scholarly journals SCM Application and Failure Analysis Procedure for Ion-Implantation Issues in Power Devices

Author(s):  
Kuang-Tse Ho ◽  
Cheng-Che Li

Abstract This research summarizes failure analysis results about ionimplantation related issues in Si-based power devices, including diode, MOSFET and IGBT. To find out this kind of defects, sample preparation, fault isolation and SCM inspection are critical steps, which will be explained in detail in this paper.

Author(s):  
Andrew J. Komrowski ◽  
N. S. Somcio ◽  
Daniel J. D. Sullivan ◽  
Charles R. Silvis ◽  
Luis Curiel ◽  
...  

Abstract The use of flip chip technology inside component packaging, so called flip chip in package (FCIP), is an increasingly common package type in the semiconductor industry because of high pin-counts, performance and reliability. Sample preparation methods and flows which enable physical failure analysis (PFA) of FCIP are thus in demand to characterize defects in die with these package types. As interconnect metallization schemes become more dense and complex, access to the backside silicon of a functional device also becomes important for fault isolation test purposes. To address these requirements, a detailed PFA flow is described which chronicles the sample preparation methods necessary to isolate a physical defect in the die of an organic-substrate FCIP.


Author(s):  
Gwee Hoon Yen ◽  
Ng Kiong Kay

Abstract Today, failure analysis involving flip chip [1] with copper pillar bump packaging technologies would be the major challenges faced by analysts. Most often, handling on the chips after destructive chemical decapsulation is extremely critical as there are several failure analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology.


Author(s):  
Jason H. Lagar ◽  
Rudolf A. Sia

Abstract Most Wafer Level Chip Scale Package (WLCSP) units returned by customers for failure analysis are mounted on PCB modules with an epoxy underfill coating. The biggest challenge in failure analysis is the sample preparation to remove the WLCSP device from the PCB without inducing any mechanical defect. This includes the removal of the underfill material to enable further electrical verification and fault isolation analysis. This paper discusses the evaluations conducted in establishing the WLCSP demounting process and removal of the epoxy underfill coating. Combinations of different sample preparation techniques and physical failure analysis steps were evaluated. The established process enabled the electrical verification, fault isolation and further destructive analysis of WLCSP customer returns mounted on PCB and with an epoxy underfill coating material. This paper will also showcase some actual full failure analysis of WLCSP customer returns where the established process played a vital role in finding the failure mechanism.


Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.


Author(s):  
Gil Garteiz ◽  
Javeck Verdugo ◽  
David Aveline ◽  
Eric Williams ◽  
Arvid Croonquist ◽  
...  

Abstract In this paper, a failure analysis case study on a custom-built vacuum enclosure is presented. The enclosure’s unique construction and project requirement to preserve the maximum number of units for potential future use in space necessitated a fluorocarbon liquid bath for fault isolation and meticulous sample preparation to preserve the failure mechanism during failure analysis.


Author(s):  
Lihong Cao ◽  
Manasa Venkata ◽  
Jeffery Huynh ◽  
Joseph Tan ◽  
Meng-Yeow Tay ◽  
...  

Abstract This paper describes the application of lock-in thermography (LIT) for flip-chip package-level failure analysis. LIT successfully detected and localized short failures related to both die/C4 bumps and package defects inside the organic substrate. The detail sample preparation to create short defects at different layers, LIT fault isolation methodology, and case studies performed with LIT are also presented in this paper.


Author(s):  
Dat Nguyen ◽  
Thao To ◽  
Ray Harrison ◽  
Cuong Phan ◽  
John Drummond

Abstract Owing to the configuration of cavity up and stacked die packaging and the requirements of backside analysis, both packaging types require similar sample preparation steps. This article describes the failure analysis (FA) process to be applied with cavity up and stack die packages. The FA process flow includes testing to determine the nature of the failure, failure correlation to chip and/or internal circuitry, die preparation for repackaging, die repackaging in a cavity down configuration, automated test equipment (ATE) testing to verify the integrity of the pre-packaging failure mode, backside thinning, global fault isolation, backside reconstruction, and defect identification by front side deprocessing. ATE FA can often be performed using special analysis modes and the modification of the test software to put tester in a halt or a loop during fault isolation. When this is completed, global FA techniques can be used. The article also presents a case study on the successful repackaging efforts of cavity up packages.


Author(s):  
Kuang-Tse Ho ◽  
Chien-Wei Wu ◽  
Te-Fu Chang ◽  
Chia-Hsiang Yen ◽  
Ching-Hsiang Chan

Abstract This research sets up failure analysis flow to verify failure mechanisms and root causes of different kinds of contact leakage. This flow mainly uses EBIC, C-AFM and nano-probing to do fault isolation and confirm electrical failure mechanisms. Appropriate sample preparation is also mandatory for FIB, SEM and TEM inspection.


Author(s):  
Christian Schmidt ◽  
Stephen T. Kelly ◽  
Ingrid De Wolf

Abstract With the growing complexity and interconnect density of modern semiconductor packages, package level FA is also facing new challenges and requirements. 3D X-Ray Microscopy (XRM) is considered a key method to fulfill these requirements and enable high success FA yield. After a short introduction into the basic principles of lab-based X-Ray tomography, 2 different approaches of X-Ray investigations are discussed and an integration into the daily FA flow is proposed. In the first example, fault isolation on a fully packaged device is demonstrated using a stacked die device. In the second example, a newly developed sample preparation flow in combination with Nanoscale 3D X-Ray Microscopy for Chip-Package-Interaction and Back-end-of-line feature imaging is introduced.


Author(s):  
W. S. Teo ◽  
M.S. Wei ◽  
V. Narang ◽  
C. L. Gan ◽  
C. Richardson ◽  
...  

Abstract In this paper, we present methods for targeted silicon thinning by contour milling to overcome challenges associated with thinning large devices to under 5 µm remaining silicon thickness. Implementation of these techniques are expected to improve the yield of ultra-thin sample preparation and thermal stability of the device through electrical failure analysis for subsequent physical failure analysis. Using a computer numerical controlled milling system, the natural device bow is exploited to thin a specified area of interest by stage tilting before 2D milling. To target a larger area of interests, contour maps are rigged to thin an area preferentially while remaining compatible with existing workflows. Electrical testing have found improved thermal stability of the locally thinned samples over globally thinned samples.


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