Fault Isolation of Metal-Insulator-Metal (MiM) Capacitor Failures by Lock-in Thermography (LIT)

2020 ◽  
Author(s):  
Ke-Ying Lin ◽  
Pei-Fen Lue ◽  
Jayce Liu ◽  
Paul Kenneth Ang
Keyword(s):  
Fault Isolation ◽  
Phase Image ◽  
Metal Insulator ◽  
Amplitude Image ◽  
Metal Insulator Metal ◽  
Defect Localization ◽  
Lock In

Abstract The paper demonstrates accurate fault isolation information of metal-insulator-metal (MiM) capacitor failures by lock-in thermograph (LIT). In this study, a phase image spot location at a lock-in frequency larger than 5 Hz gives more accurate defect localization than an LIT amplitude image or OBIRCH to determine the next FA steps.

Trends in Discrete Power MOSFET and Power System In-Package Fault Isolation

2017 ◽  
Author(s):  
Ian Kearney ◽  
Mark Dipsey
Keyword(s):  
Crystalline Silicon ◽  
Fault Isolation ◽  
Focal Plane Arrays ◽  
Long Wavelength ◽  
Band Emission ◽  
Defect Localization ◽  
Recent Developments ◽  
Limited Application ◽  
Controlled Environments ◽  
Lock In

Abstract Photoluminescence, defect-band emission, and Lock-in Infrared Thermography (LIT) generally enable the correlation of multi-crystalline silicon defect types. Long Wavelength Infrared (LWIR) thermal imaging has traditionally seen limited application in failure analysis. LWIR cameras are typically uncooled systems using a microbolometer Focal Plane Arrays (FPA) commonly used in industrial IR applications, although cooled LWIR cameras using Mercury Cadmium Tellurium (MCT) detectors exists as well. On the contrary, the majority of the MWIR cameras require cooling, using either liquid nitrogen or a Stirling cycle cooler. Cooling to approximately −196 °C (77 K), offers excellent thermal resolution, but it may restrict the span of applications to controlled environments. Recent developments in LWIR uncooled and unstabilized micro-bolometer technology combined with microscopic IR lens design advancements are presented as an alternative solution for viable low-level leakage (LLL) defect localization and circuit characterization. The 30 micron pitch amorphous silicon type detector used in these analyses, rather than vanadium oxide (VOx), has sensitivity less than 50mK at 25C. Case studies reported demonstrate LWIR enhanced package-level and die-level defect localization contrasted with other quantum and thermal detectors in localization systems.

Enhanced Comparison of Lock-In Thermography and Magnetic Microscopy for 3D Defect Localization of System in Packages

2012 ◽  
Author(s):  
Christian Schmidt ◽  
Frank Altmann ◽  
David P. Vallett
Keyword(s):  
Fault Isolation ◽  
Single Chip ◽  
3D Integration ◽  
Qualitative Comparison ◽  
Magnetic Current ◽  
Defect Localization ◽  
Isolation Methods ◽  
Open Defect ◽  
Magnetic Microscopy ◽  
Lock In

Abstract Lock-in thermography and magnetic current imaging are emerging as the two image-based fault isolation methods most capable of meeting the challenges of short and open defect localization in thick, opaque assemblies. Such devices are rapidly becoming prevalent as 3D integration begins to ramp up production. This paper expands on previously published work with a qualitative comparison of the techniques on single chip and stacked die packages with known designed-in or FIB created defects.

Lock-in Infrared Thermography for the Non-Destructive Testing of Fatigue Specimen with Defects

2010 ◽  
Vol 44-47 ◽  
pp. 576-580
Author(s):  
Yan Guang Zhao ◽  
Xing Lin Guo ◽  
Ming Fa Ren
Keyword(s):  
Infrared Thermography ◽  
Phase Image ◽  
Non Destructive Testing ◽  
Destructive Testing ◽  
Amplitude Image ◽  
Fatigue Specimen ◽  
Testing Frequency ◽  
Lock In ◽  
Non Destructive ◽  
Precise Testing

Lock-in infrared thermography method was gradually being used in fatigue studies because of its advantages such as real-time, quick-reaction, non-contact, non-destructive and so on. In this paper, non-destructive testing was applied to fatigue specimen with defects, based on lock-in infrared thermography. In parallel, the result was analyzed by using lock-in infrared thermography system developed by Cedip in French. The results show that more information of internal detects can be found from phase image than that from amplitude image. The experiment procedure indicated that a proper testing frequency was the key to the non-destructive testing. The data revealed that deeper depth and larger area of defect led to a precise testing result.

Fault isolation in a case study of failure analysis on Metal–Insulator–Metal capacitor structures

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1640-1643 ◽  
Author(s):  
V. Giuffrida ◽  
P. Barbarino ◽  
G. Muni ◽  
G. Calvagno ◽  
G. Latteo ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Fault Isolation ◽  
Metal Insulator ◽  
Metal Insulator Metal

scholarly journals FA Approach on MIM (Metal-Insulator-Metal) Capacitor Failures

2021 ◽  
Author(s):  
Kuang Shien Lee ◽  
Lai Khei Kuan
Keyword(s):  
Computer Aided Design ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Metal Insulator ◽  
Isolation Techniques ◽  
Metal Insulator Metal ◽  
The Difference ◽  
Voltage Contrast ◽  
Metal Layers

Abstract MIM (Metal-Insulator-Metal) capacitor is a capacitor fabricated between metal layers and usually in an array form. Since it is usually buried within stack of back-end metal layers, neither front side nor backside FA fault isolation techniques can easily pinpoint the defect location of a failing MIM capacitor. A preliminary fault isolation (FI) often needs to be performed by biasing the desired failing state setup to highlight the difference(s) of FI site(s) between failing unit & reference. Then, a detailed study of the CAD (Computer Aided Design) schematic and die layout focusing on the difference(s) of FI site(s) will lead to a more in-depth analyses such as Focused Ion-Beam (FIB) circuit edit, micro-probing/nano-probing, Voltage Contrast (VC) and other available FA techniques to further identify the defective MIM capacitor. Once the defective MIM capacitor was identified, FIB cross-section or delayering can be performed to inspect the physical defect on the MIM capacitor. This paper presents the FA approach and challenges in successfully finding MIM capacitor failures.

Accurate Defect Localization of Stacked Die Devices by Lock-in Thermography

2018 ◽  
Author(s):  
Ke-Ying Lin ◽  
Chih-Yi Tang ◽  
Yu Chi Wang
Keyword(s):  
Failure Analysis ◽  
Defect Modes ◽  
Defect Localization ◽  
Lock In

Abstract The paper demonstrates the moving of lock-in thermography (LIT) spot location by adjusting the lock-in frequency from low to high. Accurate defect localization in stacked-die devices was decided by the fixed LIT spot location after the lock-in frequency was higher than a specific value depending on the depth of the defect in the IC. Physical failure analysis was performed based on LIT results, which provided clear physical defect modes of the stacked-die devices.

Low Temperature Fault Isolation Using Soft Defect Localization

2012 ◽  
Author(s):  
Kristopher D. Staller
Keyword(s):  
Low Temperatures ◽  
Laser Scanning ◽  
Low Cost ◽  
Fault Isolation ◽  
Laser Scanning Microscopy ◽  
Cold Temperature ◽  
Multiple Point ◽  
Defect Localization ◽  
Low Levels

Abstract Cold temperature failures are often difficult to resolve, especially those at extreme low levels (< -40°C). Momentary application of chill spray can confirm the failure mode, but is impractical during photoemission microscopy (PEM), laser scanning microscopy (LSM), and multiple point microprobing. This paper will examine relatively low-cost cold temperature systems that can hold samples at steady state extreme low temperatures and describe a case study where a cold temperature stage was combined with LSM soft defect localization (SDL) to rapidly identify the cause of a complex cold temperature failure mechanism.

Fault Isolation of Open Defects Using Space Domain Reflectometry

2012 ◽  
Author(s):  
Mayue Xie ◽  
Zhiguo Qian ◽  
Mario Pacheco ◽  
Zhiyong Wang ◽  
Rajen Dias ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Fault Isolation ◽  
Nondestructive Technique ◽  
Space Domain ◽  
New Approach ◽  
Defect Localization ◽  
Open Faults ◽  
Open Defects ◽  
Application Optimization ◽  
Rf Magnetic Field

Abstract Recently, a new approach for isolation of open faults in integrated circuits (ICs) was developed. It is based on mapping the radio-frequency (RF) magnetic field produced by the defective part fed with RF probing current, giving the name to Space Domain Reflectometry (SDR). SDR is a non-contact and nondestructive technique to localize open defects in package substrates, interconnections and semiconductor devices. It provides 2D failure isolation capability with defect localization resolution down to 50 microns. It is also capable of scanning long traces in Si. This paper describes the principles of the SDR and its application for the localization of open and high resistance defects. It then discusses some analysis methods for application optimization, and gives examples of test samples as well as case studies from actual failures.

Modeling, Fabrication, and Electrical Testing of Metal-Insulator-Metal Diode

2011 ◽  
Author(s):  
Terrance O'Regan ◽  
Matthew Chin ◽  
Cheng Tan ◽  
Anthony Birdwell
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal
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