scholarly journals Hot-probe method for evaluation of majority charged carriers concentration in semiconductor thin films

2013 ◽  
Vol 26 (3) ◽  
pp. 187-195 ◽  
Author(s):  
Alexander Axelevitch ◽  
Gady Golan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Probe Method ◽  
Technological Parameters ◽  
Film Properties ◽  
Characterization Methods ◽  
Novel Approach ◽  
Semiconductor Thin Films ◽  
Hot Probe ◽  
Definition Of

Physical properties of thin films significantly differ from those of bulk materials. Also, these properties are influenced from the technological parameters of the films deposition technique. Therefore, characterization methods for evaluation of thin film properties become of high importance. A novel approach to the well-known "Hot-Probe" method is proposed and applied in our work. The conventional Hot Probe characterization method enables only the definition of a semiconductor type, P or N, by identifying the majority of the charged carriers. According to the new Hot Probe technique, one can measure and calculate the impurities concentration and charged carriers dynamic parameters. Feasibility proof of the upgraded Hot Probe method was done in Si and Ge bulk, and in thin film semiconductor samples of In2O3 and VO2.

Quantitative Image Analysis of Fractal-like Thin Films of Organic Semiconductors

2018 ◽  
Author(s):  
Weikun Zhu ◽  
Erfan Mohammadi ◽  
Ying Diao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Image Analysis ◽  
Fractal Dimension ◽  
Organic Semiconductors ◽  
Film Growth ◽  
Electronic Device ◽  
Significant Control ◽  
Semiconductor Thin Films ◽  
Two Parameters

Morphology modulation offers significant control over organic electronic device performance. However, morphology quantification has been rarely carried out via image analysis. In this work, we designed a MATLAB program to evaluate two key parameters describing morphology of small molecule semiconductor thin films: fractal dimension and film coverage. We then employ this program in a case study of meniscus-guided coating of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C<sub>8</sub>-BTBT) under various conditions to analyze a diverse and complex morphology set. The evolution of morphology in terms of fractal dimension and film coverage was studied as a function of coating speed. We discovered that combined fractal dimension and film coverage can quantitatively capture the key characteristics of C<sub>8</sub>-BTBT thin film morphology; change of these two parameters further inform morphology transition. Furthermore, fractal dimension could potentially shed light on thin film growth mechanisms.

scholarly journals Detection of nitroaromatic vapours with diketopyrrolopyrrole thin films: exploring the role of structural order and morphology on thin film properties and fluorescence quenching efficiency

2015 ◽  
Vol 51 (6) ◽  
pp. 1143-1146 ◽  
Author(s):  
Monika Warzecha ◽  
Jesus Calvo-Castro ◽  
Alan R. Kennedy ◽  
Alisdair N. Macpherson ◽  
Kenneth Shankland ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fluorescence Quenching ◽  
Optical Detection ◽  
Film Properties ◽  
Structural Order ◽  
Quenching Efficiency ◽  
First Time

Sensitive optical detection of nitroaromatic vapours with diketopyrrolopyrrole thin films is reported for the first time.

Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

2018 ◽  
Vol 6 (6) ◽  
pp. 1393-1398 ◽  
Author(s):  
Shengbin Nie ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
P Type

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs).

Enhanced properties of metal–organic framework thin films fabricated via a coordination modulation-controlled layer-by-layer process

2017 ◽  
Vol 5 (26) ◽  
pp. 13665-13673 ◽  
Author(s):  
Suttipong Wannapaiboon ◽  
Kenji Sumida ◽  
Katharina Dilchert ◽  
Min Tu ◽  
Susumu Kitagawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Adsorption Capacity ◽  
Metal Organic Framework ◽  
Layer By Layer ◽  
Film Properties ◽  
Metal Organic ◽  
Enhanced Properties ◽  
P Addition ◽  
Organic Framework

Addition of a modulator in the LPE process enhances MOF thin film properties by boosting their crystallinity, orientation uniformity, and adsorption capacity.

Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

1998 ◽  
Vol 520 ◽  
Author(s):  
A. Maldonado ◽  
D.R. Acosta ◽  
M. De La Luz Olvera ◽  
R. Castanedo ◽  
G. Torres ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Film Properties ◽  
Preferential Growth ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

Observation of Dislocation DisAppearance in Aluminum Thin Films and Consequences for Thin Film Properties

1997 ◽  
Vol 505 ◽  
Author(s):  
P. Müllner ◽  
E. Arzt
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Short Range ◽  
Dislocation Core ◽  
Interaction Force ◽  
High Temperature Strength ◽  
Film Properties ◽  
Aluminum Films ◽  
Transmission Electron ◽  
Diffusive Movement

ABSTRACTDislocation structures in Al-Cu thin films have been studied by transmission electron microscopy (TEM). We have observed that the contrast of interface dislocations disappears in the electron beam. We assume that the contrast dissolution is due to the spreading of the dislocation core at the crystalline/amorphous interface or due to a diffusive movement of the dislocation through the oxide. In any case, the relaxation is assumed to be controled by irradiation induced diffusion. As a consequence, the short range stresses and at least partly also the long range stresses of the dislocations relax. This relaxation changes the interaction force between dislocations and may thus significantly affect the mechanical properties of thin films. It is concluded that interaction between interface dislocations may not be responsible for the high temperature strength of aluminum films.

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