Detection Of Die Attach Defects Through Rapid Thermal Transient Tests

2021 ◽  
Author(s):  
Voon Hon Wong ◽  
Andras Vass-Varnai ◽  
Antonio Caruso ◽  
Tomoaki Hara ◽  
Alvin Hsu ◽  
...  
Keyword(s):  
Die Attach ◽  
Thermal Transient

Thermal transient characteristics of die attach in high power LED PKG

2008 ◽  
Vol 48 (3) ◽  
pp. 445-454 ◽  
Author(s):  
Hyun-Ho Kim ◽  
Sang-Hyun Choi ◽  
Sang-Hyun Shin ◽  
Young-Ki Lee ◽  
Seok-Moon Choi ◽  
...  
Keyword(s):  
High Power ◽  
Transient Characteristics ◽  
Die Attach ◽  
High Power Led ◽  
Thermal Transient

Analysis of Two Electrical Failures Caused by Die Attach of Exposed Pad Package

2014 ◽  
Author(s):  
Jinglong Li ◽  
Motohiko Masuda ◽  
Yi Che ◽  
Miao Wu
Keyword(s):  
Bonding Process ◽  
Die Attach ◽  
Die Bonding ◽  
Generic Analysis

Abstract Die attach is well known in die bonding process. Its electrical character is simple. But some failures caused by die attach are not so simple. And it is not proper to analyze by a generic analysis flow. The analysis of two failures caused by die attach are presented in this paper.

Simplified Thermal Transient Test for Electro Explosive Devices

1983 ◽  
Author(s):  
Yong W. Kwon ◽  
Wallace E. Voreck
Keyword(s):  
Thermal Transient ◽  
Explosive Devices

Thermal Simulation of Four Die-Attach Materials

2008 ◽  
Author(s):  
Gregory K. Ovrebo
Keyword(s):  
Thermal Simulation ◽  
Die Attach

scholarly journals Experimental Determination of the Heat Transfer Coefficient of Real Cooled Geometry Using Linear Regression Method

Energies ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 180
Author(s):  
Asif Ali ◽  
Lorenzo Cocchi ◽  
Alessio Picchi ◽  
Bruno Facchini
Keyword(s):  
Heat Transfer ◽  
Heat Flux ◽  
Heat Transfer Coefficient ◽  
Linear Regression ◽  
Surface Temperature ◽  
Transfer Coefficient ◽  
External Surface ◽  
Internal Surface ◽  
Regression Method ◽  
Thermal Transient

The scope of this work was to develop a technique based on the regression method and apply it on a real cooled geometry for measuring its internal heat transfer distribution. The proposed methodology is based upon an already available literature approach. For implementation of the methodology, the geometry is initially heated to a known steady temperature, followed by thermal transient, induced by injection of ambient air to its internal cooling system. During the thermal transient, external surface temperature of the geometry is recorded with the help of infrared camera. Then, a numerical procedure based upon a series of transient finite element analyses of the geometry is applied by using the obtained experimental data. The total test duration is divided into time steps, during which the heat flux on the internal surface is iteratively updated to target the measured external surface temperature. The final procured heat flux and internal surface temperature data of each time step is used to find the convective heat transfer coefficient via linear regression. This methodology is successfully implemented on three geometries: a circular duct, a blade with U-bend internal channel, and a cooled high pressure vane of real engine, with the help of a test rig developed at the University of Florence, Italy. The results are compared with the ones retrieved with similar approach available in the open literature, and the pros and cons of both methodologies are discussed in detail for each geometry.

Thermal-Transient Analysis for Cooling Time on New Formulation of Metal Epoxy Composite (MEC) as Mold Inserts

2021 ◽  
Author(s):  
H. Radhwan ◽  
S. Sharif ◽  
Z. Shayfull ◽  
M. A. Suhaimi ◽  
Abdellah l-hadj ◽  
...  
Keyword(s):  
Transient Analysis ◽  
Epoxy Composite ◽  
Cooling Time ◽  
Thermal Transient ◽  
New Formulation ◽  
Thermal Transient Analysis

Effect of sintering density on thermal reliability by non-pressure sintering die-attach

2021 ◽  
Author(s):  
Ryo Kato ◽  
Masatoshi Okuda ◽  
Suguru Hashidate ◽  
Takamichi Mori ◽  
Junichiro Minami ◽  
...  
Keyword(s):  
Thermal Reliability ◽  
Die Attach

Thermally stable high temperature die attach solution

2016 ◽  
Vol 89 ◽  
pp. 1310-1314 ◽  
Author(s):  
Seyed Amir Paknejad ◽  
Ali Mansourian ◽  
Yohan Noh ◽  
Khalid Khtatba ◽  
Samjid H. Mannan
Keyword(s):  
High Temperature ◽  
Thermally Stable ◽  
Die Attach

Silicon Carbide Die Attach Scheme for 500°C Operation

2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Semiconductor Devices ◽  
Single Crystal Silicon ◽  
Film Material ◽  
Crystal Silicon ◽  
Pure Alumina ◽  
Die Attach

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.

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