scholarly journals Review of Nanosheet Transistors Technology

2021 ◽  
Vol 28 (1) ◽  
pp. 40-48
Author(s):  
Firas Agha ◽  
Yasir Naif ◽  
Mohammed Shakib
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Nano Structure ◽  
New Device ◽  
Technology Node ◽  
Structure Of Metal ◽  
Effect Transistor

Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a review of this new nano-structure of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), this new device that consists of a metal gate material. Lateral nano-sheet FET is now targeting for 3nm Complementary MOS (CMOS) technology node. In this review, the structure and characteristics of Nano-Sheet FET (NSFET), FinFET and NanoWire FET (NWFET) under 5nm technology node are presented and compared. According to the comparison, the NSFET shows to be more impregnable to mismatch in ON current than NWFET. Furthermore, as comparing with other nanodimensional transistors, the NSFET has the superior control of gate all-around structures, also the NWFET realize lower mismatch in sub threshold slope (SS) and drain induced barrier lowering (DIBL).

scholarly journals CMOS-Based Physically Unclonable Functions: A Review and Tutorial

2021 ◽  
Author(s):  
Kamal Y. Kamal ◽  
Radu Muresan ◽  
Arafat Al-Dweik
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Physically Unclonable Functions ◽  
Effect Transistor

<p>This article reviews complementary metal-oxide-semiconductor (CMOS) based physically unclonable functions (PUFs) in terms of types, structures, metrics, and challenges. The article reviews and classifies the most basic PUF types. The article reviews the basic variations originated during a metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process. Random <a>variations</a> at transistor level lead to acquiring unique properties for electronic chips. These variations help a PUF system to generate a unique response. This article discusses various concepts which allow for more variations at CMOS technology, layout, masking, and design levels. It also discusses various PUF related topics.</p>

scholarly journals Optimization of Line-Tunneling Type L-Shaped Tunnel Field-Effect-Transistor for Steep Subthreshold Slope

Electronics ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 275 ◽  
Author(s):  
Faraz Najam ◽  
Yun Yu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Corner Effect ◽  
New Device ◽  
Optimum Configuration ◽  
Effect Transistor ◽  
Dual Material

The L-shaped tunneling field-effect-transistor (LTFET) has been recently introduced to overcome the thermal subthreshold limit of conventional metal-oxide-semiconductor field-effect-transistors (MOSFET). In this work, the shortcomings of the LTFET was investigated. It was found that the corner effect present in the LTFET effectively degrades its subthreshold slope. To avoid the corner effect, a new type of device with dual material gates is presented. The new device, termed the dual-gate (DG) LTEFT (DG-LTFET), avoids the corner effect and results in a significantly improved subthreshold slope of less than 10 mV/dec, and an improved ON/OFF current ratio over the LTFET. The DG-LTFET was evaluated for different device parameters and bench-marked against the LTFET. This work presents the optimum configuration of the DG-LTFET in terms of device dimensions and doping levels to determine the best subthreshold, ON current, and ambipolar performance.

scholarly journals Recent Advances of Field-Effect Transistor Technology for Infectious Diseases

Biosensors ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 103
Author(s):  
Abbas Panahi ◽  
Deniz Sadighbayan ◽  
Saghi Forouhi ◽  
Ebrahim Ghafar-Zadeh
Keyword(s):  
Infectious Diseases ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Limit Of Detection ◽  
Point Of Care ◽  
High Sensitivity ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Label Free ◽  
Effect Transistor

Field-effect transistor (FET) biosensors have been intensively researched toward label-free biomolecule sensing for different disease screening applications. High sensitivity, incredible miniaturization capability, promising extremely low minimum limit of detection (LoD) at the molecular level, integration with complementary metal oxide semiconductor (CMOS) technology and last but not least label-free operation were amongst the predominant motives for highlighting these sensors in the biosensor community. Although there are various diseases targeted by FET sensors for detection, infectious diseases are still the most demanding sector that needs higher precision in detection and integration for the realization of the diagnosis at the point of care (PoC). The COVID-19 pandemic, nevertheless, was an example of the escalated situation in terms of worldwide desperate need for fast, specific and reliable home test PoC devices for the timely screening of huge numbers of people to restrict the disease from further spread. This need spawned a wave of innovative approaches for early detection of COVID-19 antibodies in human swab or blood amongst which the FET biosensing gained much more attention due to their extraordinary LoD down to femtomolar (fM) with the comparatively faster response time. As the FET sensors are promising novel PoC devices with application in early diagnosis of various diseases and especially infectious diseases, in this research, we have reviewed the recent progress on developing FET sensors for infectious diseases diagnosis accompanied with a thorough discussion on the structure of Chem/BioFET sensors and the readout circuitry for output signal processing. This approach would help engineers and biologists to gain enough knowledge to initiate their design for accelerated innovations in response to the need for more efficient management of infectious diseases like COVID-19.

scholarly journals CMOS-Based Physically Unclonable Functions: A Review and Tutorial

2021 ◽  
Author(s):  
Kamal Y. Kamal ◽  
Radu Muresan ◽  
Arafat Al-Dweik
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Physically Unclonable Functions ◽  
Effect Transistor

<p>This article reviews complementary metal-oxide-semiconductor (CMOS) based physically unclonable functions (PUFs) in terms of types, structures, metrics, and challenges. The article reviews and classifies the most basic PUF types. The article reviews the basic variations originated during a metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process. Random <a>variations</a> at transistor level lead to acquiring unique properties for electronic chips. These variations help a PUF system to generate a unique response. This article discusses various concepts which allow for more variations at CMOS technology, layout, masking, and design levels. It also discusses various PUF related topics.</p>

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