Effects of Vapor CdCl2 Treatment on the Properties of CdS Thin Films Prepared by R.F. Magnetron Sputtering

2011 ◽  
Vol 347-353 ◽  
pp. 3477-3480
Author(s):  
Liang Min Cai ◽  
Jian Huang ◽  
Jia Wei Jiang ◽  
Jun Le ◽  
Wei Min Shi ◽  
...  

CdS films were prepared by R.F. magnetron sputtering method. The effects of vapor CdCl2treatment on the properties of CdS films were studied. The vapor CdCl2thermal treatment at different temperature was employed in a CSS device, using CdCl2powder as evaporant. The structural and optical properties of CdS films were investigated by x-ray diffraction (XRD), PL spectra, and transmittance spectra, respectively. The results revealed that the CdS films had a structure of hexagonal wurtzite with a preferential orientation of the (002) plane. A better crystal quality and larger grain size, which are good for the solar cell application, were observed in the CdS samples annealed with CdCl2Subscript text.

2011 ◽  
Vol 306-307 ◽  
pp. 265-268
Author(s):  
Xue Yan Zhang ◽  
Xiao Yu Liu ◽  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
...  

Cadmium sulfide (CdS) thin films with (111) preferential orientation were grown on glass substrates at room temperature by radio frequency (R.F.) magnetron sputtering. The structural and optical properties of CdS films have been investigated by X-ray diffraction, Scanning Electron Microscope micrographs, PL spectra and transmittance spectra. The grain sizes have been evaluated. The transmission spectra of the obtained films reveal a relatively high transmission coefficient (80%) in the visible range. All these results show that the grain sizes increased while the optical band gap decreased with increasing the thickness of CdS films.


2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.


1996 ◽  
Vol 426 ◽  
Author(s):  
Yuming Zhu ◽  
Dull Mao ◽  
D. L. Williamson ◽  
J. U. Trefny

AbstractChemical-bath-deposited CdS thin films from an ammonia-thiourea solution have been studied by x-ray diffraction, surface profilometry, ellipsometry, and other techniques. The compactness of the CdS films, structural properties of the films, and the growth mechanism have been investigated. For the deposition conditions used, we found that the film compactness reaches its maximum at a deposition time of 35 minutes. Films grown at longer deposition times are less compact, consistent with the CdS duplex layer structure proposed previously. This transition from compact layer growth to porous layer growth is important for depositing CdS films in solar cell applications. Based on x-ray diffraction (XRD) studies, we were able to determine the crystal phase, lattice constant, and other structural properties.


2019 ◽  
Vol 397 ◽  
pp. 81-87 ◽  
Author(s):  
Farid Khediri ◽  
Abdelkader Hafdallah ◽  
Mouna Bouhelal

In this work Zinc oxide thin films prepared by spray pyrolysis technique. A set of ZnO thin films were deposited with various deposition times, on glass substrate at 350 °C. The precursor solution is formed with zinc acetate in distilled methanol with 0.1 molarity. The deposition time was ranged from 2 to 8 min. The structural and optical properties of those films were examined by X-ray diffraction (XRD) and ultraviolet-visible spectrometer (UV). X-ray diffraction patterns of the ZnO thin films showed polycrystalline hexagonal wurtzite structure and the preferred orientation was along (002) plane when the grain size varied between 9.66 and 16.67nm. ZnO thin films were highly transparent in the visible with the maximum transmittance of 85% and the optical band gap was found between 3.25 and 3.28 eV.


2015 ◽  
Vol 1132 ◽  
pp. 217-223
Author(s):  
E.R. Rwenyagila ◽  
B. Agyei-Tuffour ◽  
M.G.Z. Kana ◽  
O. Akin-Ojo ◽  
W.O. Soboyejo

This work examines the modification of the structural and optical properties of ZnO thin films by control of deposition and post-treatment parameters. ZnO thin films were deposited by RF magnetron sputtering from a ceramic target locally made at SHESTCO in Abuja, Nigeria. X-ray diffraction measurements characterized the different films prior to thermal annealing as extremely amorphous with average UV-VIS transmittance spectra between 80 and 90%. Annealing at different temperatures and time spans influenced the formation of Wurtzite (002) oriented ZnO crystallites. Contrary to the crystallinity of the films, which was strongly influenced by the deposition power, the optical transmission of the films was only slightly influenced by the deposition power and it was less sensitive to the crystallinity of ZnO thin films.


2008 ◽  
Vol 5 (3) ◽  
pp. 387-390
Author(s):  
Baghdad Science Journal

In this research study the effect of irradiation by (CW) CO2 laser on some optical properties of (Cds) doping by Ni thin films of (1)µm thickness has been prepared by heat evaporation method. (X-Ray) diffraction technique showed the prepared films before and after irradiation are ploy crystalline hexagonal structure, optical properties were include recording of absorbance spectra for prepared films in the range of (400-1000) nm wave lengths, the absorption coefficient and the energy gap were calculated before and after irradiation, finally the irradiation affected (CdS) thin films by changing its color from the Transparent yellow to dark rough yellow and decrease the value absorption coefficient also increase the value of energy gap.


2020 ◽  
Vol 307 ◽  
pp. 01033
Author(s):  
Asmaa Mrigal ◽  
Lahocine El Gana ◽  
Mouhamed Addou ◽  
Khadija Bahedi ◽  
Rajae Temsamani ◽  
...  

In this work, the effect of substrate temperature on structural and optical properties of V2O5 thin films has been characterized by X-ray diffraction (XRD); SEM and transmission. The films mince has been prepared by Reactive Chemical Spraying technology in Liquid Phase (RCSLP) on glass substrates preheated at (350, 400, 450 and 500 °C). The X-ray diffraction analysis confirms that all layers are polycrystalline, and the preferred orientation of V2O5 is the (001) plane. The morphology of V2O5 thin films are porous nature and their particle’s shape is three-dimensional. The transmittance and absorbance of thin film were measured from which the optical constants (Energy gap, Refractive index, Absorption coefficient, Extinction coefficient and Optical dielectric constant) were determined.


2018 ◽  
Vol 7 (4.36) ◽  
pp. 296 ◽  
Author(s):  
Farah J.Hamood ◽  
Qunoot M.hadi ◽  
Khalid Haneen Abass ◽  
Musaab Khudhur Mohammed

Thermal evaporation method have been used to prepared thin films from tin sulfide (SnS) doping with 20 nm particle size of silver (Ag) at room temperature, under pressure up to 1 × 10-7 mbar with rate of statement 0.5 nm. sec-1. The SnS:Ag thin films deposited on glass substrate at different annealing temperature (as-deposited, 423, 473, 573 and 623 K) for 2 hours. The effect of annealing treatment on the structural and optical properties has been studied. From X- ray diffraction (XRD) examination, predominant peak (111) appears at annealing temperature 623 K, also the others as (101) and (002). Scherer’s formula used to calculate the crystallite size that ranged from 3-7 nm. Using UV-Vis spectrophotometer to recording the transmittance spectra and then calculate the optical properties in the wavelength range 300-900 nm. The absorbance decreased with the increasing of annealing temperature, while the transmittance increased. The optical constants such as refractive index, extinction coefficient, real and imaginary parts of dielectric constant, and absorption coefficient decreased with the increasing of annealing temperature. The energy band gap increased from 2.1 eV for the as- deposited film to 3.3 eV for the film annealed at 623 K.   


2013 ◽  
Vol 537 ◽  
pp. 224-228
Author(s):  
Yi Liu ◽  
Hong Mo Huang ◽  
Xiao Dong Lin

TiO2 thin films were prepared on quartz glasses by pulsed laser deposition (PLD) using a KrF laser excimer. The crystalline structure was characterized by X-ray diffraction, and the optical properties of the films were investigated using spectroscopic ellipsometry and UV-vis spectra respectively. The effects of the PLD conditions, including substrate temperature and O2 pressure on the crystalline structure and the optical properties of the films were investigated. The results indicated that there are a suitable substrate temperature and an O2 pressure which is favorable for the synthesis of anatase-type TiO2.


2014 ◽  
Vol 938 ◽  
pp. 103-107
Author(s):  
V. Gowthami ◽  
M. Meenakshi ◽  
N. Anandhan ◽  
Chinnappanadar Sanjeeviraja

Nickel oxide has been widely used as material for antiferromagnetic, electrochromic display and functional layer for chemical sensors. Nickel oxide thin films of various molarities were deposited using a simple nebulizer technique and the substrate temperature was fixed at 350C. The effect of the molarity of precursor solution on structural and optical properties was studied using X-ray diffraction (XRD) and UV-Vis-NIR spectrometer techniques respectively. The band gap of the material was confirmed by photoluminescence spectrometer. It is found that increase in the molarity of 10ml volume of the sprayed solution leads to the increasing in film thickness. X-ray diffraction studies indicated cubic structure and the crystallites are preferentially oriented along (1 1 1) plane. It is also found that as the concentration of the solution increases the transmittance decreases, consequently the band-gap energy wanes from 4.0 eV to 3.2 eV.


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