scholarly journals PHOTOLUMINESCENCE EMISSION OF Cu DOPED ZnS MICROSTRUCTURES SYNTHESIZED BY THERMAL EVAPORATION

Author(s):  
Nghia Nguyen Van

Cu doped ZnS microstructures were prepared by the thermal evaporation method using ZnS powder and CuCl2.2H2O powder as precusor materials. The microstructures was characterized by using X-ray diffraction (XRD) analysis. The XRD studies indicated that there are two phases (ZnS and ZnO) at the undoped sample, but  most of the samples are only having wurtzite (hexagonal) phase of ZnS after doping. The photoluminescence emission and photoluminescence excitation of ZnS and Cu2+ doped ZnS microstructures have been studied. The photoluminescence excitation spectra of  ZnS microstructures is present around 374 nm. After doping of Cu2+ ion the absorption wavelength shifted towards the lower wavelength, this blue shift in the absorption edge is a measure of increased band gap. The emission spectrum of pure ZnS has a green emission band centred at around 520 nm. After doping with Cu2+ ion the luminescence centers were transferred to 516 nm and a strong blue peak at 440 nm appears. The reasons of these will be discussed in this paper.

2015 ◽  
Vol 47 ◽  
pp. 462-464 ◽  
Author(s):  
Ren Arita ◽  
Yuki Minami ◽  
Marilou Cadatal-Raduban ◽  
Minh Hong Pham ◽  
Melvin John Fernandez Empizo ◽  
...  

NANO ◽  
2013 ◽  
Vol 08 (04) ◽  
pp. 1350043
Author(s):  
JUN MA ◽  
GONG-YI LI ◽  
XIAO-DONG LI ◽  
GANG PENG ◽  
YI-HE LI ◽  
...  

A novel hierarchical nanostructure of SiO2 nanowires standing on SiO2 microwires was synthesized through a catalyst-free thermal evaporation method in nitrogen atmosphere. The SiO2 nanowires have an average diameter of 100 nm and length of 2 μm, while the diameter of the SiO2 microwires is around 10 μm and the length is hundreds of micrometers. The photoluminescence spectrum of the SiO2 hierarchical nanostructure shows stable blue and green emission at 442 nm and 533 nm, respectively. An oxygen-assisted three-step growth mechanism was suggested to interpret the growth of the SiO2 hierarchical nanostructure.


1992 ◽  
Vol 283 ◽  
Author(s):  
Edward B. Stokes ◽  
Peter D. Persans

ABSTRACTWe present photoluminescence excitation spectra for glasses doped with CdSxSe(1-x). The peak of the emission spectrum is blue shifted toward the bandgap as excitation energy flux is increased. Total photoluminescence emission intensity is observed to be significantly enhanced and blue shifted by exciting with photon energies greater than ∼4 eV. A simple model of the nanoparticle band structure is presented to account for the observed spectra.


2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Peijie Lin ◽  
Sile Lin ◽  
Shuying Cheng ◽  
Jing Ma ◽  
Yunfeng Lai ◽  
...  

Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.


2019 ◽  
Vol 233 (9) ◽  
pp. 1215-1231 ◽  
Author(s):  
Farzana Majid ◽  
Abdul Malik ◽  
Sadia Ata ◽  
Zaheer Hussain ◽  
Ismat Bibi ◽  
...  

Abstract CdTe/CdSe multilayer heterostructures thin films were prepared by thermal evaporation method. The CdTe/CdSe layers deposited on glass substrate and effects of annealing temperature on optical and structural properties of thin films were investigated. The XRD analysis revealed that CdTe and CdSe were in cubic (111) and hexagonal (100) forms. By increasing the annealing temperature, intensity of XRD peaks increased for multilayer heterostructures. Band alignment in heterostructures of CdTe/CdSe was of type II. Energy band gaps values for CdTe/CdSe multilayer heterostructures increased with respect to bulk compounds. During emission, red and blue shifts are observed in visible region in photoluminescence spectrum of CdTe/CdSe samples. Due to better crystallinity of multilayer thin film, 1LO, 2LO and 3LO phonon modes were observed in Raman spectrum.


2007 ◽  
Vol 7 (12) ◽  
pp. 4522-4528 ◽  
Author(s):  
Ahmad Umar ◽  
S. H. Kim ◽  
J. H. Kim ◽  
Y. B. Hahn

Single-crystalline with perfect hexagonal-shaped ZnO nanowires and nanorods, possessing the Zn-terminated (0001) facets bounded with the six-crystallographic equivalent {0110} surfaces, have been grown on Au-coated silicon substrate via thermal evaporation method using the metallic zinc powder in presence of oxygen. The detailed structural analyses reveal that the obtained nano-structures are single-crystalline with the wurtzite hexagonal phase and are preferentially oriented in the c-axis, [0001] direction. Raman spectra exhibit a sharp and strong optical phonon E2 mode at 437 cm−1 further confirms the good crystal quality with wurtzite hexagonal crystal structure for the deposited products. The room-temperature photoluminescence (PL) spectra, for both the structures, showed a sharp and strong UV emission with a suppressed green emission, indicating the good optical properties for the as-grown nanostructures.


2005 ◽  
Vol 19 (15n17) ◽  
pp. 2710-2715
Author(s):  
QING ZHAO ◽  
HUIZHI AN ◽  
XUHUI LUO ◽  
BIN XIANG ◽  
DAPENG YU

ZnSe nanoparticles were synthesized via a simple, effective thermal evaporation method by a vapor phase reaction of Zn and Se powder. Particle characterization was performed by X-ray diffraction (XRD), transmission electron microscopy (TEM). It is found that the higher the growth temperature, the larger the nanoparticles. Obvious blue shift was observed in the photoluminescence (PL) spectra at room temperature with decreasing particle size. Raman spectra of the as-grown ZnSe nanoparticles were compared with that of the bulk ZnSe crystal. Though no obvious peak shift was observed for both the transverse optical (TO) and longitudinal optical (LO) phonon modes within the apparatus spectral resolution, non-symmetrical broadening of the LO phonon mode is obvious, indicating that the phonon lifetime is shorter in ZnSe nanoparticles than in bulk material.


2007 ◽  
Vol 7 (2) ◽  
pp. 486-489 ◽  
Author(s):  
Sathyaharish Jeedigunta ◽  
Manoj K. Singh ◽  
Ashok Kumar ◽  
M. Shamsuzzoha

High-density single-crystalline Zn2SnO4 nanowires have been successfully synthesized by using a simple thermal evaporation method by heating a mixture of ZnO and SnO2 nano powders. The products in general contain various geometries of wires, with an average diameter of 80–100 nm. These nanowires are ultra-long, up to 100 microns. The transmission electron microscopy study showed that these nanowires exhibited zigzag twinned geometry, and grow along the 〈111〉 direction. Low-temperature photoluminescence properties of the nanowires were measured, showing a strong green emission band at about 515 nm and a weak peak corresponding to UV emission at about 378 nm, which have not been reported before.


2014 ◽  
Vol 153 ◽  
pp. 321-325 ◽  
Author(s):  
D.Q. Trung ◽  
N.T. Tuan ◽  
H.V. Chung ◽  
P.H. Duong ◽  
P.T. Huy

2017 ◽  
Vol 727 ◽  
pp. 598-603
Author(s):  
Ling Li Wang ◽  
Shi Quan Feng ◽  
Hai Yan Wang

A silicon nanoporous pillar array (Si-NPA) is a silicon hierarchical structure with regularly patterned surface morphology. An array of bundled ZnO nanorods was grown based on Si-NPA by a catalyst-free thermal evaporation method. The morphology of ZnO/Si-NPA was found to be greatly affected by the growth parameters such as the grown temperature and the ratio nitrogen and oxygen. The room-temperature photoluminescence (PL) spectrum of ZnO/Si-NPA showed a violet emission at ∼410 nm and a blue-green emission around 500 nm, which were attributed to the PL of Si-NPA substrate and oxygen vacancies of ZnO, respectively. The results indicated that ZnO/Si-NPA is a promising optical material.


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