High Sensitive O2 Transducer by Gallium Oxide Thin Film

Author(s):  
K.F. Yarn
2020 ◽  
Vol 59 (2) ◽  
pp. 025503 ◽  
Author(s):  
Yuta Arata ◽  
Hiroyuki Nishinaka ◽  
Daisuke Tahara ◽  
Masahiro Yoshimoto

2010 ◽  
Vol 31 (4) ◽  
pp. 314-316 ◽  
Author(s):  
B.R. McFarlane ◽  
P. Kurahashi ◽  
D.P. Heineck ◽  
R.E. Presley ◽  
E. Sundholm ◽  
...  

2006 ◽  
Vol 50 (3) ◽  
pp. 500-503 ◽  
Author(s):  
R.E. Presley ◽  
D. Hong ◽  
H.Q. Chiang ◽  
C.M. Hung ◽  
R.L. Hoffman ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (11) ◽  
pp. 8964-8970 ◽  
Author(s):  
Chiharu Kura ◽  
Yoshitaka Aoki ◽  
Etsushi Tsuji ◽  
Hiroki Habazaki ◽  
Manfred Martin

Resistive switching gallium oxide thin films with tailored oxygen deficiency and gallium valence state were fabricated by rf cosputtering of Ga2O3 and Cr.


Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4956
Author(s):  
Yu-Li Hsieh ◽  
Liann-Be Chang ◽  
Ming-Jer Jeng ◽  
Chung-Yi Li ◽  
Chien-Fu Shih ◽  
...  

Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga2O3) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.


RSC Advances ◽  
2020 ◽  
Vol 10 (17) ◽  
pp. 9902-9906 ◽  
Author(s):  
Kuan-Yu Chen ◽  
Chih-Chiang Yang ◽  
Chun-Yuan Huang ◽  
Yan-Kuin Su

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.


2003 ◽  
Vol 212-213 ◽  
pp. 397-401 ◽  
Author(s):  
M Ogita ◽  
S Yuasa ◽  
K Kobayashi ◽  
Y Yamada ◽  
Y Nakanishi ◽  
...  

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