Synthesis, Characterization and Evaluation of Zinc-Amides as Potential Dopant Sources for ZnSe OMVPE

1992 ◽  
Vol 282 ◽  
Author(s):  
William S. Rees ◽  
David M. Green ◽  
Werner Hesse ◽  
Timothy J. Anderson ◽  
Balu Pathangey
Keyword(s):  
Thin Film ◽  
Lattice Site ◽  
Materials Characterization ◽  
Phase Decomposition ◽  
Vapor Pressures ◽  
X Ray Diffraction ◽  
Film Properties ◽  
X Ray ◽  
Native Selenium ◽  
P Type

ABSTRACTCompounds of the general forms Zn[N(R)2]2, Zn(N(R)(R')2] and Zn{[N(R)2][N(R')2]} have been prepared, these new compositions have been characterized by multinuclear NMR, GC/MS, FTIR, elemental analysis and single crystal x-ray diffraction, and they have been evaluated for their potentialto serve as “designer dopants” in the epitaxial growth of p-type ZnSe. Retention of the Zn-N bond during deposition should insure selective location of the nitrogen atom on the native selenium lattice site. Precursor vapor pressures, vapor phase decomposition mechanisms, and thin film properties are presented. Results from materials characterization by XRD, SIMS, PL, Raman and SEM are presented in the context of evaluating dopantlevel.

Effect of Duty Cycle on Pulse Electrodeposited Tin Seleno Telluride Semiconductor Thin Film

2015 ◽  
Vol 1107 ◽  
pp. 643-648
Author(s):  
Chew Ping Chia ◽  
Zulkarnain Zainal ◽  
Yusran Sulaiman ◽  
Sook Keng Chang
Keyword(s):  
Thin Film ◽  
Duty Cycle ◽  
Dendritic Structure ◽  
X Ray Diffraction ◽  
Direct Transition ◽  
Nitrogen Gas ◽  
Xrd Pattern ◽  
X Ray ◽  
Structure Morphology ◽  
P Type

Tin seleno telluride thin film was deposited by pulse electrodeposition onto fluorine doped tin oxide coated glass from aqueous solution containing Sn-EDTA, Na2SeO3 and TeO2. The sample was deposited at a potential of-0.40 V vs Ag/AgCl with various duty cycle between 10% to 90% followed by annealing under nitrogen gas at 250°C for 30 minutes. The crystalline structure, morphology and photoresponse of the thin film was analyzed using X-ray diffraction (XRD), scanning electron microscopy and linear sweep photovoltammetry techniques. The XRD pattern shows polycrystalline cubic structure of SnSe0.4Te0.6 for film deposited at 50% duty cycle. The domain peak at 2θ=28.82o shows a high intensity and a better photoresponse due to the small crystalline size. The tin seleno telluride thin film reflects the loose short rod type aggregates at 10%-50% duty cycle and dendritic structure was formed at deposition of 75% and above. The deposited tin seleno telluride is a p-type semicoductor and the band gap was found to be 1.60 eV with direct transition.

scholarly journals Structural and Electrical Specification of ZrO2Nano Thin Film Prepared by PLD

2021 ◽  
Vol 24 (2) ◽  
pp. 27-32
Author(s):  
Suroor H. Taha ◽  
◽  
Thamir A. Jumah ◽  
Keyword(s):  
Thin Film ◽  
Annealing Process ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
Electrical Parameters ◽  
Thin Film Thickness ◽  
X Ray ◽  
P Type ◽  
Deposited Films ◽  
Ac Conduction

Zirconium dioxide was prepared as a thin film by using pulse laser deposition (PLD).Subsequently, the films had been thermally treated by annealing process at temperature 450 oC. The structural and electrical parameters of thin films were investigated. As-deposited films were amorphous and had a large surface density of ablated particles. The Annealing process resulted change the phase from amorphous to polycrystalline. The X-ray diffraction of all these films has a polycrystalline structure with two different phases named tetragonal and monoclinic. Hall measurements indicate that the charge carriers of all these films were p-type. In addition, the Hall coefficient suffers some change with thin film thickness. The AC results measured showed the films have resistance and capacitance properties. The AC conduction is dominated by hole cattier.

Cu2ZnSnSe4 from Chemically Deposited Binary Films

2014 ◽  
Vol 1670 ◽  
Author(s):  
Enue Barrios-Salgado ◽  
José Campos ◽  
M. T. S. Nair ◽  
P. K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Diffraction Pattern ◽  
Pattern Matching ◽  
Optical Band Gap ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sodium Selenosulfate ◽  
P Type

AbstractChemically deposited thin film stack of SnSe-ZnSe-Cu2-xSe was heated in nitrogen with Se vapor at 350-400 oC to produce Cu2ZnSnSe4 (CZTSe) thin films. For this, a thin film of SnSe with 180 nm thickness was deposited at 26 °C from a chemical bath containing tin(II) chloride, triethanolamine, sodium hydroxide, sodium selenosulfate, and a small quantity of polyvinylpyrrolidone. Thin films of ZnSe and Cu2-xSe were subsequently deposited on this SnSe film, also from chemical bath. The CZTSe thin film produced this way shows X-ray diffraction pattern matching that of Cu2ZnSnSe4 (kesterite/stannite) and have a Zn-rich composition. The film has an optical band gap of 0.9-1.0 eV and p-type electrical conductivity, 0.2-0.06 Ω-1 cm-1.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

scholarly journals Deep learning for visualization and novelty detection in large X-ray diffraction datasets

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Lars Banko ◽  
Phillip M. Maffettone ◽  
Dennis Naujoks ◽  
Daniel Olds ◽  
Alfred Ludwig
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Artificial Intelligence ◽  
Deep Learning ◽  
Novelty Detection ◽  
Structural Similarity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Patterns ◽  
Post Hoc

AbstractWe apply variational autoencoders (VAE) to X-ray diffraction (XRD) data analysis on both simulated and experimental thin-film data. We show that crystal structure representations learned by a VAE reveal latent information, such as the structural similarity of textured diffraction patterns. While other artificial intelligence (AI) agents are effective at classifying XRD data into known phases, a similarly conditioned VAE is uniquely effective at knowing what it doesn’t know: it can rapidly identify data outside the distribution it was trained on, such as novel phases and mixtures. These capabilities demonstrate that a VAE is a valuable AI agent for aiding materials discovery and understanding XRD measurements both ‘on-the-fly’ and during post hoc analysis.

scholarly journals Energy dispersive X-ray diffraction (EDXRD) for operando materials characterization within batteries

2020 ◽  
Vol 22 (37) ◽  
pp. 20972-20989 ◽  
Author(s):  
Amy C. Marschilok ◽  
Andrea M. Bruck ◽  
Alyson Abraham ◽  
Chavis A. Stackhouse ◽  
Kenneth J. Takeuchi ◽  
...  
Keyword(s):  
Materials Characterization ◽  
Energy Dispersive ◽  
System Level ◽  
X Ray Diffraction ◽  
X Ray ◽  
Non Destructive ◽  
Non Destructive Characterization

This review highlights the efficacy of EDXRD as a non-destructive characterization tool in elucidating system-level phenomena for batteries.

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

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