  
Near Infrared ◽  
High Efficiency ◽  
Detection Efficiency ◽  
Single Photon ◽  
Lanthanum Hexaboride ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Photon Detection ◽  
Spectral Ranges

AbstractA design for a high-efficiency single-photon detector based on lanthanum and cerium hexaborides, which operates from the infrared to ultraviolet spectral ranges, is suggested. The results of computer simulations of heat transfer in the sensitive element of the detector upon the absorption of photons with energies of 0.5–4.13 eV are presented. To attain a high efficiency of the system of photon detection in the wavelength range from near infrared to ultraviolet, lanthanum hexaboride is proposed as the absorber and heat-sink material in the sensitive element. It is shown that a sensitive element of both single- and three-layer design made entirely of hexaborides will possess a gigahertz counting rate and a detection efficiency exceeding 90%.

scholarly journals InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

2016 ◽  
Vol 3 (3) ◽  
pp. 150584 ◽  
Author(s):  
Xiao Meng ◽  
Shiyu Xie ◽  
Xinxin Zhou ◽  
Niccolò Calandri ◽  
Mirko Sanzaro ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Timing Jitter ◽  
Single Photon Detection ◽  
Dark Count ◽  
Absorption Region ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K −1 . Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 10 8  Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.

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