Buffer trapping-induced R<inf>ON</inf> degradation in GaN-on-Si power transistors: Role of electron injection from Si substrate

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

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Development of CMOS integrated AlN based SAW-Filter and the role of Si substrate resistivity

2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) ◽

10.1109/iscdg.2012.6359984 ◽

2012 ◽

Cited By ~ 2

Author(s):

U. Kaletta ◽

D. Wolansky ◽

M. Fraschke ◽

Ch. Wenger

Keyword(s):

Si Substrate

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Retarded Growth of Sputtered HfO2 Films on Germanium

MRS Proceedings ◽

10.1557/proc-811-d5.5/b5.5 ◽

2004 ◽

Vol 811 ◽

Author(s):

Koji Kita ◽

Masashi Sasagawa ◽

Masahiro Toyama ◽

Kentaro Kyuno ◽

Akira Toriumi

Keyword(s):

Film Growth ◽

Early Stage ◽

Gate Oxide ◽

Interface Layer ◽

Film Deposition ◽

Si Substrate ◽

Equivalent Thickness ◽

Ternary Compounds ◽

Si Substrates

ABSTRACTHfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

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Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

MRS Proceedings ◽

10.1557/proc-1068-c06-09 ◽

2008 ◽

Vol 1068 ◽

Cited By ~ 5

Author(s):

Tsuneo Ito ◽

Yutaka Terada ◽

Takashi Egawa

Keyword(s):

Sapphire Substrate ◽

Deep Level ◽

Buffer Layers ◽

Si Substrate ◽

Electron Traps ◽

Organic Vapor ◽

Pair Number ◽

Metal Organic ◽

Transient Spectroscopy ◽

Gan On Si

ABSTRACTDeep level electron traps in n-GaN grown by metal organic vapor phase epitaxy (MOVPE) on Si (111) substrate were studied by means of deep level transient spectroscopy (DLTS). The growth of n-GaN on different pair number of AlN/GaN superlattice buffer layers (SLS) system and on c-face sapphire substrate are compared. Three deep electron traps labeled E4 (0.7-0.8 eV), E5 (1.0-1.1 eV), were observed in n-GaN on Si substrate. And the concentrations of these traps observed for n-GaN on Si are very different from that on sapphire substrate. E4 is the dominant of these levels for n-GaN on Si substrate, and it behaves like point-defect due to based on the analysis by electron capture kinetics, in spite of having high dislocation density of the order of 1010 cm−3.

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