Couple Passive Voltage Contrast with Scanning Probe Microscope to Identify Invisible Implant Issue

2005 ◽  
Author(s):  
Cha-Ming Shen ◽  
Shi-Chen Lin ◽  
Chen-May Huang ◽  
Huay-Xan Lin ◽  
Chi-Hong Wang
Keyword(s):  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Defect Mode ◽  
Scanning Probe ◽  
Electrical Characteristics ◽  
Differential Analysis ◽  
Probe Microscope ◽  
Compound Method ◽  
Voltage Contrast

Abstract This paper presents a judicious reasoning method by coupling passive voltage contrast (PVC) with scanning probe microscopy (SPM) for revealing particular invisible defect modes, which were imperceptible to observe and very difficult to identify by means of traditional physical failure analysis techniques. In order to certify this compound method, it is applied to an implant issue as a case study. Through solving this particular defect mode, whose exact failure position could not be determined even with the most sensitive PVC or high-resolution SPM current mapping, the procedures and contentions are illustrated further. The significance of the reasoning method is based on electrical characterization and differential analysis. By coupling PVC with SPM, the capability to identify tiny defects is not limited to just distinguishing leakage or high-resistance under contacts. PVC can detect abnormal N+ contacts due to improper implanting, and SPM can provide the precise electrical characteristics.

A Study of the Photoelectric Effect Caused by a Laser Beam Used in a Beam Bounce Technique in a C-AFM System

2008 ◽  
Author(s):  
Hung-Sung Lin ◽  
Mong-Sheng Wu
Keyword(s):  
Laser Beam ◽  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Photoelectric Effect ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Electrical Characteristics ◽  
Atomic Force ◽  
Probe Microscope ◽  
Probe Head

Abstract The use of a scanning probe microscope (SPM), such as a conductive atomic force microscope (C-AFM) has been widely reported as a method of failure analysis in nanometer scale science and technology [1-6]. A beam bounce technique is usually used to enable the probe head to measure extremely small movements of the cantilever as it is moved across the surface of the sample. However, the laser beam used for a beam bounce also gives rise to the photoelectric effect while we are measuring the electrical characteristics of a device, such as a pn junction. In this paper, the photocurrent for a device caused by photon illumination was quantitatively evaluated. In addition, this paper also presents an example of an application of the C-AFM as a tool for the failure analysis of trap defects by taking advantage of the photoelectric effect.

SCANNING PROBE MICROSCOPY BASED NANOSCALE PATTERNING AND FABRICATION

COSMOS ◽  
2007 ◽  
Vol 03 (01) ◽  
pp. 1-21 ◽  
Author(s):  
XIAN NING XIE ◽  
HONG JING CHUNG ◽  
ANDREW THYE SHEN WEE
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Nanoscale Patterning ◽  
Atomic Force ◽  
Probe Microscope ◽  
Molecular Manipulation

Nanotechnology is vital to the fabrication of integrated circuits, memory devices, display units, biochips and biosensors. Scanning probe microscope (SPM) has emerged to be a unique tool for materials structuring and patterning with atomic and molecular resolution. SPM includes scanning tunneling microscopy (STM) and atomic force microscopy (AFM). In this chapter, we selectively discuss the atomic and molecular manipulation capabilities of STM nanolithography. As for AFM nanolithography, we focus on those nanopatterning techniques involving water and/or air when operated in ambient. The typical methods, mechanisms and applications of selected SPM nanolithographic techniques in nanoscale structuring and fabrication are reviewed.

scholarly journals The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

2012 ◽  
Vol 3 ◽  
pp. 722-730 ◽  
Author(s):  
César Moreno ◽  
Carmen Munuera ◽  
Xavier Obradors ◽  
Carmen Ocal
Keyword(s):  
Memory Effect ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Versatile Tool ◽  
Scanning Force ◽  
Memristor Device

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.

scholarly journals Research of the Possibility of Applying Nanomarking on Steel Surfaces with a Scanning Probe Microscope

2020 ◽  
pp. 44-49
Author(s):  
Tatyana Kislova
Keyword(s):  
Spatial Resolution ◽  
Scanning Probe Microscopy ◽  
Metal Layer ◽  
Scanning Probe ◽  
Micro Milling ◽  
Innovative Technology ◽  
Probe Microscope ◽  
Metal Products ◽  
Steel Surfaces ◽  
Counterfeit Products

Recently, an increasing number of products are subject to protective labeling-application of digital and letter designations, barcodes that individualize the product. This has become especially relevant with the release of counterfeit products and mass theft of vehicles. The number usually individualizes a specific instance of the product. In the case of manufacturing cars, weapons, and precious items, this makes it possible to register and strictly account for these items. Marking numbers can be applied directly to the material they are made of, or to attached metal or polymer plates. Marking symbols are applied in various ways. They are applied to steel products by stamping, micro-milling or laser engraving. As expert practice shows, such markings on metal products are either completely removed by milling, cutting or sawing the metal layer with various tools and devices, or changed, or new markings are applied to the place of destroyed marks. The paper studies the possibility of creating protective markings of the nanometer level of spatial resolution on steel products of different hardness using a new innovative technology-scanning probe microscopy, which provides one hundred percent verification of items and objects.

Characterization of High Resolution Resists and Metal Shims by Scanning Probe Microscopy

2000 ◽  
Vol 6 (2) ◽  
pp. 129-136 ◽  
Author(s):  
B. A. Sexton ◽  
R. J. Marnock
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Scanning Probe Microscopy ◽  
Electron Beam Lithography ◽  
Scanning Probe ◽  
Feedback Process ◽  
Probe Microscope ◽  
Etched Silicon ◽  
Micro Patterns

Technologies such as compact disc (CD) manufacturing, hologram embossing, and security printing rely on the reproduction of micro-patterns generated on surfaces by optical or electron-beam lithographic writing onto electron-beam or photoresists. The periodicity of such patterns varies from sub-micron to several microns, with depths up to 0.5 μm. The scanning probe microscope (SPM) is becoming a routine tool for analysis of these micro-patterns, to check on depths and lateral dimensions of features. Direct scanning of resist-covered plates is now possible, without damage, using resonant low-contact force SPM with etched silicon cantilevers. Metal shims produced from the master resist plates can also be scanned and checked for defects prior to production of embossed foils. The present article discusses examples of the use of a Digital Instruments 3100 microscope in analysis of production electron-beam lithography plates with a 0.5 μm resist thickness. We also examine features of nickel replicas (father and mother shims) produced by electroforming from the original plate. With SPM measurements of the development profile of a particular plate, corrections can be made to exposures and development times during production to correct errors. An example is given of such a feedback process.

scholarly journals Direct Charge Measurement in Floating Gate Transistors of Flash EEPROM Using Scanning Electron Microscopy

2016 ◽  
Author(s):  
Franck Courbon ◽  
Sergei Skorobogatov ◽  
Christopher Woods
Keyword(s):  
Scanning Probe Microscopy ◽  
Integrated Circuit ◽  
Memory Cell ◽  
Processing Technique ◽  
Floating Gate ◽  
Scanning Probe ◽  
Image Processing Technique ◽  
Data Retention ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract We present a characterization methodology for fast direct measurement of the charge accumulated on Floating Gate (FG) transistors of Flash EEPROM cells. Using a Scanning Electron Microscope (SEM) in Passive Voltage Contrast (PVC) mode we were able to distinguish between '0' and '1' bit values stored in each memory cell. Moreover, it was possible to characterize the remaining charge on the FG; thus making this technique valuable for Failure Analysis applications for data retention measurements in Flash EEPROM. The technique is at least two orders of magnitude faster than state-of-the-art Scanning Probe Microscopy (SPM) methods. Only a relatively simple backside sample preparation is necessary for accessing the FG of memory transistors. The technique presented was successfully implemented on a 0.35 μm technology node microcontroller and a 0.21 μm smart card integrated circuit. We also show the ease of such technique to cover all cells of a memory (using intrinsic features of SEM) and to automate memory cells characterization using standard image processing technique.

Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1430-1433 ◽  
Author(s):  
Alexander Hofer ◽  
Roland Biberger ◽  
Günther Benstetter ◽  
Björn Wilke ◽  
Holger Göbel
Keyword(s):  
Organic Semiconductor ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Probe ◽  
Semiconductor Films ◽  
Probe Microscopy
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