scholarly journals Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4956
Author(s):  
Yu-Li Hsieh ◽  
Liann-Be Chang ◽  
Ming-Jer Jeng ◽  
Chung-Yi Li ◽  
Chien-Fu Shih ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Gallium Oxide ◽  
Schottky Contact ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Metal Semiconductor Metal ◽  
Ga2o3 Thin Film ◽  
Capacitance Characteristics ◽  
Contact Electrode

Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga2O3) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.

scholarly journals Dynamics Contributions to the Growth Mechanism of Ga2O3 Thin Film and NWs Enabled by Ag Catalyst

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1272 ◽  
Author(s):  
Alhalaili ◽  
Bunk ◽  
Vidu ◽  
Islam
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Growth Parameters ◽  
Oxide Thin Film ◽  
Scale Production ◽  
Nanocrystalline Thin Film ◽  
Ga2o3 Thin Film ◽  
Nano Sensors ◽  
Ag Catalyst

In the last few years, interest in the use of gallium oxide (Ga2O3) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for applications in harsh environments. In this work, we explored the effect of Ag thin film as a catalyst to grow gallium oxide. The growth of gallium oxide thin film and nanowires can be achieved by heating and oxidizing pure gallium at high temperatures (~1000 °C) in the presence of trace amounts of oxygen. We present the results of structural, morphological, and elemental characterization of the β-Ga2O3 thin film and nanowires. In addition, we explore and compare the sensing properties of the β-Ga2O3 thin film and nanowires for UV detection. The proposed process can be optimized to a high scale production Ga2O3 nanocrystalline thin film and nanowires. By using Ag thin film as a catalyst, we can control the growth parameters to obtain either nanocrystalline thin film or nanowires.

Solution-Processed Oxide Thin Film Transistors with Indium Zinc Tin Oxide Semiconductor: Nitrogen Effect

2019 ◽  
Vol 33 (5) ◽  
pp. 295-299 ◽  
Author(s):  
Bong-Jin Kim ◽  
Hyung-Jun Kim ◽  
Sung Mok Jung ◽  
Tae-Sik Yoon ◽  
Yong-Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Nitrogen Effect ◽  
Zinc Tin Oxide

van der Waals epitaxy of ferroelectric ε-gallium oxide thin film on flexible synthetic mica

2020 ◽  
Vol 59 (2) ◽  
pp. 025503 ◽  
Author(s):  
Yuta Arata ◽  
Hiroyuki Nishinaka ◽  
Daisuke Tahara ◽  
Masahiro Yoshimoto
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Van Der Waals ◽  
Oxide Thin Film ◽  
Synthetic Mica

AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors

2010 ◽  
Vol 31 (4) ◽  
pp. 314-316 ◽  
Author(s):  
B.R. McFarlane ◽  
P. Kurahashi ◽  
D.P. Heineck ◽  
R.E. Presley ◽  
E. Sundholm ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gallium Oxide ◽  
Oxide Thin Film ◽  
Indium Gallium

Transparent ring oscillator based on indium gallium oxide thin-film transistors

2006 ◽  
Vol 50 (3) ◽  
pp. 500-503 ◽  
Author(s):  
R.E. Presley ◽  
D. Hong ◽  
H.Q. Chiang ◽  
C.M. Hung ◽  
R.L. Hoffman ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gallium Oxide ◽  
Ring Oscillator ◽  
Oxide Thin Film ◽  
Indium Gallium

High Performance Zinc Oxide Thin Film Transistors Through Improved Material Processing and Device Design

2014 ◽  
Author(s):  
Ahmad Hossein Adl ◽  
Samira Farsinezhad ◽  
Alex Ma ◽  
Douglas W. Barlage ◽  
Karthik Shankar
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Schottky Contact ◽  
Depletion Region ◽  
Charge Carriers ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Poor Control ◽  
High Throughput Method

Solution processing (SP) is a cheap, simple and high-throughput method for the fabrication of ZnO thin film transistors (TFTs). Lack of enhancement mode operation, poor crystallinity, traps, and poor control of the carrier concentration are some of the disadvantages of this method. The high intrinsic electron concentration of SP-ZnO makes saturation of TFTs non-trivial. We report on Schottky barrier thin film transistors (SB-TFT). By biasing the source Schottky contact in reverse bias, a depletion region is formed around the source contact hence depleting the region from the free charge carriers which produces the saturation of the device. The effect of the Schottky contact is illustrated by comparing the operation of SB-TFTs with that of conventional TFTs.

Sign in / Sign up

Export Citation Format

Share Document