Effect of Duty Cycle on Pulse Electrodeposited Tin Seleno Telluride Semiconductor Thin Film

2015 ◽  
Vol 1107 ◽  
pp. 643-648
Author(s):  
Chew Ping Chia ◽  
Zulkarnain Zainal ◽  
Yusran Sulaiman ◽  
Sook Keng Chang
Keyword(s):  
Thin Film ◽  
Duty Cycle ◽  
Dendritic Structure ◽  
X Ray Diffraction ◽  
Direct Transition ◽  
Nitrogen Gas ◽  
Xrd Pattern ◽  
X Ray ◽  
Structure Morphology ◽  
P Type

Tin seleno telluride thin film was deposited by pulse electrodeposition onto fluorine doped tin oxide coated glass from aqueous solution containing Sn-EDTA, Na2SeO3 and TeO2. The sample was deposited at a potential of-0.40 V vs Ag/AgCl with various duty cycle between 10% to 90% followed by annealing under nitrogen gas at 250°C for 30 minutes. The crystalline structure, morphology and photoresponse of the thin film was analyzed using X-ray diffraction (XRD), scanning electron microscopy and linear sweep photovoltammetry techniques. The XRD pattern shows polycrystalline cubic structure of SnSe0.4Te0.6 for film deposited at 50% duty cycle. The domain peak at 2θ=28.82o shows a high intensity and a better photoresponse due to the small crystalline size. The tin seleno telluride thin film reflects the loose short rod type aggregates at 10%-50% duty cycle and dendritic structure was formed at deposition of 75% and above. The deposited tin seleno telluride is a p-type semicoductor and the band gap was found to be 1.60 eV with direct transition.

scholarly journals Structural and Electrical Specification of ZrO2Nano Thin Film Prepared by PLD

2021 ◽  
Vol 24 (2) ◽  
pp. 27-32
Author(s):  
Suroor H. Taha ◽  
◽  
Thamir A. Jumah ◽  
Keyword(s):  
Thin Film ◽  
Annealing Process ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
Electrical Parameters ◽  
Thin Film Thickness ◽  
X Ray ◽  
P Type ◽  
Deposited Films ◽  
Ac Conduction

Zirconium dioxide was prepared as a thin film by using pulse laser deposition (PLD).Subsequently, the films had been thermally treated by annealing process at temperature 450 oC. The structural and electrical parameters of thin films were investigated. As-deposited films were amorphous and had a large surface density of ablated particles. The Annealing process resulted change the phase from amorphous to polycrystalline. The X-ray diffraction of all these films has a polycrystalline structure with two different phases named tetragonal and monoclinic. Hall measurements indicate that the charge carriers of all these films were p-type. In addition, the Hall coefficient suffers some change with thin film thickness. The AC results measured showed the films have resistance and capacitance properties. The AC conduction is dominated by hole cattier.

Optical and Electrical Properties of Modified Polythiophene with Tetrafluorobenzene Thin Film

2010 ◽  
Vol 93-94 ◽  
pp. 574-577
Author(s):  
M. Sittishoktram ◽  
Udom Asawapirom ◽  
Tanakorn Osotchan
Keyword(s):  
Thin Film ◽  
Conjugated Polymer ◽  
Optical Absorption Spectroscopy ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
New Class ◽  
Modified Polymer ◽  
Flight Measurement ◽  
Characteristic Measurement

Modified poly(3-hexylthiophene) (P3HT) with molecule of 1,4-dithienyl-2,3,5,6-tetrafluorobenzene in the main chain was developed as a new class of conjugated polymer with high stability. The structural and optical characteristics of modified polymer were investigated by x-ray diffraction (XRD) and optical absorption spectroscopy. By comparing to characteristic of P3HT, the XRD pattern of modified polymer showed the diffraction peak shifted from theta of 5.4o to 5.9o with decrease intensity. This indicates that the modified polymer chain has a reducing in structural coplanarity and crystallinity. Since the electrical property can be related to the morphology and structure of thin film, the electrical conduction of modified polymer was studied with the structure of ITO/modified P3HT/Al. The result of I-V characteristic measurement of modified polymer as a function of temperatures showed that the conductance decreased with decreasing temperature. The mobility of copolymer was also evaluated by using time of flight measurement and mobility value of 5x10-4 cm2/Vs was obtained at room temperature.

Synthesis, Characterization and Evaluation of Zinc-Amides as Potential Dopant Sources for ZnSe OMVPE

1992 ◽  
Vol 282 ◽  
Author(s):  
William S. Rees ◽  
David M. Green ◽  
Werner Hesse ◽  
Timothy J. Anderson ◽  
Balu Pathangey
Keyword(s):  
Thin Film ◽  
Lattice Site ◽  
Materials Characterization ◽  
Phase Decomposition ◽  
Vapor Pressures ◽  
X Ray Diffraction ◽  
Film Properties ◽  
X Ray ◽  
Native Selenium ◽  
P Type

ABSTRACTCompounds of the general forms Zn[N(R)2]2, Zn(N(R)(R')2] and Zn{[N(R)2][N(R')2]} have been prepared, these new compositions have been characterized by multinuclear NMR, GC/MS, FTIR, elemental analysis and single crystal x-ray diffraction, and they have been evaluated for their potentialto serve as “designer dopants” in the epitaxial growth of p-type ZnSe. Retention of the Zn-N bond during deposition should insure selective location of the nitrogen atom on the native selenium lattice site. Precursor vapor pressures, vapor phase decomposition mechanisms, and thin film properties are presented. Results from materials characterization by XRD, SIMS, PL, Raman and SEM are presented in the context of evaluating dopantlevel.

Synthesis and Characterization of SnSe Nanowires by Solvothermal Method

2015 ◽  
Vol 713-715 ◽  
pp. 2924-2927 ◽  
Author(s):  
Jian Li ◽  
Long Yan ◽  
Hui Jin Liu
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Solvothermal Method ◽  
Thin Film Solar Cells ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure Morphology ◽  
Uv Visible

A simple solvothermal route has been used to prepare SnSe nanowires using SnCl4·4H2O and Selenium powder. The phase, structure, morphology, and optical properties of the as-synthesized products were characterized by powder X-ray diffraction (XRD), scan electron microscopy (SEM), Raman spectroscope (RS) and UV-visible spectrophotometer (UV-vis). The results showed that SnSe nanowires were prepared at 200°C for 24 h and in the length of 150-200μm, and width of 1-1.5μm. The band gap of SnSe nanowires was about 1.67 eV, which was close to the optimum band gap of thin film solar cells.

Cu2ZnSnSe4 from Chemically Deposited Binary Films

2014 ◽  
Vol 1670 ◽  
Author(s):  
Enue Barrios-Salgado ◽  
José Campos ◽  
M. T. S. Nair ◽  
P. K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Diffraction Pattern ◽  
Pattern Matching ◽  
Optical Band Gap ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sodium Selenosulfate ◽  
P Type

AbstractChemically deposited thin film stack of SnSe-ZnSe-Cu2-xSe was heated in nitrogen with Se vapor at 350-400 oC to produce Cu2ZnSnSe4 (CZTSe) thin films. For this, a thin film of SnSe with 180 nm thickness was deposited at 26 °C from a chemical bath containing tin(II) chloride, triethanolamine, sodium hydroxide, sodium selenosulfate, and a small quantity of polyvinylpyrrolidone. Thin films of ZnSe and Cu2-xSe were subsequently deposited on this SnSe film, also from chemical bath. The CZTSe thin film produced this way shows X-ray diffraction pattern matching that of Cu2ZnSnSe4 (kesterite/stannite) and have a Zn-rich composition. The film has an optical band gap of 0.9-1.0 eV and p-type electrical conductivity, 0.2-0.06 Ω-1 cm-1.

scholarly journals A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1099 ◽  
Author(s):  
Song-Yi Ahn ◽  
Kyung Park ◽  
Daehwan Choi ◽  
Jozeph Park ◽  
Yong Joo Kim ◽  
...  
Keyword(s):  
Copper Oxide ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Oxide Semiconductor ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
Flow Rates ◽  
X Ray ◽  
Nitrogen Incorporation ◽  
P Type

In the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate that the addition of nitrogen results in an increased optical bandgap, accompanied by significantly reduced tail states compared to pristine copper oxide. In addition, X-ray diffraction and X-ray photoelectron spectroscopy reveal that the incorporation of nitrogen stimulates the transition from copper (II) oxide to copper (I) oxide.

Synthesis of Co3O4 Multilayer Nanosheet Material and its Promising Gas Sensing Property

2014 ◽  
Vol 937 ◽  
pp. 231-236 ◽  
Author(s):  
Ming Li Yin ◽  
Sheng Zhong Liu
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gas Sensing ◽  
Annealing Treatment ◽  
Solution Concentration ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sensing Material ◽  
Ethanol Resistance ◽  
Structure Morphology ◽  
P Type

Co3O4multilayer nanosheets were synthesized by a hydrothermal method and a post annealing treatment process. The effect of solution concentration and ratio on the morphology of Co3O4precursor was studied. The crystalline structure, morphology and elemental composition of Co3O4multilayer nanosheets were characterized by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy technologies. When exposed to reducing gas such as ethanol, resistance of Co3O4multilayer nanosheet sensor increases quickly, demonstrating that the Co3O4multilayer nanosheets are p-type conductivity. For 100 ppm alcohol at 240 °C, the sensor response is as high as 32, indicating that the powder of Co3O4multilayer nanosheets is a very promising low-powder gas sensing material.

scholarly journals PENUMBUHAN DAN KARAKTERISASI LAPISAN TIPIS PbTiO3 YANG DISIAPKAN DENGAN TEKNIK SPIN COATING

Molekul ◽  
2008 ◽  
Vol 3 (1) ◽  
pp. 48
Author(s):  
Bilalodin Bilalodin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
Bulk Powder ◽  
Pbtio3 Thin Film ◽  
Coating Method

The growth of PbTiO3 ferroelectric thin films have successfully done. Thin films were made from bulk (powder) PbTiO3 dissolved in methanol solution. The condensation was mixed during 1 hour to get homogeneous condensation. Thin films were grown above corning substrates by spin coating method. Optimation was done by various of annealing temperature. The physical properties of thin films were characterized by Energi Dispersive X-Ray Spectroscopy (EDS), X-Ray Diffraction (XRD), Scanning and Electron Microscopy (SEM). EDS measurement showed that the stoichiometry composition ratio of Pb/Ti is 1/1.26 at annealing temperature 600oC and 1/1.29 at annealing temperature 700oC. The result of XRD pattern showed that crystal structure of PbTiO3 thin films are tetragonal. The calculated lattice parameters ontained from Chohen Method are a=b= 3.873 Å dan c= 4.130Å. The result of SEM PbTiO3 thin film showed that thin film has globular grain size.

A New Method for Measuring the Residual Stresses in Multi-Layered Thin Film Systems

2012 ◽  
Vol 591-593 ◽  
pp. 884-890
Author(s):  
Mei Liu ◽  
Hai Hui Ruan ◽  
Liang Chi Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stresses ◽  
Single Point ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
Xrd Techniques ◽  
The Individual ◽  
Layered Thin Film

To meet different electrical or optical functionalities, thin films are often of multiple layers processed at high temperatures. Substantial residual stresses can therefore develop in such thin film systems due to the disparate thermal properties of the individual material layers. High stresses can lead to mechanical failure of the systems and thus understanding the residual stresses in thin film systems is important. This paper presents a systematic way to characterize the residual stresses in epitaxial, polycrystalline and amorphous layers by using X-ray diffraction (XRD) techniques. The single-point XRD pattern renders the stresses of crystalline layers and the scanning XRD gives the curvature of the whole film. Based on the newly-developed analytical model, the residual stresses of each layer can all be determined.

High Resolution Replication of Organoclay Surfaces

1982 ◽  
Vol 40 ◽  
pp. 576-577
Author(s):  
W. W. Barker ◽  
W. E. Rigsby ◽  
V. J. Hurst ◽  
W. J. Humphreys
Keyword(s):  
Clay Mineral ◽  
Organic Molecule ◽  
Organic Molecules ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
Naturally Occurring ◽  
Silicate Layers ◽  
Mineral Identification

Experimental clay mineral-organic molecule complexes long have been known and some of them have been extensively studied by X-ray diffraction methods. The organic molecules are adsorbed onto the surfaces of the clay minerals, or intercalated between the silicate layers. Natural organo-clays also are widely recognized but generally have not been well characterized. Widely used techniques for clay mineral identification involve treatment of the sample with H2 O2 or other oxidant to destroy any associated organics. This generally simplifies and intensifies the XRD pattern of the clay residue, but helps little with the characterization of the original organoclay. Adequate techniques for the direct observation of synthetic and naturally occurring organoclays are yet to be developed.

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