MOCVD Growth and Annealing of Gallium Oxide Thin Film and Its Structural Characterization

2005 ◽  
pp. 3377-3380
Author(s):  
Hyoun Woo Kim ◽  
Nam Ho Kim
Keyword(s):  
Thin Film ◽  
Structural Characterization ◽  
Gallium Oxide ◽  
Oxide Thin Film ◽  
Mocvd Growth

MOCVD Growth and Annealing of Gallium Oxide Thin Film and Its Structural Characterization

2005 ◽  
Vol 475-479 ◽  
pp. 3377-3380 ◽  
Author(s):  
Hyoun Woo Kim ◽  
Nam Ho Kim
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thin Film ◽  
Mocvd Growth ◽  
Afm Analysis ◽  
Metalorganic Chemical

We have demonstrated the production of gallium oxide thin films on various substrates such as Si(111), SiO2, and sapphire by metalorganic chemical vapor deposition using the trimethylgallium (TMGa) as a precursor in the presence of oxygen. The XRD data revealed that the as-deposited gallium oxide films were fully amorphous but very small crystallites with monoclinic structures were found with the thermal annealing at a sufficiently high temperature, regardless of substrate materials. The AFM analysis indicated that the surface roughness increased by the thermal annealing.

van der Waals epitaxy of ferroelectric ε-gallium oxide thin film on flexible synthetic mica

2020 ◽  
Vol 59 (2) ◽  
pp. 025503 ◽  
Author(s):  
Yuta Arata ◽  
Hiroyuki Nishinaka ◽  
Daisuke Tahara ◽  
Masahiro Yoshimoto
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Van Der Waals ◽  
Oxide Thin Film ◽  
Synthetic Mica

AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors

2010 ◽  
Vol 31 (4) ◽  
pp. 314-316 ◽  
Author(s):  
B.R. McFarlane ◽  
P. Kurahashi ◽  
D.P. Heineck ◽  
R.E. Presley ◽  
E. Sundholm ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gallium Oxide ◽  
Oxide Thin Film ◽  
Indium Gallium

Transparent ring oscillator based on indium gallium oxide thin-film transistors

2006 ◽  
Vol 50 (3) ◽  
pp. 500-503 ◽  
Author(s):  
R.E. Presley ◽  
D. Hong ◽  
H.Q. Chiang ◽  
C.M. Hung ◽  
R.L. Hoffman ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gallium Oxide ◽  
Ring Oscillator ◽  
Oxide Thin Film ◽  
Indium Gallium

Fabrication of a resistive switching gallium oxide thin film with a tailored gallium valence state and oxygen deficiency by rf cosputtering process

RSC Advances ◽  
2016 ◽  
Vol 6 (11) ◽  
pp. 8964-8970 ◽  
Author(s):  
Chiharu Kura ◽  
Yoshitaka Aoki ◽  
Etsushi Tsuji ◽  
Hiroki Habazaki ◽  
Manfred Martin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Valence State ◽  
Gallium Oxide ◽  
Oxygen Deficiency ◽  
Oxide Thin Film ◽  
Oxide Thin Films

Resistive switching gallium oxide thin films with tailored oxygen deficiency and gallium valence state were fabricated by rf cosputtering of Ga2O3 and Cr.

scholarly journals Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4956
Author(s):  
Yu-Li Hsieh ◽  
Liann-Be Chang ◽  
Ming-Jer Jeng ◽  
Chung-Yi Li ◽  
Chien-Fu Shih ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Gallium Oxide ◽  
Schottky Contact ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Metal Semiconductor Metal ◽  
Ga2o3 Thin Film ◽  
Capacitance Characteristics ◽  
Contact Electrode

Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga2O3) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.

scholarly journals ALD Al2O3 gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT

RSC Advances ◽  
2020 ◽  
Vol 10 (17) ◽  
pp. 9902-9906 ◽  
Author(s):  
Kuan-Yu Chen ◽  
Chih-Chiang Yang ◽  
Chun-Yuan Huang ◽  
Yan-Kuin Su
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Trap Density ◽  
Oxide Thin Film ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Indium Gallium ◽  
Al2o3 Gate Dielectric

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.

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