Cell Charge Loss by Formation of Inversion Channel in DRAM

Author(s):  
Hoonchang Yang ◽  
Keunchul Ryu ◽  
Dongin Seo ◽  
Kyoungrak Cho ◽  
Junsik Park ◽  
...  

Abstract As dimension shrinkage, uncommon phenomena have been occurring during write and read operation in DRAM. These phenomena are strongly related cell capacitance, and the sensitivity of leakage current increases. Leakage current, especially in cell capacitor or cell transistor, is a major cause of the imbalance between stored charge in write operation and served charge in the read operation. Generally, error induced by leakage current appears data-1 failure, but in our study data-0 failure is observed in the case of extreme low cell capacitance that failure level is ppb (parts per billion). Results show that this phenomenon is influenced by cell capacitance, gate/body voltage of cell transistor, and supplied voltage level of the bitline sense amplifier. Based on various results, the electron loss to form inversion electron channel of cell transistor is regarded as a major factor like Charge Feedthrough [5].

JURNAL ELTEK ◽  
2020 ◽  
Vol 18 (2) ◽  
pp. 59
Author(s):  
Awan Setiawan ◽  
Imron Ridzki ◽  
Priya Surya

Penyaluran energi listrik pada jaringan PT PLN PERSERO khususnya pada jaringan distribusi sering mengalami kegagalan yang disebabkan arus bocor pada isolator keramik. Intensitas kerusakan disebabkab oleh polutan debu yang menempel pada permukaan isolator, ditambah pula dengan kelembaban udara yang ada di daerah tropis seperti Indonesia. Hal ini secara kumulatif, menyebabkan flashover pada permukaan isolator dan menyebabkan kegagalan penyaluran energy listrik pada jaringan. Pengaplikasian Silicon Rubber sebagai bahan pelapis isolator dapat mengurangi polutan debu yang menempel pada permukaan, hasil penelitian menunjukkan bahwa parameter tegangan akan berpengaruh juga pada besarnya arus bocor yang mengalir pada permukaan isolator. Semakin tinggi tegangan kerja akan memperbesar nilai RMS arus bocor yang mengalir. Terukur pada level tegangan 20 kV arus bocor yang terukur memiliki RMS sebesar 0,0432 A dengan THD sebesar 15,76 % dengan beda fasa arus bocor terhadap tegangan sumber bersifat leading hampir mendekati α = 900. Distribution of electricity in PT PLN PERSERO network, especially in distribution networks often fails due to leakage current in ceramic insulation. The intensity of damage caused by dust pollutants that are attached to the insulation surface, coupled with the humidity of the air in tropical areas such as Indonesia. This cumulatively causes flashover on the insulation surface and causes failure of electricity distribution to the network. The use of Silicon Rubber as an insulating coating can reduce the amount of dust contaminated on the surface, the results show that the voltage parameter will also affect the amount of leakage current flowing to the insulation surface. Higher working voltage will increase the current RMS leakage value. Measured at a voltage level of 20 kV the current leakage was RMS 0.0432 A with THD of 15.76%, phase difference of leakage current to leading source voltage is almost close to α = 900.


Author(s):  
Raphael Borges Nobrega ◽  
Valmir Nascimento Júnior ◽  
Ítalo Oliveira Medeiros ◽  
Edson Guedes Costa ◽  
Ronimack Trajano Souza

<p>This paper aimed at the design and development of a data acquisition and control system using the Arduino open-source platform to automate equipment responsible for the IEC 60587 electrical tracking and erosion test. The developed system allows the selection of protection resistors specified by the standard from the voltage value informed by the operator, monitoring of the leakage current flowing over five samples simultaneously tested and automatically interrupts the samples if the leakage current exceeds 60 mA for more than two seconds. The leakage current values are measured indirectly from the voltage drop across 50 Ω shunt resistors installed in series with each sample. The voltage values on the shunt resistors are conditioned by a measuring circuit that allows the voltage level to be adjusted to the analog inputs of the microcontroller, ie, between 0 V and 5 V. The microcontroller treatment performs the voltage signal obtained by the measuring circuit, the calculation of the RMS value of the current and stop criterion monitoring the leakage current. The calibration of the leakage current measurement circuit was performed by comparing voltage values measured by a digital oscilloscope for four different alternate waveforms and values up to 5 Vrms, corresponding to currents up to 100 mA. The results showed that the circuit provided measurements close to the values measured by the oscilloscope, with errors below 11%. For current values between 30 mA and 80 mA, the errors were less than 6%.</p>


Nowadays power consumption has the highest priority in designing high-performance electronics systems. The main purpose of this paper is to present a 16-bitKogge-Stone Adder where the low control operation is attained by the decrease of exchanging action. In this paper, we propose a method called Sense amplifier Lector based Half-Buffer (SALHB) by exemplifying Sense Amplifier Half Buffer (SAHB) with LECTOR algorithm to lessen leakage current in circuit structure. A 16-piece Kogge Stone Adder (KSA) is structured and actualized utilizing an asynchronous Quasi-Delay-Insensitive cell configuration approach known as the SALHB algorithm. Generally, SAHB is an asynchronous QDI configuration approach which applies 4-phase signaling protocol and sub-edge operation to obtain low control dissipation and rapid of operation. Additionally, LECTOR algorithm is applied to SAHB configuration approach through which leakage current can be decreased further to a great degree. A portion of the asynchronous QDI cell templates are Pre-charged Half-buffer(PCHB) and Autonomous signal validity Half-buffer(ASVHB), as both the templates, use completion detector circuits which lead to high power dissipation and large area overhead. SAHB design surpasses these drawbacks. But, SAHB has more leakage current. Hence, SALHB method was proposed to overcome the problem of high leakage current. In this paper, the performance of KSA is analyzed in terms of power, delay, energy, rise time, fall time, settle time, duty cyle, throughput and slew rate.


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