Observation of Dislocation DisAppearance in Aluminum Thin Films and Consequences for Thin Film Properties

1997 ◽  
Vol 505 ◽  
Author(s):  
P. Müllner ◽  
E. Arzt
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Short Range ◽  
Dislocation Core ◽  
Interaction Force ◽  
High Temperature Strength ◽  
Film Properties ◽  
Aluminum Films ◽  
Transmission Electron ◽  
Diffusive Movement

ABSTRACTDislocation structures in Al-Cu thin films have been studied by transmission electron microscopy (TEM). We have observed that the contrast of interface dislocations disappears in the electron beam. We assume that the contrast dissolution is due to the spreading of the dislocation core at the crystalline/amorphous interface or due to a diffusive movement of the dislocation through the oxide. In any case, the relaxation is assumed to be controled by irradiation induced diffusion. As a consequence, the short range stresses and at least partly also the long range stresses of the dislocations relax. This relaxation changes the interaction force between dislocations and may thus significantly affect the mechanical properties of thin films. It is concluded that interaction between interface dislocations may not be responsible for the high temperature strength of aluminum films.

Short-range order in amorphous co-sputtered Ta-Al thin films

1986 ◽  
Vol 44 ◽  
pp. 860-861
Author(s):  
J.C. Barry ◽  
R.S. Timsit ◽  
D. Landheer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
High Resolution ◽  
Short Range ◽  
Short Range Order ◽  
Range Order ◽  
Transmission Electron ◽  
Thin Film Resistors ◽  
Diffraction Patterns

Tantalum-aluminium thin films have assumed considerable technological importance since the discovery in the late 1960's that the films are useful in the fabrication of thin film resistors and capacitors. It is generally claimed that these films, when prepared by co-sputtering Ta and Al, are amorphous over a range of Ta concentrations extending approximately from 15 to 75 at%, and are crystalline beyond this range. Diffuse electron diffraction patterns and ‘mottle pattern’ transmission electron micrographs are typical characteristics of the amorphous phase. In this present study we have attempted to identify any atomic short range order in the amorphous Ta-Al films and to follow the changes in this order as the Ta concentration increases across the amorphous/crystalline transition. The co-sputtered Ta-Al films of ≈100A thickness were examined in a high resolution 4000EX electron microscope (top entry, ±15°(x,y) tilt, Cs = 1.0mm ) at 400kV.

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

scholarly journals Detection of nitroaromatic vapours with diketopyrrolopyrrole thin films: exploring the role of structural order and morphology on thin film properties and fluorescence quenching efficiency

2015 ◽  
Vol 51 (6) ◽  
pp. 1143-1146 ◽  
Author(s):  
Monika Warzecha ◽  
Jesus Calvo-Castro ◽  
Alan R. Kennedy ◽  
Alisdair N. Macpherson ◽  
Kenneth Shankland ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fluorescence Quenching ◽  
Optical Detection ◽  
Film Properties ◽  
Structural Order ◽  
Quenching Efficiency ◽  
First Time

Sensitive optical detection of nitroaromatic vapours with diketopyrrolopyrrole thin films is reported for the first time.

Simultaneous Occurrence of Multiphases in the Interfacial Reactions of Ultrahigh Vacuum Deposited Ti, Hf and Cr Thin Films on (111)Si

1993 ◽  
Vol 311 ◽  
Author(s):  
W.W. Hsieh ◽  
J.J. Lin ◽  
M.M. Wang ◽  
L.L. Chen
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Simultaneous Occurrence ◽  
Image Simulation ◽  
Reaction Sequence ◽  
Transmission Electron ◽  
Amorphous Interlayer

ABSTRACTSimultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh vacuum deposited Ti, Hf and Cr thin films on (111)Si by high resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the three systems, an amorphous interlayer as well as a number of crystalline phase were found to form simultaneously in the early stages of interfacial reactions. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV deposited refractory thin films. The results called for a reexamination of generally accepted “difference” in reaction sequence between bulk and thin film couples.

scholarly journals Optical and Electrical Properties of Thin Films of CuS Nanodisks Ensembles Annealed in a Vacuum and Their Photocatalytic Activity

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
J. Santos Cruz ◽  
S. A. Mayén Hernández ◽  
F. Paraguay Delgado ◽  
O. Zelaya Angel ◽  
R. Castanedo Pérez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hydrogen Peroxide ◽  
Photocatalytic Activity ◽  
Electrical Properties ◽  
Absolute Temperature ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Blue Solution

Effects on the optical, electrical, and photocatalytic properties of undoped CuS thin films nanodisks vacuum annealed at different temperatures were investigated. The chemical bath prepared CuS thin films were obtained at 40°C on glass substrates. The grain size of13.5±3.5 nm was computed directly from high-resolution transmission electron microscopy (HRTEM) images. The electrical properties were measured by means of both Hall effect at room temperature and dark resistivity as a function of the absolute temperature 100–330 K. The activation energy values were calculated as 0.007, 0.013, and 0.013 eV for 100, 150, and 200°C, respectively. The energy band gap of the films varied in the range of 1.98 up to 2.34 eV. The photocatalytic activity of the CuS thin film was evaluated by employing the degradation of aqueous methylene blue solution in the presence of hydrogen peroxide. The CuS sample thin film annealed in vacuum at 150°C exhibited the highest photocatalytic activity in presence of hydrogen peroxide.

Microstructure of Thin Film Photoconductors and its Correlation with Optical and Electronic Properthss

1996 ◽  
Vol 452 ◽  
Author(s):  
U. Klement ◽  
D. Horst ◽  
F. Ernst
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Transmission Electron ◽  
Electronic Eye

AbstractThe objective of this work is to find a material to replace amorphous hydrogenated silicon used as photosensitive part in the “retina” of an “electronic eye”. For that reason, ZnS, ZnSe, CdS and CdSe were chosen for investigations. Thin films, prepared by chemical vapour deposition, were characterized by transmission electron microscopy. The observed microstructures were correlated with the optoelectronic properties of these materials. CdSe was found to be the most promising material for our application. Hence, the influence of a dielectric interlayer and the effects of additional annealing treatments were analyzed for CdSe and will be discussed with respect to the optimization of the material.

A Technique for the Preparation of Thin-Film Cross-Sections for Transmission Electron Microscopy

1990 ◽  
Vol 199 ◽  
Author(s):  
M. Libera ◽  
T. A. Nguyen ◽  
C. Hwang
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Data Storage ◽  
Cross Sections ◽  
Film Plane ◽  
Microstructural Study ◽  
Transmission Electron ◽  
Sophisticated Equipment ◽  
Tem Grid

ABSTRACTA number of techniques for producing TEM cross-sections of thin films have been described in recent years as the need for improved and more-thorough microstructural study of thin-film materials has grown. We have developed a method for producing such cross-sections which involves little sophisticated equipment other than an ion mill for thinning. Following the method of Bravman and Sinclair (J. Elec. Micrs. Tech 1,53–61 (1984)), the film of interest is either deposited on or epoxied to a silicon wafer and a composite of six silicon beams (=3mm × 25mm × 0.5mm) is fabricated. Slices are cut from this composite perpendicular to the film plane, and each slice is mechanically thinned by a series of simple grinding and polishing steps to ∼ 50–100μm. Dimpling is not necessary. The specimen is mounted onto a slotted TEM grid which provides a vehicle for safe handling, and the specimen is ion milled to perforation. We have found the technique to be relatively fast, reliable, and simple. Its success hinges on minimizing the amount of direct handling required when the specimen is thin and fragile. We present a detailed recipe describing its various steps and show typical results from studies of thin films for data-storage applications.

Enhanced properties of metal–organic framework thin films fabricated via a coordination modulation-controlled layer-by-layer process

2017 ◽  
Vol 5 (26) ◽  
pp. 13665-13673 ◽  
Author(s):  
Suttipong Wannapaiboon ◽  
Kenji Sumida ◽  
Katharina Dilchert ◽  
Min Tu ◽  
Susumu Kitagawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Adsorption Capacity ◽  
Metal Organic Framework ◽  
Layer By Layer ◽  
Film Properties ◽  
Metal Organic ◽  
Enhanced Properties ◽  
P Addition ◽  
Organic Framework

Addition of a modulator in the LPE process enhances MOF thin film properties by boosting their crystallinity, orientation uniformity, and adsorption capacity.

Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

1998 ◽  
Vol 520 ◽  
Author(s):  
A. Maldonado ◽  
D.R. Acosta ◽  
M. De La Luz Olvera ◽  
R. Castanedo ◽  
G. Torres ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Film Properties ◽  
Preferential Growth ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

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