Epitaxy and characterization of AlGaInP-based LEDs on Si substrates for visible-spectrum light emission

ABSTRACTA novel immersion scanning technique for making microporous silicon has been successfully applied to blank and lithographically patterned Si substrates. The advantages of the method lie in its simplicity, speed and adaptability to large and odd-size substrates. The photoluminescence (PL) spectra of microporous Si show a continuous decrease in intensity between 200K and 2K, but are fully reversible. Thermal desorption spectroscopy on microporous Si shows a classic hydrogen desorption spectrum which coincides with a quenching of the PL intensity. Under constant excitation, a degradation of PL Intensity occurs in oxygen and wet nitrogen but is only partially reversible in dry N2. Microporous Si PN junctions exhibiting normal I-V characteristics have been successfully fabricated with standard Si VLSI processes. Visible light emission under forward bias is detected which increases linearly In Intensity with Input current. This is the first observation of electroluminescence in the visible region from microporous SI PN junctions.

Download Full-text

Study on the Effect of Porous Silicon Sizes for Potential Visible Photodetector

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.815.121 ◽

2015 ◽

Vol 815 ◽

pp. 121-130 ◽

Cited By ~ 1

Author(s):

Alhan Farhanah Abd Rahim ◽

N.M. Sah ◽

I.H. Hamzah ◽

Siti Noraini Sulaiman ◽

Musa Mohamed Zahidi

Keyword(s):

Porous Silicon ◽

Light Emission ◽

Spectral Response ◽

Quantum Confinement Effect ◽

Visible Spectrum ◽

Current Gain ◽

Energy Band Gap ◽

Current Voltage ◽

Process Simulator

In this work, the characterization of porous silicon (PS) for potential visible light emission was investigated by simulation. SILVACO TCAD simulator was used to simulate PS by using process simulator, ATHENA and device simulator, ATLAS. Different pore diameter sizes of the PS structures were constructed. The structural, optical and electrical characteristics of the structures PS were investigated by current-voltage (I-V), current gain, spectral response and the energy band gap. It was observed that PS enhances the current gain compare to bulk Si and exhibited photo emission in the visible spectrum which constitutes to the quantum confinement effect of the Si in the PS structures.

Download Full-text

Electron microscope characterization of MOCVD-grown gap layers on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144991 ◽

1986 ◽

Vol 44 ◽

pp. 724-725

Author(s):

K.M. Jones ◽

M.M. Al-Jassim ◽

J.M. Olson

Keyword(s):

Atmospheric Pressure ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Lattice Match ◽

Si Substrates ◽

Metal Organic ◽

Good Lattice ◽

Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Download Full-text

A Highly Crystalline Anthracene-Based MOF-74 Series Featuring Electrical Conductivity and Luminescence

10.26434/chemrxiv.8222492 ◽

2019 ◽

Author(s):

Patricia Scheurle ◽

Andre Mähringer ◽

Andreas Jakowetz ◽

Pouya Hosseini ◽

Alexander Richter ◽

...

Keyword(s):

Electrical Conductivity ◽

Metal Ions ◽

Light Emission ◽

Block Design ◽

High Surface ◽

Visible Spectrum ◽

Building Blocks ◽

Divalent Metal Ions ◽

Conductivity Enhancement ◽

Surface Areas

Recently, a small group of metal-organic frameworks (MOFs) has been discovered featuring substantial charge transport properties and electrical conductivity, hence promising to broaden the scope of potential MOF applications in fields such as batteries, fuel cells and supercapacitors. In combination with light emission, electroactive MOFs are intriguing candidates for chemical sensing and optoelectronic applications. Here, we incorporated anthracene-based building blocks into the MOF-74 topology with five different divalent metal ions, that is, Zn2+, Mg2+, Ni2+, Co2+ and Mn2+, resulting in a series of highly crystalline MOFs, coined ANMOF-74(M). This series of MOFs features substantial photoluminescence, with ANMOF-74(Zn) emitting across the whole visible spectrum. The materials moreover combine this photoluminescence with high surface areas and electrical conductivity. Compared to the original MOF-74 materials constructed from 2,5-dihydroxy terephthalic acid and the same metal ions Zn2+, Mg2+, Ni2+, Co2+ and Mn2+, we observed a conductivity enhancement of up to six orders of magnitude. Our results point towards the importance of building block design and the careful choice of the embedded MOF topology for obtaining materials with desired properties such as photoluminescence and electrical conductivity.

Download Full-text

Case Studies in Atomic Force Probe Analysis

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0153 ◽

2006 ◽

Author(s):

Randal Mulder ◽

Sam Subramanian ◽

Tony Chrastecky

Keyword(s):

Failure Analysis ◽

Case Studies ◽

Light Emission ◽

Electrical Characterization ◽

Logic Circuits ◽

Contrast Imaging ◽

Atomic Force ◽

Measuring Surface ◽

Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

Download Full-text

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

MRS Proceedings ◽

10.1557/proc-235-305 ◽

1991 ◽

Vol 235 ◽

Author(s):

Ying Wu ◽

W. Savin ◽

T. Fink ◽

N. M. Ravindra ◽

R. T. Lareau ◽

...

Keyword(s):

Electrical Characterization ◽

Furnace Annealing ◽

Si Substrates ◽

Conventional Furnace ◽

Mass Spec ◽

Current Voltage ◽

Shallow Junctions ◽

Current Voltage Characteristics ◽

Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Download Full-text

Growth and Characterization of AllnGaN/InGaN Heterostructures

MRS Proceedings ◽

10.1557/proc-423-341 ◽

1996 ◽

Vol 423 ◽

Author(s):

J. C. Roberts ◽

F. G. Mcintosh ◽

M. Aumer ◽

V. Joshkin ◽

K. S. Boutros ◽

...

Keyword(s):

High Performance ◽

Visible Spectrum ◽

Growth Conditions ◽

Light Emitting ◽

Mocvd Growth ◽

Near Ultraviolet ◽

Active Layers ◽

Double Heterostructures ◽

Lattice Matched

AbstractThe emission wavelength of the InxGa1−xN ternary system can span from the near ultraviolet through red regions of the visible spectrum. High quality double heterostructures with these InxGa1−xN active layers are essential in the development of efficient optoelectronic devices such as high performance light emitting diodes and laser diodes. We will report on the MOCVD growth and characterization of thick and thin InGaN films. Thick InxGa1−xN films with values of x up to 0.40 have been deposited and their photoluminescence (PL) spectra measured. AlGaN/InGaN/AlGaN double heterostructures (DHs) have been grown that exhibit PL emission in the violet, blue, green and yellow spectral regions, depending on the growth conditions of the thin InGaN active layer. Preliminary results of an AllnGaN/InGaN/AllnGaN DH, with the potential of realizing a near-lattice matched structure, will also be presented.

Download Full-text