Non-Destructive 3D Failure Analysis Work Flow for Electrical Failure Analysis in Complex 2.5D-Based Devices Combining 3D Magnetic Field Imaging and 3D X-Ray Microscopy

2018 ◽  
Author(s):  
Antonio Orozco ◽  
Elena Talanova ◽  
Alex Jeffers ◽  
Florencia Rusli ◽  
Bernice Zee ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Semiconductor Industry ◽  
Three Dimensional ◽  
X Ray ◽  
Electrical Failure ◽  
Magnetic Field Imaging ◽  
3D Stacking ◽  
Field Imaging

Abstract Industry and market requirements keep imposing demands in terms of tighter transistor packing, die and component real estate management on the package, faster connections and expanding functionality. This has forced the semiconductor industry to look for novel packaging approaches to allow for 3D stacking of transistors (the so called “More than Moore”). This complex 3D geometry, with an abundance of opaque layers and interconnects, presents a great challenge for failure analysis (FA). Three-dimensional (3D) magnetic field imaging (MFI) has proven to be a natural, useful technique for non-destructively mapping 3D current paths in devices that allows for submicron vertical resolution. 3D X-ray microscopy (XRM) enables 3D tomographic imaging of advanced IC packages without the need to destroy the device. This is because it employs both geometric and optical image magnifications to achieve high spatial resolution. In this paper, we propose a fully nondestructive, 3D-capable workflow for FA comprising 3D MFI and 3D XRM. We present an application of this novel workflow to 3D defect localization in a complex 2.5D device combining high bandwidth memory (HBM) devices and an application specific integrated circuit (ASIC) unit on a Si interposer with a signal pin electrical short failure.

scholarly journals Open Localization in 3D Package with TSV Daisy Chain Using Magnetic Field Imaging and High-Resolution Three-Dimensional X-ray Microscopy

2021 ◽  
Vol 11 (17) ◽  
pp. 8148
Author(s):  
Yuan Chen ◽  
Ping Lai ◽  
Hong-Zhong Huang ◽  
Peng Zhang ◽  
Xiaoling Lin
Keyword(s):  
Magnetic Field ◽  
High Resolution ◽  
Failure Analysis ◽  
Complex Structure ◽  
Three Dimensional ◽  
X Ray ◽  
Defect Localization ◽  
Magnetic Field Imaging ◽  
3D Package ◽  
Field Imaging

With the development of 3D integrated packaging technology, failure analysis is facing more and more challenges. Defect localization in a 3D package is a key step of failure analysis. The complex structure and materials of 3D package devices demand non-destructive defect localization technology for full packages. Magnetic field imaging and three-dimensional X-ray technology are not affected by package material or form. They are effective methods to realize defect localization on 3D packages. In this paper, magnetic field imaging and high-resolution three-dimensional X-ray microscopy were used to localize the open defect in a 3D package with a TSV daisy chain. A two-probe RF method in magnetic field imaging was performed to resolve isolation of the defect difficulties resulting from many different branches of TSV daisy chains. Additionally, a linear decay method was used to target sub-micron resolution at a long working distance. Multiple partition scans from a high-resolution 3D X-ray microscopy with a two-stage magnification structure were used to achieve sub-micron resolution. The open location identified by magnetic field imaging was consistent with that identified by a three-dimensional X-ray microscope. The opening was located on the top metal in the proximity of the fifth via. Physical failure analysis revealed the presence of a crack in the top metal at the opening location.

Nondestructive Visualizations of Short Circuits in Ball Grid Arrays by Magnetic Field Imaging and Three-Dimensional X-Ray Microscopy

2016 ◽  
Author(s):  
Kazuhiro Suzuki ◽  
Masayoshi Tsutsumi ◽  
Masako Saito ◽  
Makoto Toda ◽  
Kouzou Yamamoto ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Short Circuit ◽  
Three Dimensional ◽  
Optical Beam ◽  
Circuit Board ◽  
Reconstruction Method ◽  
Resistance Change ◽  
X Ray ◽  
Magnetic Field Imaging ◽  
Field Imaging

Abstract It is important to locate a short circuit failure in semiconductor devices, and powerful tools such as lock-in thermography and optical beam induced resistance change are used. However, those tools are inappropriate for investigating the device covered with the impenetrable substance to light, because the covering substance blocks the light from the defect point in the device and also prevents the optical beam from outside of the device. We demonstrate that a subsurface short circuit in a ball grid array device can be located by magnetic field imaging (MFI) and the electromagnetic field reconstruction method (EM-FRM), which makes it possible to calculate a magnetic field in the immediate vicinity of the current that is the source of the field from a measured magnetic field at a distance. Moreover, we visualize the short circuit by three-dimensional X-ray microscopy. MFI is also applied to visualization of a magnetic field created by a current flowing inside a printed circuit board and a light emitting diode package.

Magnetic Field Imaging on Stacked Flash Memories by Laser Probing and SQUID Scanning

2017 ◽  
Author(s):  
K. Sanchez ◽  
G. Bascoul ◽  
F. Infante ◽  
N. Courjault ◽  
T. Nakamura
Keyword(s):  
Magnetic Field ◽  
Failure Analysis ◽  
Two Dimensions ◽  
Analysis Tool ◽  
Active Device ◽  
Current Path ◽  
3D Packaging ◽  
Magnetic Field Imaging ◽  
The Magnetic Field ◽  
Field Imaging

Abstract Magnetic field imaging is a well-known technique which gives the possibility to study the internal activity of electronic components in a contactless and non-invasive way. Additional data processing can convert the magnetic field image into a current path and give the possibility to identify current flow anomalies in electronic devices. This technique can be applied at board level or device level and is particularly suitable for the failure analysis of complex packages (stacked device & 3D packaging). This approach can be combined with thermal imaging, X-ray observation and other failure analysis tool. This paper will present two different techniques which give the possibility to measure the magnetic field in two dimensions over an active device. Same device and same level of current is used for the two techniques to give the possibility to compare the performance.

Backside Integrated Circuit Magnetic Field Imaging with a Quantum Diamond Microscope

2020 ◽  
Author(s):  
Edlyn V. Levine ◽  
Matthew J. Turner ◽  
Nicholas Langellier ◽  
Thomas M. Babinec ◽  
Marko Lončar ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Integrated Circuit ◽  
Large Data ◽  
Nitrogen Vacancy ◽  
Element Analysis ◽  
Data Set ◽  
Magnetic Field Imaging ◽  
Silicon Thickness ◽  
The Impact ◽  
Field Imaging

Abstract We present a new method for backside integrated circuit (IC) magnetic field imaging using Quantum Diamond Microscope (QDM) nitrogen vacancy magnetometry. We demonstrate the ability to simultaneously image the functional activity of an IC thinned to 12 µm remaining silicon thickness over a wide fieldof- view (3.7 x 3.7 mm2). This 2D magnetic field mapping enables the localization of functional hot-spots on the die and affords the potential to correlate spatially delocalized transient activity during IC operation that is not possible with scanning magnetic point probes. We use Finite Element Analysis (FEA) modeling to determine the impact and magnitude of measurement artifacts that result from the specific chip package type. These computational results enable optimization of the measurements used to take empirical data yielding magnetic field images that are free of package-specific artifacts. We use machine learning to scalably classify the activity of the chip using the QDM images and demonstrate this method for a large data set containing images that are not possible to visually classify.

Backside Fault Isolation Using a Magnetic Field Imaging System on SRAMs with Indirect Shorts

2000 ◽  
Author(s):  
L. A. Knauss ◽  
B. M. Frazier ◽  
A. B. Cawthorne ◽  
E. Budiarto ◽  
R. Crandall ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Integrated Circuit ◽  
Quantum Interference ◽  
Flip Chip ◽  
Imaging System ◽  
Fault Isolation ◽  
Image Subtraction ◽  
Magnetic Field Imaging ◽  
The Magnetic Field ◽  
Field Imaging

Abstract With the arrival of flip-chip packaging, present tools and techniques are having increasing difficulty meeting failure-analysis needs. Recently a magneticfield imaging system has been used to localize shorts in buried layers of both packages and dies. Until now, these shorts have been powered directly through simple connections at the package. Power shorts are examples of direct shorts that can be powered through connections to Vdd and Vss at the package level. While power shorts are common types of failure, equally important are defects such as logic shorts, which cannot be powered through simple package connections. These defects must be indirectly activated by driving the part through a set of vectors. This makes the magnetic-field imaging process more complicated due to the large background currents present along with the defect current. Magnetic-field imaging is made possible through the use of a SQUID (Superconducting Quantum Interference Device), which is a very sensitive magnetic sensor that can image magnetic fields generated by magnetic materials or currents (such as those in an integrated circuit). The current-density distribution in the sample can then be calculated from the magnetic-field image revealing the locations of shorts and other current anomalies. Presented here is the application of a SQUID-based magnetic-field imaging system for isolation of indirect shorts. This system has been used to investigate shorts in two flip-chip-packaged SRAMs. Defect currents as small as 38 μA were imaged in a background of 1 A. The measurements were made using a lock-in thechnique and image subtraction. The magnetic-field image from one sample is compared with the results from a corresponding infrared-microscope image.

An experimental study on characterizing damage and fracture of a rock-like material based on three-dimensional magnetic field imaging

2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Wenping Yue ◽  
Mingyang Yang
Keyword(s):  
Magnetic Field ◽  
Imaging System ◽  
Three Dimensional ◽  
Fracture Pattern ◽  
Content Type ◽  
Damage And Fracture ◽  
Magnetic Marker ◽  
Magnetic Field Imaging ◽  
The Magnetic Field ◽  
Field Imaging

Purpose The results showed that the use of a magnetic marker could relatively accurately reflect the fracture pattern inside the rock-like material (RLM). Design/methodology/approach This study investigated the internal structure and fracture pattern of a fractured RLM. Magnetized iron oxide powder, which was used as a magnetic marker, was mixed with water and glue to form a magnetic slurry, which was subsequently injected into a fractured RLM. After the magnetic slurry completely filled the cracks inside the RLM and became cemented, the distribution and magnitude of the magnetic field inside the RLM were determined using a three-dimensional (3D) magnetic field imaging system. Findings A model for determining the magnetic field strength was developed using MATLAB. Originality/value This model of 3D magnetic will further be used as a finite element tool to simulate and image cracks inside the rock.

3D Magnetic Field Imaging for Non-Destructive Fault Isolation

2013 ◽  
Author(s):  
A. Orozco ◽  
J. Gaudestad ◽  
N.E. Gagliolo ◽  
C. Rowlett ◽  
E. Wong ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Semiconductor Industry ◽  
Fault Isolation ◽  
Wafer Level ◽  
Moore’S Law ◽  
Moore's Law ◽  
Magnetic Field Imaging ◽  
Silicon Vias ◽  
Non Destructive ◽  
Field Imaging

Abstract While transistor gate lengths may continue to shrink for some time, the semiconductor industry faces increasing difficulties to satisfy Moore’s Law. One solution to satisfying Moore’s Law in the future is to stack transistors in a 3-dimensional (3D) formation. In addition, the need for expanding functionality, real-estate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques. We describe in this paper innovations in Magnetic Field Imaging for FI which have the potential to allow 3D characterization of currents for non-destructive fault isolation at every chip level in a 3D stack.

3D IC/Stacked Device Fault Isolation Using 3D Magnetic Field Imaging

2014 ◽  
Author(s):  
A. Orozco ◽  
N.E. Gagliolo ◽  
C. Rowlett ◽  
E. Wong ◽  
A. Moghe ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Fault Isolation ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Current Location ◽  
Geometrical Information ◽  
Magnetic Field Imaging ◽  
Silicon Vias ◽  
Non Destructive ◽  
Field Imaging

Abstract The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, realestate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.

Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

2015 ◽  
Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
3D Imaging ◽  
Three Dimensional ◽  
Serial Sectioning ◽  
Promising Technique ◽  
Flash Memories ◽  
X Ray ◽  
3D Information ◽  
The Impact

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

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