scholarly journals Optimization of Line-Tunneling Type L-Shaped Tunnel Field-Effect-Transistor for Steep Subthreshold Slope

Electronics ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 275 ◽  
Author(s):  
Faraz Najam ◽  
Yun Yu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Corner Effect ◽  
New Device ◽  
Optimum Configuration ◽  
Effect Transistor ◽  
Dual Material

The L-shaped tunneling field-effect-transistor (LTFET) has been recently introduced to overcome the thermal subthreshold limit of conventional metal-oxide-semiconductor field-effect-transistors (MOSFET). In this work, the shortcomings of the LTFET was investigated. It was found that the corner effect present in the LTFET effectively degrades its subthreshold slope. To avoid the corner effect, a new type of device with dual material gates is presented. The new device, termed the dual-gate (DG) LTEFT (DG-LTFET), avoids the corner effect and results in a significantly improved subthreshold slope of less than 10 mV/dec, and an improved ON/OFF current ratio over the LTFET. The DG-LTFET was evaluated for different device parameters and bench-marked against the LTFET. This work presents the optimum configuration of the DG-LTFET in terms of device dimensions and doping levels to determine the best subthreshold, ON current, and ambipolar performance.

scholarly journals Optimization of Line-Tunneling Type L-Shaped Tunnel Field-Effect-Transistor for Steep Subthreshold Slope

2018 ◽  
Author(s):  
Faraz Najam ◽  
Yun Seop Yu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Corner Effect ◽  
New Device ◽  
Optimum Configuration ◽  
Effect Transistor ◽  
Dual Material

Recently L-shaped tunneling field-effect-transistor (LTFET) has been introduced to overcome the thermal subthreshold limit of conventional metal-oxide-semiconductor field-effect-transistors (MOSFET). In this work, shortcoming of LTFET was investigated. It was found that corner effect present in LTFET effectively degrades its subthreshold slope. To get rid of corner effect a new type of device with dual material gates is presented. The new device termed as DG-LTFET gets rid of the corner effect and results in a significantly improved subthreshold slope of less than 10 mV/dec, and an improved ON/OFF current ratio over LTFET. In this work DG-LTFET was evaluated for different device parameters, and bench-marked against LTFET. This work presents an optimum configuration of DG-LTFET in terms of device dimensions and doping levels, to get the best subthreshold, ON current and ambipolar performance from the DG-LTFET.

Design of Pentacene-Based Organic Field-Effect Transistor for Low-Frequency Operational Transconductance Amplifier

2020 ◽  
Vol 29 (11) ◽  
pp. 2050181
Author(s):  
Cross T. Asha Wise ◽  
G. R. Suresh ◽  
M. Palanivelen ◽  
S. Saraswathi
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Low Frequency ◽  
Oxide Semiconductor ◽  
Operational Transconductance Amplifier ◽  
Text Type ◽  
Transconductance Amplifier ◽  
Effect Transistor

Mounting electronics circuits on a plastic flexible substrate are pertinent for biosensing applications due to their resilient nature, minimal processing conditions, lightweight and low cost. Organic Field-Effect Transistors (OFET)-based amplifier for flexible biosensors have been proposed in this paper. To design flexible biosensing circuits, Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with Polycyclic Hydrocarbon is a suitable choice. It is a big challenge to build an organic circuit using graphene electrode due to its poor performance of [Formula: see text]-type OFET, therefore it is advisable to use Pentacene as [Formula: see text]- and [Formula: see text]-type Organic semiconductors. Pentacene being one among the foremost totally investigated conjugated organic molecules with a high application potential because the hole mobility in OFETs goes up to 0.2[Formula: see text]cm2/(Vs), which exceeds that of amorphous silicon. In biosignal process, the first and most important step is to amplify the biosignal for further processing. Operational Transconductance Amplifier (OTA) plays an essential role in biological signal measuring instruments like EEG, ECG, EMG modules which measure the heart, muscle and brain activities. The OTA designed using this OFET is adaptable for flexible sensor circuits and also it derives the transconductance of 67 which is similar to silicon OTA. The amplifier designed here gives unit gain of 42[Formula: see text]dB with a frequency of 195[Formula: see text]Hz which is suitable for low-frequency biosignal processing applications.

scholarly journals Subthreshold Characteristics of a Metal-Oxide–Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 673
Author(s):  
Jing-Jenn Lin ◽  
Ji-Hua Tao ◽  
You-Lin Wu
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Ferroelectric Capacitor ◽  
In Series ◽  
Effect Transistor

An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (MOSFET), drain current (ID)–drain voltage (VD) characteristics and drain current (ID)–gate voltage (VG) characteristics were measured. In addition, the subthreshold slopes of the MOSFET were determined from the ID–VG curves. It was found that the subthreshold slope could be effectively reduced by 23% of its original value when the PVDF capacitor was added to the gate of the MOSFET.

scholarly journals Review of Nanosheet Transistors Technology

2021 ◽  
Vol 28 (1) ◽  
pp. 40-48
Author(s):  
Firas Agha ◽  
Yasir Naif ◽  
Mohammed Shakib
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Nano Structure ◽  
New Device ◽  
Technology Node ◽  
Structure Of Metal ◽  
Effect Transistor

Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a review of this new nano-structure of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), this new device that consists of a metal gate material. Lateral nano-sheet FET is now targeting for 3nm Complementary MOS (CMOS) technology node. In this review, the structure and characteristics of Nano-Sheet FET (NSFET), FinFET and NanoWire FET (NWFET) under 5nm technology node are presented and compared. According to the comparison, the NSFET shows to be more impregnable to mismatch in ON current than NWFET. Furthermore, as comparing with other nanodimensional transistors, the NSFET has the superior control of gate all-around structures, also the NWFET realize lower mismatch in sub threshold slope (SS) and drain induced barrier lowering (DIBL).

Boosting on Current Using Various Source Material for Dual Gate Tunnel Field Effect Transistor

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Priyadarshini N D ◽  
Nayana G H ◽  
P Vimala
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Source Material ◽  
Oxide Semiconductor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Dual Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Tunnel Field Effect Transistors (TFET) have demonstrated to have likely applications in the cutting-edge low force and super low force semiconductors to substitute the conventional FETs. TFET will be able to provide steep inverse subthreshold swing slope also maintaining a low leakage current, making it an essential structure for limiting the power consumption in Metal Oxide Semiconductor FETs.In this paper, we are simulating different structures of TFET by varying source material to boost the ON current of the device. The different models are designed and simulated using Silvaco TCAD simulator and transfer characteristics are studied.

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