scholarly journals A Study on the Estimation Method of Internal Stresses Caused by the Difference of Thermal Expansion Coefficients between Concrete and Reinforcement at Elevated Temperatures.

1998 ◽  
pp. 113-125
Author(s):  
Tsutomu Kanazu
1984 ◽  
Vol 17 (5) ◽  
pp. 359-360
Author(s):  
S. K. Shadangi ◽  
U. K. Shadangi ◽  
S. C. Panda

The Debye–Scherrer pattern of the alloy Ni80Zr20 clearly shows the presence of a nickel solid-solution phase along with a new intermetallic phase Ni23Zr6, which seems to be isostructural with the Co23Zr6 phase. The thermal expansion coefficient of the Ni23Zr6 phase has been investigated in the temperature range 1003–1493 K. Linear variation of lattice parameter with temperature has been observed. The thermal expansion coefficient remains almost constant throughout this temperature interval.


2004 ◽  
Vol 467-470 ◽  
pp. 801-806 ◽  
Author(s):  
Vera G. Sursaeva

When a bicrystal or polycrystal are subjected to a change in temperature, the individual responses of the two adjoining crystals may differ in a manner, which tends to produce a dilatational mismatch along grain boundaries. If compatibility is to be retained along the interface, an additional set of stresses must then be generated in order to conserve this compatibility. ‘Compatibility stresses’ will also be generated whenever a polycrystal is heated or cooled and the thermal expansion coefficients of the individual grains are different due to thermal expansion anisotropy. In such cases adjacent grains will attempt to change dimensions and develop mismatches by amounts controlled by the parameter Δa*ΔΤ, where Δa is the difference between the thermal expansion coefficients in the appropriate directions, and ΔΤ is the temperature change. These ‘compatibility stresses’ may be relieves if grain boundary motion, triple junction migration and grain growth are possible. These ‘compatibility stresses’ may play important role in the kinetic behavior of the microstructure ranging from influencing the behavior of lattice dislocations near the grain boundaries to promoting grain boundary and triple junction dragging or moving. The motion of the ‘special’ grain boundaries, triple junctions with ‘special’ grain boundaries and twins under the influence of internal mechanical stresses is the main subject of this paper.


2012 ◽  
Vol 535-537 ◽  
pp. 620-627 ◽  
Author(s):  
Chengwei Yang ◽  
Min Jiang ◽  
Xinhua Wang ◽  
Tie Ou

High temperature confocal laser microscope, FE-SEM-EDS and EPMA were utilized to study the Ti-Mn-Al-Si-O-S complex inclusion inducing IAF in Ti deoxidized steel. FactStage was also used to calculate the thermodynamics of inclusion formation. It was demonstrated that when the cooling rate is fixed to 5°C/s, IAF can be induced by complex inclusions which act as the core of IAF at 609°C. Microstructure of the complex inclusions is complicated. These inclusions are consisted of the TiOx-MnO core which is surrounded by MnO-Al2O3-SiO2 complex inclusions and small amount of MnS. The reason that Ti-Mn-Al-Si-O-S complex inclusions can induce IAF is that a Mn-depleted zone is formed by the core TiOx-MnO and the MnS around it. Meanwhile, the difference between MnO-Al2O3-SiO2 and austenite thermal expansion coefficients is tremendous is another principle element for the IAF formation.


1995 ◽  
Vol 401 ◽  
Author(s):  
S. B. Desu ◽  
V. P. Dudkevich ◽  
P. V. Dudkevich ◽  
I. N. Zakharchenko ◽  
G. L. Kushlyan

AbstractThe problem of phase transitions and physical properties of the BaTiO3-type films on the (001) single-crystal substrates of the cubic syngony was solved in the limits of the Landau- Devonshire thermodynamics. The thermoelastic film-substrate interaction caused by the difference between thermal expansion coefficients was strictly taken into consideration. The model was based on the following assumptions: 1) the film is closely conjugated with the substrate; 2) the film is sufficiently “thick”to find itself unstrained at the growth temperature Ts, ( growth stresses were compensated by misfit dislocations ), and 3) the film is sufficiently “thin, and the stresses arising at the temperatures T>Ts may be considered to be uniform.


1986 ◽  
Vol 23 (3) ◽  
pp. 327-333 ◽  
Author(s):  
J. G. Agar ◽  
N. R. Morgenstern ◽  
J. D. Scott

The prediction of stress changes and deformations arising from ground heating requires the coupled solution of the heat transfer and consolidation equations. Heat consolidation as a class of problems is distinct from other thermally induced consolidation problems involving processes such as frost heave and thaw consolidation in that it involves heating to elevated temperatures well above normal ground temperatures. Two of the important parameters required in analyses of heat consolidation problems are thermal expansion coefficients and a coefficient of thermal pore pressure generation.Relationships describing thermal expansion behaviour and thermal pore pressure generation in oil sands are presented. Both drained and undrained thermal expansion coefficients for Athabasca oil sand were determined by means of heating experiments in the temperature range 20–300 °C. The thermal pore pressure generation coefficient was evaluated in undrained heating experiments under constant total confining stresses and under constant effective confining stresses. The equipment and experimental methods developed during this study are appropriate for determination of thermal expansion and pore pressure generation properties of oil sands and other unconsolidated geologic materials. Key words: thermal expansion, oil sand, tar sand, thermal pore pressure generation, heat consolidation, thermal consolidation, coefficient of thermal expansion, thermal stresses, ground heating, thermally enhanced oil recovery, thermoelasticity, undrained heating.


2014 ◽  
Vol 216 ◽  
pp. 85-90
Author(s):  
Marian Miculescu ◽  
Mihai Branzei ◽  
Florin Miculescu ◽  
Daniela Meghea ◽  
Marin Bane

Push rod method for determining linear thermal expansion using vertical differential dilatometer was used in the study of the thermal compatibility of metal-ceramic systems for dental applications. The purpose of this study consisted in evaluating the effectiveness of dental coating by determining the ceramic metal bonding strength of metal-ceramic couples (Ni-Cr and Co-Cr alloy coated with dental ceramic) and correlation with the difference of linear thermal expansion coefficients of metals and ceramics.


1992 ◽  
Vol 281 ◽  
Author(s):  
P. A. Dafesh ◽  
P. M. Adams ◽  
V. Arbet-Engels ◽  
K. L. Wang

ABSTRACTIn this study, photoreflectance (PR) spectroscopy and x-ray rocking curves measurements were used to study the variation in strain configuration, defect propagation, structural properties and direct electronic transition energies in Sim Gen superlattices (SL) and nearly relaxed Si1−x Gex buffer layers grown on < 100 > Si as a function of annealing temperature. The in-plane (a│) and perpendicular (a┴) lattice constants of the alloy buffer layers are found to vary only slightly with anneal temperature, TA, up to a temperature To. For TA To, the in-plane strain changed from roughly zero a│ ≈ a┴ (relaxed) or a┴ > a│ (compressive) to a┴ > a│ (tensile). This change in strain configuration is believed to be caused by the difference in thermal expansion coefficients between the epilayer and the Si substrate. The anneal temperature T0 is also correlated with the disappearance of higher order x-ray harmonics from the SL. This point was also correlated with a large energy shift and broadening of the PR spectra from the SL. The shift in energy of the PR spectra is explained in terms of the interdiffusion of Si and Ge at SL heterointerfaces, and to a lesser degree, the strain induced by the above mentioned difference in thermal expansion coefficients. The PR spectra of the alloy E0 transitions are also observed to shift to higher energy with increasing TA.


1993 ◽  
Vol 325 ◽  
Author(s):  
W. KÜrner ◽  
R. Dieter ◽  
K. Zieger ◽  
F. Goroncy ◽  
A. DÖrnen ◽  
...  

AbstractThe growth of GaAs epilayers on Si should combine the advantages of both materials. The lattice mismatch and the difference in thermal expansion coefficients, however, result in the yet unsolved problems of high dislocation density and thermal stress in the GaAs layer. Recently, considerable improvements have been achieved by a ‘thermal cyclic growth’ (TCG) process. In this study we focus on the reduction of high defect concentration and dislocation density. The improvement of the epilayer quality is verified by DLTS, PL and DCXD. Results of TEM and DLTS measurements lead to the identification of a dislocation related defect.


1999 ◽  
Vol 572 ◽  
Author(s):  
Joachim Krüiger ◽  
Noad Shapiro ◽  
Sudhir Subramanya ◽  
Yihwan Kim ◽  
Henrik Siegle ◽  
...  

ABSTRACTThis paper analyses the influence of the sapphire substrate on stress in GaN epilayers in the temperature range between 4K and 600K. Removal of the substrate by a laser assisted liftoff technique allows, for the first time, to distinguish between stress and other material specific temperature dependencies. In contrast to the prevailing assumption in the literature, that the difference in the thermal expansion coefficients is the main cause for stress it is found that the substrate has a rather small influence in the examined temperature range. The measured temperature dependence of stress is in contradiction to the published values for the thermal expansion coefficients for sapphire and GaN.


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