scholarly journals An Accurate Circuit Model for the Statistical Behavior of InP/InGaAs SPAD

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2059
Author(s):  
Sheng Xie ◽  
Junting Liu ◽  
Fan Zhang
Keyword(s):  
Near Infrared ◽  
Detection Efficiency ◽  
Single Photon ◽  
Low Cost ◽  
High Sensitivity ◽  
Dark Count ◽  
Thermal Generation ◽  
Circuit Simulator ◽  
Statistical Behavior ◽  
Generation Mechanisms

In the field of near-infrared weak light detection, an InP/InGaAs single-photon avalanche diode (SPAD) is preferred due to the advantages of high sensitivity, low cost and room-temperature operation. To properly simulate and optimize the SPAD’s front-end circuit, a comprehensive and compact behavior model of the InP/InGaAs SPAD is normally required to accurately describe the statistical behavior of the detectors. In this paper, an InP/InGaAs SPAD analytical model is constructed, which not only includes the direct current (DC) and alternating current (AC) behavior simulating the avalanche and quenching processes, but also describes the dark count, after-pulsing and photon detection efficiency. For dark count noise, three important generation mechanisms are considered, including thermal generation, trap-assisted tunneling and band-to-band tunneling. The model described by the Verilog-A hardware description language (HDL) can be directly implemented in the commercial circuit simulator. A gated mode, passive quenching and recharging circuit is used to simulate and verify the developed model. The simulation results are in good agreement with the reported test data, demonstrating the accuracy of the developed InP/InGaAs SPAD model.

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology

2019 ◽  
Vol 33 (09) ◽  
pp. 1950099
Author(s):  
Wei Wang ◽  
Guang Wang ◽  
Hongan Zeng ◽  
Yuanyao Zhao ◽  
U-Fat Chio ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Cmos Technology ◽  
Uniform Electric Field ◽  
Avalanche Breakdown ◽  
Guard Ring ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.

scholarly journals A novel device for non-invasive cerebral perfusion assessment

2015 ◽  
Vol 4 (1) ◽  
Author(s):  
Mirko Tessari ◽  
Anna Maria Malagoni ◽  
Maria Elena Vannini ◽  
Paolo Zamboni
Keyword(s):  
Near Infrared ◽  
Single Photon ◽  
Human Subjects ◽  
Low Cost ◽  
Photon Emission ◽  
Diagnostic Technique ◽  
Brain Perfusion ◽  
Emission Computed Tomography ◽  
Wide Field ◽  
Non Invasive

Currently brain perfusion can be assessed by the means of radio-invasive methods, such as single-photon emission computed tomography and positron emission tomography, or by hightech methods such as magnetic resonance imaging. These methods are known to be very expensive, with long examination time, and finally, cannot be used for assessing brain oxygen distribution in relation to exercise and/or cognition-tests. The near infrared spectroscopy (NIRS) is a non-invasive diagnostic technique. In real time it is capable of measuring tissue oxygenation using portable instrumentation with a relative low cost. We and other groups previously adopted this instrument for investigation of the oxygen consumption in the muscles at rest and during exercise. NIRS can be now used to assess brain perfusion through the intact skull in human subjects by detecting changes in blood hemoglobin concentrations. Changes in perfusion can be related to both arterial and venous problems. This novel equipment features allow for a wide field of innovative applications where portability, wearability, and a small footprint are essential. The present review shows how to use it in relation to exercise protocols of the upper and lower extremities, measured in healthy people and in conditions of arterial and chronic cerebro-spinal venous insufficiency.

scholarly journals Josephson junction infrared single-photon detector

Science ◽  
2021 ◽  
Vol 372 (6540) ◽  
pp. 409-412
Author(s):  
Evan D. Walsh ◽  
Woochan Jung ◽  
Gil-Ho Lee ◽  
Dmitri K. Efetov ◽  
Bae-Ian Wu ◽  
...  
Keyword(s):  
Josephson Junction ◽  
High Speed ◽  
High Performance ◽  
Near Infrared ◽  
Single Photon ◽  
Critical Role ◽  
Superconducting Devices ◽  
High Sensitivity ◽  
Single Photon Detector ◽  
Detection Mechanism

Josephson junctions are superconducting devices used as high-sensitivity magnetometers and voltage amplifiers as well as the basis of high-performance cryogenic computers and superconducting quantum computers. Although device performance can be degraded by the generation of quasiparticles formed from broken Cooper pairs, this phenomenon also opens opportunities to sensitively detect electromagnetic radiation. We demonstrate single near-infrared photon detection by coupling photons to the localized surface plasmons of a graphene-based Josephson junction. Using the photon-induced switching statistics of the current-biased device, we reveal the critical role of quasiparticles generated by the absorbed photon in the detection mechanism. The photon sensitivity will enable a high-speed, low-power optical interconnect for future superconducting computing architectures.

scholarly journals Полупроводниковый сенсор термоэлектрического однофотонного детектора для регистрации излучения ближнего ИК диапазона

2021 ◽  
Vol 55 (4) ◽  
pp. 336
Author(s):  
А.А. Кузанян
Keyword(s):  
Count Rate ◽  
Near Infrared ◽  
Detection Efficiency ◽  
Single Photon ◽  
Three Dimensional ◽  
Signal Amplitude ◽  
Heat Propagation ◽  
Signal Delay ◽  
Signal Value ◽  
Maximum Signal

We proposed the design of a four-layer detection pixel of the single-photon thermoelectric detector with semiconductor FeSb2 sensor. The processes of heat propagation in a detection pixel after the absorption of a photon were studied using computer simulation. The calculations were based on the equation of heat propagation from a limited volume using the three-dimensional matrix method for differential equations. The temporal dependences of the detector signal amplitude were calculated for various thicknesses of the detection pixel’s layers and the following parameters were determined: signal delay, timing jitter, maximum signal value, time to reach the maximum signal, decay time and count rate. It was proved that a detector with such a detection pixel can provide detection efficiency above 95% for near-infrared photons. At the same time, the terahertz count rate was achieved.

Detection efficiency of large-active-area NbN single-photon superconducting detectors in the ultraviolet to near-infrared range

2002 ◽  
Vol 80 (25) ◽  
pp. 4687-4689 ◽  
Author(s):  
A. Verevkin ◽  
J. Zhang ◽  
Roman Sobolewski ◽  
A. Lipatov ◽  
O. Okunev ◽  
...  
Keyword(s):  
Near Infrared ◽  
Detection Efficiency ◽  
Single Photon ◽  
Active Area ◽  
Infrared Range ◽  
Superconducting Detectors ◽  
Large Active Area ◽  
Near Infrared Range

SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES

2009 ◽  
Vol 19 (01) ◽  
pp. 85-92
Author(s):  
ALEXEY VERT ◽  
STANSILAV SOLOVIEV ◽  
JODY FRONHEISER ◽  
PETER SANDVIK
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Optical Filter ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Linear Mode ◽  
Solar Blind ◽  
Geiger Mode ◽  
Photon Detection Efficiency

A solar blind 4 H - SiC single photon avalanche diode (SPAD) is reported. The SPAD with separate absorption and multiplication layers was designed for operation with low dark counts. A thin film optical filter deposited on a sapphire window of the device package provided sensitivity in the wavelength range between 240 and 280 nm with a very high solar photon rejection ratio. An estimated dark current of 0.4 pA (0.75 nA/cm2) at a gain of 1000 was measured on a device with an effective mesa diameter of 260 µm. A single photon detection efficiency of 9% (linear mode) and 9.5% (gated Geiger mode) were achieved at a wavelength of 266 nm for the same device. Corresponding dark count rate and dark count probability were 600 Hz and 4×10-4.

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