scholarly journals Direct Charge Measurement in Floating Gate Transistors of Flash EEPROM Using Scanning Electron Microscopy

2016 ◽  
Author(s):  
Franck Courbon ◽  
Sergei Skorobogatov ◽  
Christopher Woods
Keyword(s):  
Scanning Probe Microscopy ◽  
Integrated Circuit ◽  
Memory Cell ◽  
Processing Technique ◽  
Floating Gate ◽  
Scanning Probe ◽  
Image Processing Technique ◽  
Data Retention ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract We present a characterization methodology for fast direct measurement of the charge accumulated on Floating Gate (FG) transistors of Flash EEPROM cells. Using a Scanning Electron Microscope (SEM) in Passive Voltage Contrast (PVC) mode we were able to distinguish between '0' and '1' bit values stored in each memory cell. Moreover, it was possible to characterize the remaining charge on the FG; thus making this technique valuable for Failure Analysis applications for data retention measurements in Flash EEPROM. The technique is at least two orders of magnitude faster than state-of-the-art Scanning Probe Microscopy (SPM) methods. Only a relatively simple backside sample preparation is necessary for accessing the FG of memory transistors. The technique presented was successfully implemented on a 0.35 μm technology node microcontroller and a 0.21 μm smart card integrated circuit. We also show the ease of such technique to cover all cells of a memory (using intrinsic features of SEM) and to automate memory cells characterization using standard image processing technique.

A New Image Processing Technique for STEM

1974 ◽  
Vol 32 ◽  
pp. 432-433
Author(s):  
Yasushi Kokubo ◽  
Hirotami Koike ◽  
Teruo Someya
Keyword(s):  
Electron Microscopy ◽  
Image Processing ◽  
Scanning Electron Microscopy ◽  
Elastic Scattering ◽  
Field Emission ◽  
Processing Technique ◽  
Image Processing Technique ◽  
Energy Analyzer ◽  
Scanning Microscope ◽  
Scanning Electron

One of the advantages of scanning electron microscopy is the capability for processing the image contrast, i.e., the image processing technique. Crewe et al were the first to apply this technique to a field emission scanning microscope and show images of individual atoms. They obtained a contrast which depended exclusively on the atomic numbers of specimen elements (Zcontrast), by displaying the images treated with the intensity ratio of elastically scattered to inelastically scattered electrons. The elastic scattering electrons were extracted by a solid detector and inelastic scattering electrons by an energy analyzer. We noted, however, that there is a possibility of the same contrast being obtained only by using an annular-type solid detector consisting of multiple concentric detector elements.

Circuit Tracing on Integrated Circuit Using FIB Passive Voltage Contrast Effect

2015 ◽  
Author(s):  
Alexander Sorkin ◽  
Chris Pawlowicz ◽  
Alex Krechmer ◽  
Michael W. Phaneuf
Keyword(s):  
Electron Microscope ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Metal Layer ◽  
Database System ◽  
Conventional Procedure ◽  
Sem Imaging ◽  
Voltage Contrast ◽  
Scanning Electron ◽  
Graphic Database

Abstract Competitive circuit analysis of Integrated Circuits (ICs) is one of the most challenging types of analysis. It involves multiple complex IC die de-processing/de-layering steps while keeping precise planarity from metal layer to metal layer. Each step is followed by Scanning Electron Microscope (SEM) imaging together with mosaicking that subsequently passes through an image recognition and Graphic Database System (GDS) conversion process. This conventional procedure is quite time and resource consuming. The current paper discusses and demonstrates a new inventive methodology of circuit tracing on an IC using known FIB Passive Voltage Contrast (PVC) effects [1]. This technique provides significant savings in time and resources.

Failure Analysis of FinFET Circuitry at GHz Speeds Using Voltage-Contrast and Stroboscopic Techniques on a Scanning Electron Microscope

2019 ◽  
Author(s):  
James Vickers ◽  
Seema Somani ◽  
Blake Freeman ◽  
Pete Carleson ◽  
Lubomír Tùma ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Electrical Activity ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Contrast Mechanism ◽  
Voltage Contrast ◽  
Working Device ◽  
Scanning Electron

Abstract We report on using the voltage-contrast mechanism of a scanning electron microscope to probe electrical waveforms on FinFET transistors that are located within active integrated circuits. The FinFET devices are accessed from the backside of the integrated circuit, enabling electrical activity on any transistor within a working device to be probed. We demonstrate gigahertz-bandwidth probing at 10-nm resolution using a stroboscopic pulsed electron source.

scholarly journals Application of Photogrammetric 3D Reconstruction to Scanning Electron Microscopy: Considerations for Volume Analysis

2020 ◽  
Author(s):  
William D. A. Rickard ◽  
Jéssica Fernanda Ramos Coelho ◽  
Joshua Hollick ◽  
Susannah Soon ◽  
Andrew Woods
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
3D Reconstruction ◽  
Imaging Techniques ◽  
Three Dimensional ◽  
3D Models ◽  
Processing Technique ◽  
Image Processing Technique ◽  
Operating Parameters ◽  
Scanning Electron

Photogrammetric three-dimensional (3D) reconstruction is an image processing technique used to develop digital 3D models from a series of two-dimensional images. This technique is commonly applied to optical photography though it can also be applied to microscopic imaging techniques such as scanning electron microscopy (SEM). The authors propose a method for the application of photogrammetry techniques to SEM micrographs in order to develop 3D models suitable for volumetric analysis. SEM operating parameters for image acquisition are explored and the relative effects discussed. This study considered a variety of microscopic samples, differing in size, geometry and composition, and found that optimal operating parameters vary with sample geometry. Evaluation of reconstructed 3D models suggests that the quality of the models strongly determines the accuracy of the volumetric measurements obtainable. In particular, they report on volumetric results achieved from a laser ablation pit and discuss considerations for data acquisition routines.

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