Preparation and Research of Ferroelectric Properties of Fabricated Thin Film by Doping La and Nd to Bi4Ti3O12

2011 ◽  
Vol 287-290 ◽  
pp. 2318-2321
Author(s):  
Shu Lan Guo ◽  
Jia Li ◽  
Xue Dong Xu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
Thin Film Thickness ◽  
Homogeneous Microstructure ◽  
X Ray ◽  
A Site

Ferroelectric thin films Bi3.25La0.75Ti3O12,Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 of A-site substitution of Bi4Ti3O12 were fabricated by sol-gel method in the paper. X-ray diffraction pattern shows the prepared thin films exhibit a highly random orientation with predominantly (117) and (00l) orientation. Pr values of Bi3.25La0.75Ti3O12 、Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 thin films were respectively 13.14μC/cm2, 20.65μC/cm2 and 21.23μC/cm2 at the voltage of 10V.FE-SEM shows that the BNT thin film has a dense and homogeneous microstructure without any crack. The BNT thin film thickness is about 300nm.

EFFECTS OF La DOPING ON FERROELECTRIC PROPERTIES OF CaBi4Ti4O15 THIN FILMS

2007 ◽  
Vol 14 (02) ◽  
pp. 277-281
Author(s):  
YANXIA DING ◽  
GUANGDA HU ◽  
SUHUA FAN
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
La Doping ◽  
Gel Technique ◽  
A Site

La modified CBTi ( CLBTi ) thin films were prepared on Pt/Ti/SiO 2/ Si (100) substrates by a sol–gel technique. X-ray diffraction analysis showed that single phase of CLBTi thin films were obtained. Their crystallization and hysteresis behavior were strongly dependent on the La contents. An increase of 2Pr as well as a decrease of 2Ec with the increase of La concentration were observed. The leakage properties of CBTi thin films were found to be improved by the La doping. The results were discussed with respect to the effects of La 3+ substitution at perovskite A-site.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

Preparation and Electrical Properties of Bi0.9Nd0.1Fe0.925Mn0.075O3 Thin Films

2012 ◽  
Vol 557-559 ◽  
pp. 1933-1936
Author(s):  
Ning Yan ◽  
Sheng Hong Yang ◽  
Yue Li Zhang
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Low Leakage ◽  
Bifeo3 Thin Films ◽  
Low Leakage Current

Pure BiFeO3(BFO) and Bi0.9Nd0.1Fe0.925Mn0.075O3(BNFM) thin films were deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel method. X-ray diffraction analysis showed that all the films were single perovskite structure and a phase transition appeared in Nd–Mn codoped BiFeO3 thin films. Electrical measurements indicated that the ferroelectric properties of BFO thin films were significantly improved by Nd and Mn codoping. BNFM films exhibit a low leakage current and a good P-E hysteresis loop. The remanent polarization (Pr) value of 74μC/cm2has been obtained in BNFM films, while the coercive field (Ec) is 184kV/cm.

Ferroelectric properties in all solution prepared Bi6Fe2Ti3O18/Ba0.92La0.08SnO3 thin films

2016 ◽  
Vol 30 (35) ◽  
pp. 1650394
Author(s):  
Li Zhang ◽  
Yibao Li ◽  
Zhen Tang ◽  
Yan Deng ◽  
Hui Yuan ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Coercive Field ◽  
Ferroelectric Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting ◽  
Scanning Electron

In this paper, all solution processing is used to prepare both the transparent conducting Ba[Formula: see text]La[Formula: see text]SnO3 (BLSO) thin films as bottom electrodes and ferroelectric Bi6Fe2Ti3O[Formula: see text] (BFTO) thin films. The derived BFTO thin films are characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). The derived thin film is polycrystalline with dense microstructures. The remnant polarization [Formula: see text] at the measurement frequency of 2 kHz can reach [Formula: see text] under the 500 kV/cm electric field and the coercive field [Formula: see text] is 410 kV/cm. The results will provide a feasible route to prepare BFTO thin films on transparent conducting bottom electrodes to realize multifunctionality.

Ferroelectric, Dielectric and Pyroelectric Properties of Highly C-Axis -Oriented Nanostructured (Pb,Sr)(Zr,Ti)O3 Thin Films

2011 ◽  
Vol 287-290 ◽  
pp. 2381-2386
Author(s):  
Tie Dong Cheng ◽  
Xin Gui Tang ◽  
Shu Juan Kuang ◽  
Nan Ding ◽  
Yan Ping Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Process ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Phase Transition Behavior ◽  
Strontium Zirconate ◽  
X Ray ◽  
Surface Image ◽  
Nano Size

Lead strontium zirconate titanate (Pb0.92Sr0.08)(Zr0.65Ti0.35)O3 (PSZT) thin films were grown on Pt (111)/Ti/SiO2/Si(100) substrates using a simple sol-gel method. X-ray diffraction studies confirmed that all the PSZT films undergone various thermal process show highly preferred (001)-orientation. On the surface image of the thin film, many clusters are found, which are composed by grains in size of 0.5-0.8 mm. Between the clusters, the nano-size grain is about 50-80 nm. The root mean square (RMS) roughness of the film surfaces is 5.1 nm. PSZT thin film exhibit excellent ferroelectric behavior, demonstrated by reproducible hystersis loops with high remnant polarization (Pr =49 μC cm-2) and relative low coercive field (Ec=53.5 kV cm-1). The pyroelectric coefficients (p) were measured, at 26 °C, the p=215 mC m-2 K-1 for PSZT films. The dielectric properties as well as phase transition behavior were characterized and a ferroelectric to paraelectric transition were found in the vicinity of 196 °C.

Electrical and Physical Properties of the Bi3.25La0.75Ti3O12 Ferroelectric Thin Films Prepared by Conventional Temperature Annealing Process

2012 ◽  
Vol 512-515 ◽  
pp. 1317-1320
Author(s):  
Fann Wei Yang ◽  
Kai Huang Chen ◽  
Chien Min Cheng
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Annealing Process ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Leakage Currents ◽  
Furnace Annealing ◽  
X Ray ◽  
Conventional Furnace

We have investigated the structure and ferroelectric properties of the Bi3.25La0.75Ti3O12 (BLT) thin films on SiO2/Si substrate fabricated by sol-gel method. We used the BLT films were annealed at various temperatures of 600, 650, and 700°C for one hour by conventional furnace annealing (CTA). The temperature dependence of leakage currents densities of ferroelectric BLT thin films. The crystalline structure of the prepared BLT thin films was analyzed by X-ray diffraction (XRD). Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity. The leakage current density and capacitance of thin film were measured by HP4156C.

Dielectric and Ferroelectric Properties of Modified BiFeO3-PbTiO3 Thin Films Derived from Sol-gel Processing

2003 ◽  
Vol 784 ◽  
Author(s):  
JinRong Cheng ◽  
L. Eric Cross
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Gel Processing ◽  
Room Temperature Dielectric Constant

ABSTRACTIn this paper, thin films of La- modified (Bi,La)FeO3-PbTiO3 (BLF-PT) morphotropic phase boundary (MPB) solid solutions have been prepared by using sol-gel processing. A thin Pb(Zr,Ti)O3 (PZT) template layer was introduced to make BLF-PT thin films adhere tightly to the platinized silicon (Pt/Ti/SiO2/Si) substrate. X-ray diffraction (XRD) analysis revealed that BLF-PT thin films were of the perovskite structure without detectable pyrochlore phase annealing at 650–750°C. The cross sectional and plain view images of or our specimen were observed by using the scan electrical microscope (SEM). The room temperature dielectric constant K and tanδ were of ∼800 and 4% respectively, for BLF-PT thin films using a measurement frequency of 1 kHz. Our preliminary experiments indicated that the sol-gel derived BLF-PT thin films have good insulation resistance and measurable dielectric and ferroelectric responses.

Effects of LSCO Buffer Layer on the Microstructure and Dielectric Properties of Ba0.6Sr0.4TiO3 Films Prepared by Sol-gel Methods

2009 ◽  
Vol 1199 ◽  
Author(s):  
Songwei Han ◽  
Shengwen Yu ◽  
Jinrong Cheng
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
X Ray ◽  
Bst Thin Films ◽  
Structure And Morphology ◽  
Bst Films

AbstractIn this work, Ba0.6Sr0.4TiO3(BST) thin films were deposited on Ti substrates using conductive La0.5Sr0.5CoO3 (LCSO) as buffer layers. Both BST and LSCO films were prepared by sol-gel methods. The structure and morphology of BST and LSCO films were analyzed by X-ray diffraction (XRD). XRD results show that both BST and LSCO films have perovskite structure with random orientation. The dielectric properties of BST films were dependent on the thickness of LSCO buffer layers. Upon using LSCO buffer layers, the dielectric properties of BST films were significantly improved. The dielectric constant, tunability, and dielectric loss of BST thin films for LSCO of 150 nm achieved about 453, 0.032 and 31.26% respectively.

Effect of Annealing Temperature on Silver Doped Titanium Dioxide (Ag/TiO2) Thin Film via Sol-Gel Method

2018 ◽  
Vol 280 ◽  
pp. 26-30 ◽  
Author(s):  
Kamrosni Abdul Razak ◽  
Dewi Suriyani Che Halin ◽  
Mohd Mustafa Abdullah Al Bakri ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Norsuria Mahmed ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Titanium Dioxide ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Titanium Tetraisopropoxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sem Micrograph ◽  
Doped Titanium Dioxide

This study is conducted to investigate the effect of different annealing temperature on the growth of Silver doped Titanium Dioxide (AgTiO2) nanocrystalline thin films.AgTiO2nanocrystalline thin films on silicon wafer have been prepared by sol–gel spin coating. The thin films were characterized for surface morphology and phase analysis by Scanning Electron Microscope (SEM) and X-ray diffraction (XRD. The films prepared by titanium tetraisopropoxide (TTIP) as the precursor under pH of 3.5 ± 0.5 and with annealing temperature of 300, 400, 500 and 600°C for 2h soaking time. X-Ray diffraction shows that only Ag/TiO2thin film annealed at 600°C have anatase TiO2phase. From SEM micrograph, there are cracks and pulled out thin film from the substrate, which were gradually minimize as the annealing temperature increase.

Structural and Optical Properties of (Al, Co) Codoped-ZnO Thin Film

2014 ◽  
Vol 941-944 ◽  
pp. 1302-1305
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Al Doping ◽  
X Ray ◽  
Uv Emission

Zn0.99-xCo0.01AlxO (x=0, 0.01,) thin films have been prepared by a sol-gel method. The structural and optical properties of the samples were investigated. X-ray diffraction and EDX spectrum indicate that Al3+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping,the intensity ratio of the visible to UV emission increases, which is attributed to the increase of O vacancies and Zn interstitials .

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