Automated Defect Analysis in Solar Cells Using EBIC

2014 ◽  
Author(s):  
Grigore Moldovan ◽  
Shark Lotharukpong ◽  
Peter Wilshaw
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Dual Beam ◽  
Statistical Variations ◽  
Resolution Imaging ◽  
Electron Beam Induced Current ◽  
Key Sites

Abstract Electron Beam Induced Current (EBIC) characterization is unique in its ability to provide quantitative high-resolution imaging of electrical defects in solar cells. In particular, EBIC makes it possible to image electrical activity of single dislocations in a Dual-Beam Focused Ion Beam (FIB) Scanning Electron Microscope (SEM), to cut and lift out a micro-specimen containing a particular dislocation, and then transfer it for further structural or chemical analysis. As typical solar cell material presents a complex array of defects, it is important to observe statistical variations within a sample and select key sites for analysis. This paper describes a method for automated defect identification and characterization, and shows an application to multi-crystalline silicon (mc-Si) solar cell wafers selected from different heights along the manufactured ingot. Information presented here includes the experimental setup for data acquisition, as well as the basic algorithms used for identification and extraction of dislocation contrast.

Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 275-284 ◽  
Author(s):  
Michael Seibt ◽  
Philipp Saring ◽  
Philipp Hahne ◽  
Linda Stolze ◽  
M.A. Falkenberg ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Extended Defects ◽  
Metal Impurity ◽  
Transmission Electron ◽  
Electron Beam Induced Current

This contribution summarizes recent efforts to apply transmission electron microscopy (TEM) techniques to recombination-active extended defects present in a low density. In order to locate individual defects, electron beam induced current (EBIC) is applied in situ in a focused ion beam (FIB) machine combined with a scanning electron microscope. Using this approach defect densities down to about 10cm-2 are accessible while a target accuracy of better than 50nm is achieved. First applications described here include metal impurity related defects in multicrystalline silicon, recombination and charge collection at NiSi2 platelets, internal gettering of copper by NiSi2 precipitates and site-determination of copper atoms in NiSi2.

Failure Analysis Work Flow for Electrical Shorts in Triple Stacked 3D TSV Daisy Chains

2015 ◽  
Vol 2015 (1) ◽  
pp. 000469-000473 ◽  
Author(s):  
J. Gaudestad ◽  
A. Orozco ◽  
I. De Wolf ◽  
T. Wang ◽  
T. Webers ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Root Cause ◽  
Current Path ◽  
Dual Beam ◽  
Resolution Imaging ◽  
Magnetic Field Imaging ◽  
Non Destructive

In this paper we show an efficient workflow that combines Magnetic Field Imaging (MFI) and Dual Beam Plasma Focused Ion Beam (DB-PFIB) for fast and efficient Fault Isolation and root cause analysis in 2.5/3D devices. The work proves MFI is the best method for Electric Fault Isolation (EFI) of short failures in 2.5/3D Through Silicon Via (TSV) triple stacked devices in a true non-destructive way by imaging the current path. To confirm the failing locations and to do Physical Failure Analysis (PFA), a DB-PFIB system was used for cross sectioning and volume analysis of the TSV structures and high resolution imaging of the identified defects. With a DB-PFIB, the fault is exposed and analyzed without any sample prep artifacts seen in mechanical polishing or laser preparation techniques and done in a considerably shorter amount of time than that required when using a traditional Gallium Focused Ion Beam (FIB).

Study of the Influence of Structural Defects on Properties of Silicon Solar Cells

2013 ◽  
Vol 592-593 ◽  
pp. 449-452
Author(s):  
Jiří Šicner ◽  
Pavel Škarvada ◽  
Robert Macků ◽  
Pavel Koktavý
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Electron Microscope ◽  
Solar Cell ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ccd Camera ◽  
Structural Defects ◽  
Silicon Solar Cells

Solar cells of common sizes contains many of these defects and it is not easy to determine the influence of particular defects on the characteristics of the whole solar cell. Therefore, in our research we use samples of size of square centimeter at which we can disentangle the influence of the defect. We localize the defect by using a CCD camera, we measure the electrical, thermal and optical properties of the sample and then study it by means an electron microscope, we find the damaged structure and put it to focused ion beam. We expect the change in electrical, thermal and optical properties of the sample.

Investigation of Defects at Cu(In,Ga)Se2 Flexible Solar Cells on Macroscopic and Microscopic Level and their Influence on Solar Cell Performance

2016 ◽  
Vol 258 ◽  
pp. 469-472
Author(s):  
Pavel Škarvada ◽  
Robert Macků ◽  
Lubomir Skvarenina
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Diagnostic Methods ◽  
Solar Cell Performance ◽  
Cell Structures ◽  
Cell Layers ◽  
Localize Defect ◽  
Cigs Solar Cells

This paper investigates imperfection issues of Cu (In,Ga)Se2 thin-film solar cell structures and diagnostic methods of the CIGS solar cells. Electroluminescence and thermography are used to localize defect in macroscopic scale. Microstructures found in defective solar cell area are shown using micrographs. Focused ion beam was used to demonstrate that these structures interfere each solar cell layers. It is shown that micro sized defects (voids) behave as extra-stressed conductive channels that can degrade solar cells in module.

Hydrogen Ion Beam Passivation of Electrically Active Defects in Crystalline Silicon Solar Cells

1985 ◽  
Vol 45 ◽  
Author(s):  
Y.S. Tsuo ◽  
J.B. Milstein ◽  
R.J. Matson
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Current Data ◽  
Hydrogen Ion ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells ◽  
Ion Beam Treatment ◽  
Electron Beam Induced Current ◽  
Silicon Sheet

ABSTRACTWe have observed significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells after hydrogen ion beam passivation for a period of ten minutes or less. We have obtained electron-beam-induced current data that show the hydrogen passivation of dislocations as well as grain boundaries in edge-supportedpulling silicon sheet solar cells. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance.

Failure Analysis Work Flow for Electrical Shorts in Triple Stacked 3D TSV Daisy Chains

2014 ◽  
Author(s):  
J. Gaudestad ◽  
A. Orozco ◽  
I. De Wolf ◽  
T. Wang ◽  
T. Webers ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Root Cause ◽  
Current Path ◽  
Dual Beam ◽  
Resolution Imaging ◽  
Magnetic Field Imaging ◽  
Non Destructive

Abstract In this paper we show an efficient workflow that combines Magnetic Field Imaging (MFI) and Dual Beam Plasma Focused Ion Beam (DB-PFIB) for fast and efficient Fault Isolation and root cause analysis in 2.5/3D devices. The work proves MFI is the best method for Electric Fault Isolation (EFI) of short failures in 2.5/3D Through Silicon Via (TSV) triple stacked devices in a true non-destructive way by imaging the current path. To confirm the failing locations and to do Physical Failure Analysis (PFA), a DB-PFIB system was used for cross sectioning and volume analysis of the TSV structures and high resolution imaging of the identified defects. With a DB-PFIB, the fault is exposed and analyzed without any sample prep artifacts seen in mechanical polishing or laser preparation techniques and done in a considerably shorter amount of time than that required when using a traditional Gallium Focused Ion Beam (FIB).

FIB Enhancement of Mechanically Polished Cross-sections

2019 ◽  
Author(s):  
Becky Holdford
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Imaging ◽  
Chemical Attack ◽  
Resolution Imaging ◽  
Scanning Electron

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Manufacturing In-Line Whole Wafer Focused Ion Beam (FIB) Memory Address Descramble Verification

2008 ◽  
Author(s):  
Steven B. Herschbein ◽  
Hyoung H. Kang ◽  
Scott L. Jansen ◽  
Andrew S. Dalton
Keyword(s):  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Random Access ◽  
Cell Counting ◽  
Test Results ◽  
Laboratory Procedure ◽  
Memory Array ◽  
Dual Beam ◽  
Process Level

Abstract Test engineers and failure analyst familiar with random access memory arrays have probably encountered the frustration of dealing with address descrambling. The resulting nonsequential internal bit cell counting scheme often means that the location of the failing cell under investigation is nowhere near where it is expected to be. A logical to physical algorithm for decoding the standard library block might have been provided with the design, but is it still correct now that the array has been halved and inverted to fit the available space in a new processor chip? Off-line labs have traditionally been tasked with array layout verification. In the past, hard and soft failures could be induced on the frontside of finished product, then bitmapped to see if the sites were in agreement. As density tightened, flip-chip FIB techniques to induce a pattern of hard fails on packaged devices came into practice. While the backside FIB edit method is effective, it is complex and expensive. The installation of an in-line Dual Beam FIB created new opportunities to move FA tasks out of the lab and into the FAB. Using a new edit procedure, selected wafers have an extensive pattern of defects 'written' directly into the memory array at an early process level. Bitmapping of the RAM blocks upon wafer completion is then used to verify correlation between the physical damaged cells and the logical sites called out in the test results. This early feedback in-line methodology has worked so well that it has almost entirely displaced the complex laboratory procedure of backside FIB memory array descramble verification.

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