A FLEXIBLE APPROACH TO SIMULATE ELECTROFORMING AND RESISTIVE SWITCHING IN METAL OXIDE MEMRISTIVE DEVICES CONTAINING FILAMENTS
2020 ◽
An original model of resistive switching of metal oxide memristive devices is proposed. The efficiency and flexibility of the approach are demonstrated by the example of experimentally realized Au/oxide/TiN structures.
2012 ◽
Vol 33
(10)
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pp. 1405-1407
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2010 ◽
Vol 44
(2)
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pp. 025103
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2015 ◽
Vol 1
(8)
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pp. 1500061
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Keyword(s):
2014 ◽
Vol 14
(11)
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pp. 8201-8204
Keyword(s):