scholarly journals Structural and Electrical Specification of ZrO2Nano Thin Film Prepared by PLD

2021 ◽  
Vol 24 (2) ◽  
pp. 27-32
Author(s):  
Suroor H. Taha ◽  
◽  
Thamir A. Jumah ◽  

Zirconium dioxide was prepared as a thin film by using pulse laser deposition (PLD).Subsequently, the films had been thermally treated by annealing process at temperature 450 oC. The structural and electrical parameters of thin films were investigated. As-deposited films were amorphous and had a large surface density of ablated particles. The Annealing process resulted change the phase from amorphous to polycrystalline. The X-ray diffraction of all these films has a polycrystalline structure with two different phases named tetragonal and monoclinic. Hall measurements indicate that the charge carriers of all these films were p-type. In addition, the Hall coefficient suffers some change with thin film thickness. The AC results measured showed the films have resistance and capacitance properties. The AC conduction is dominated by hole cattier.

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.


2011 ◽  
Vol 13 ◽  
pp. 81-86 ◽  
Author(s):  
Hong Ying Chen ◽  
Ming Wei Tsai

Transparent conducting oxides (TCOs) are well known and have been widely used for a long time in optoelectronics industries. The most popular TCOs have n-type characteristics. However p-type material is not well established and examined. The delafossite-CuAlO2 is one of the p-type TCOs. In this paper, amorphous Cu-Al-O films were deposited onto (100) p-type silicon substrate by magnetron sputtering. After that, the films were annealed at 800°C for 2 h in different partial oxygen levels ranging from 5*10-5 to 1 atm with N2, air, and O2. X-ray diffraction patterns showed that as-deposited films were amorphous. In addition, delafossite-CuAlO2 (R m and P63/mmc phase) appeared at 800°C in N2, but monoclinic-CuO and spinel-CuAl2O4 phases existed in air and O2. The formation of delafossite-CuAlO2 phase can be explained with thermodynamics. The optoelectronic properties of delafossite-CuAlO2 films were also measured. The direct optical bandgap was around at 3.3 eV, which is comparable with literature data. The electrical conductivity was obtained to be 6.8*10-3 S/cm. The hot-probe method employed to measure the electrical property of the films, which indicates that delafossite-CuAlO2 films have p-type characteristics.


2015 ◽  
Vol 1107 ◽  
pp. 643-648
Author(s):  
Chew Ping Chia ◽  
Zulkarnain Zainal ◽  
Yusran Sulaiman ◽  
Sook Keng Chang

Tin seleno telluride thin film was deposited by pulse electrodeposition onto fluorine doped tin oxide coated glass from aqueous solution containing Sn-EDTA, Na2SeO3 and TeO2. The sample was deposited at a potential of-0.40 V vs Ag/AgCl with various duty cycle between 10% to 90% followed by annealing under nitrogen gas at 250°C for 30 minutes. The crystalline structure, morphology and photoresponse of the thin film was analyzed using X-ray diffraction (XRD), scanning electron microscopy and linear sweep photovoltammetry techniques. The XRD pattern shows polycrystalline cubic structure of SnSe0.4Te0.6 for film deposited at 50% duty cycle. The domain peak at 2θ=28.82o shows a high intensity and a better photoresponse due to the small crystalline size. The tin seleno telluride thin film reflects the loose short rod type aggregates at 10%-50% duty cycle and dendritic structure was formed at deposition of 75% and above. The deposited tin seleno telluride is a p-type semicoductor and the band gap was found to be 1.60 eV with direct transition.


1992 ◽  
Vol 242 ◽  
Author(s):  
B. S. Sywe ◽  
Z. J. Yu ◽  
J. H. Edgar

ABSTRACTA1N films were grown on the (100) plane of 3C-SiC/Si and the (0001) plane of A12O3 substrates by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum (TMA) and ammonia (NH3) as the precursors. The deposited films were characterized by X-ray diffraction (XRD) and a Read thin film camera. At 1150°C, preferentially oriented polycrystalline AlN films were obtained on both substrates and the crystal structure was wurtzite. The epitaxial relations were (1010)AlN//(100)SiC//(100)Si and (0001)AlN// (0001)Al2O3. The attempt to grow cubic AlN on 3C-SiC/Si was not successful.


1992 ◽  
Vol 282 ◽  
Author(s):  
William S. Rees ◽  
David M. Green ◽  
Werner Hesse ◽  
Timothy J. Anderson ◽  
Balu Pathangey

ABSTRACTCompounds of the general forms Zn[N(R)2]2, Zn(N(R)(R')2] and Zn{[N(R)2][N(R')2]} have been prepared, these new compositions have been characterized by multinuclear NMR, GC/MS, FTIR, elemental analysis and single crystal x-ray diffraction, and they have been evaluated for their potentialto serve as “designer dopants” in the epitaxial growth of p-type ZnSe. Retention of the Zn-N bond during deposition should insure selective location of the nitrogen atom on the native selenium lattice site. Precursor vapor pressures, vapor phase decomposition mechanisms, and thin film properties are presented. Results from materials characterization by XRD, SIMS, PL, Raman and SEM are presented in the context of evaluating dopantlevel.


2011 ◽  
Vol 287-290 ◽  
pp. 2318-2321
Author(s):  
Shu Lan Guo ◽  
Jia Li ◽  
Xue Dong Xu

Ferroelectric thin films Bi3.25La0.75Ti3O12,Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 of A-site substitution of Bi4Ti3O12 were fabricated by sol-gel method in the paper. X-ray diffraction pattern shows the prepared thin films exhibit a highly random orientation with predominantly (117) and (00l) orientation. Pr values of Bi3.25La0.75Ti3O12 、Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 thin films were respectively 13.14μC/cm2, 20.65μC/cm2 and 21.23μC/cm2 at the voltage of 10V.FE-SEM shows that the BNT thin film has a dense and homogeneous microstructure without any crack. The BNT thin film thickness is about 300nm.


2014 ◽  
Vol 1670 ◽  
Author(s):  
Enue Barrios-Salgado ◽  
José Campos ◽  
M. T. S. Nair ◽  
P. K. Nair

AbstractChemically deposited thin film stack of SnSe-ZnSe-Cu2-xSe was heated in nitrogen with Se vapor at 350-400 oC to produce Cu2ZnSnSe4 (CZTSe) thin films. For this, a thin film of SnSe with 180 nm thickness was deposited at 26 °C from a chemical bath containing tin(II) chloride, triethanolamine, sodium hydroxide, sodium selenosulfate, and a small quantity of polyvinylpyrrolidone. Thin films of ZnSe and Cu2-xSe were subsequently deposited on this SnSe film, also from chemical bath. The CZTSe thin film produced this way shows X-ray diffraction pattern matching that of Cu2ZnSnSe4 (kesterite/stannite) and have a Zn-rich composition. The film has an optical band gap of 0.9-1.0 eV and p-type electrical conductivity, 0.2-0.06 Ω-1 cm-1.


2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.


Sign in / Sign up

Export Citation Format

Share Document