scholarly journals Navigate flying molecular elephants safely to the ground: mass-selective soft landing up to the Mega-Dalton range by Electrospray Controlled Ion-Beam Deposition

2021 ◽  
Author(s):  
Andreas Walz ◽  
Karolina Stoiber ◽  
Annette Huettig ◽  
Hartmut Schlichting ◽  
Johannes V Barth
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Mass Range ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Soft Landing ◽  
Ion Beam Deposition ◽  
Maximum Resolution ◽  
Ion Guides ◽  
Beam Deposition

The prototype of a highly versatile and efficient preparative mass spectrometry system used for the deposition of molecules in ultra-high vacuum (UHV) is presented, along with encouraging performance data obtained on four model species which are thermolabile or not sublimable. The test panel comprises two small organic compounds, a protein, and a large DNA species covering a 4-log mass range up to 1.7 MDa as part of a broad spectrum of analyte species evaluated to date. Three designs of innovative ion guides, a novel digital mass-selective quadrupole (dQMS) and a standard electrospray ionization (ESI) source are combined to an integrated device, abbreviated Electrospray Controlled Ion Beam Deposition (ES-CIBD). Full control is achieved by i) the square-wave-driven radiofrequency (RF) ion guides with steadily tunable frequencies, including a dQMS allowing for investigation, purification and deposition of a virtually unlimited m/z range, ii) the adjustable landing energy of ions down to ~2 eV/z enabling integrity-preserving soft-landing, iii) the deposition in UHV with high ion beam intensity (up to 3 nA) limiting contaminations and deposition time, and iv) direct coverage control via the deposited charge. The maximum resolution of R=650 and overall efficiency up to T_total=4.4% calculated from solution to UHV deposition are remarkable as well, while the latter is mainly limited by the not yet optimized ionization performance. In the setup presented, a scanning tunneling microscope (STM) is attached for in situ UHV investigation of the deponents demonstrating a selective, structure-preserving process and atomically clean layers.

scholarly journals Navigate flying molecular elephants safely to the ground: mass-selective soft landing up to the Mega-Dalton range by Electrospray Controlled Ion-Beam Deposition

2021 ◽  
Author(s):  
Andreas Walz ◽  
Karolina Stoiber ◽  
Annette Huettig ◽  
Hartmut Schlichting ◽  
Johannes V Barth
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Mass Range ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Soft Landing ◽  
Ion Beam Deposition ◽  
Maximum Resolution ◽  
Ion Guides ◽  
Beam Deposition

The prototype of a highly versatile and efficient preparative mass spectrometry system used for the deposition of molecules in ultra-high vacuum (UHV) is presented along with encouraging performance data obtained on model species which are thermolabile or not sublimable. The test panel comprises two organic compounds, a protein, and DNA covering a 4-log mass range up to 1.7 MDa as part of a broad spectrum of analyte species. Three designs of innovative ion guides, a novel digital mass-selective quadrupole (dQMS) and a standard electrospray ionization (ESI) source are combined to an integrated device, abbreviated Electrospray Controlled Ion Beam Deposition (ES-CIBD). Full control is achieved by i) the square-wave-driven radiofrequency (RF) ion guides with steadily tunable frequencies, including a dQMS allowing for investigation, purification and deposition of a virtually unlimited m/z range, ii) the adjustable landing energy of ions down to ~2 eV/z enabling integrity-preserving soft-landing, iii) the deposition in UHV with high ion beam intensity (up to 3 nA) limiting contaminations and deposition time, and iv) direct coverage control via the deposited charge. The maximum resolution of R=650 and overall efficiency up to T-total=4.4% calculated from solution to UHV deposition are remarkable as well, while the latter is mainly limited by the not yet optimized ionization performance. In the setup presented, a scanning tunneling microscope (STM) is attached for in situ UHV investigation of the deponents demonstrating a selective, structure-preserving process and atomically clean layers.

Ion Beam Deposition for Novel Thin Film Materials and Coatings

2011 ◽  
Vol 674 ◽  
pp. 195-200 ◽  
Author(s):  
A.Y. Goikhman ◽  
S.A. Sheludyakov ◽  
E. A. Bogdanov
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ion Beam ◽  
High Vacuum ◽  
Growth Conditions ◽  
High Energy ◽  
Present Contribution ◽  
Ion Beam Deposition ◽  
Thin Film Preparation ◽  
Beam Deposition

The Ion Beam Deposition (IBD) technique is not very widespread, but simple and very powerful methodic of thin film preparation, allowing to obtain high quality, smooth and very uniform films on big substrate areas (until 40 cm diameter), by target ablation with high energy particles in high vacuum. For the bombarding of the target is convenient to use the charged particles – ions of Ar, because they are easy to disperse in the electric field. Also, including neutralizing system, allow to obtain high-energy neutrals, irradiating the target, producing thin films from any kind of solid targets: from simple metals to complex conducting and non-conducting stoichiometric alloys. Thus, energy of condensing target particles is an average from several units to tens of eV. In the present contribution, we discuss the possibilities and advantages of IBD technology on application examples, including results of functional properties research of Ti, TiO2, SiO2 and Ag thin films for medicine applications, Ni, NiOx, Co and CoO single layers and structures for spintronics applications, and TiO2-SiO2, Ti-Zr-O-SiO2 multilayer structures for laser mirrors applications, produced by IBD system. Good structural, morphological quality (with roughness ~ 0.3 nm) and high uniformity on big areas along with right phase and stoichiometric state is demonstrated by convenient standard techniques for the structures prepared under the optimized growth conditions.

Growth of Co ON Ag(100): A Comparison of Ultra Low Energyion Beam Deposition and Thermal Deposition

1999 ◽  
Vol 585 ◽  
Author(s):  
B. Degroote ◽  
J. Dekoster ◽  
S. Degroote ◽  
H. Pattyn ◽  
A. Vantomme ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Low Energy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Preferential Growth ◽  
Thermal Deposition ◽  
Ion Beam Deposition ◽  
Ag Substrate ◽  
Beam Deposition

AbstractWe have investigated the growth of Co deposited on Ag(100) with ultra low energy ion beam deposition. The preferred sites of nucleation, the island densities and heights are determined with scanning tunneling microscopy. Submonolayers of Co were ion beam deposited at 300 K using energies between 5 and 30 eV. Preferential growth of islands on the upper side of the mono-atomic Ag steps (i.e. step decoration) is observed for deposition energies of 5 and 15 eV. In addition, 3–4 ML deep holes are formed in the Ag substrate for deposition at 5 eV. At higher deposition energies, the number of holes per surface area decreases. The results are compared with experiments on thermal deposition of Co on Ag(100) as a function of substrate temperature, performed in a previous study.

scholarly journals Soft-landing electrospray ion beam deposition of sensitive oligoynes on surfaces in vacuum

2015 ◽  
Vol 377 ◽  
pp. 228-234 ◽  
Author(s):  
Gordon Rinke ◽  
Stephan Rauschenbach ◽  
Stephen Schrettl ◽  
Tobias N. Hoheisel ◽  
Jonathan Blohm ◽  
...  
Keyword(s):  
Ion Beam ◽  
Soft Landing ◽  
Ion Beam Deposition ◽  
Beam Deposition

scholarly journals Electrospray Ion Beam Deposition: Soft-Landing and Fragmentation of Functional Molecules at Solid Surfaces

ACS Nano ◽  
2009 ◽  
Vol 3 (10) ◽  
pp. 2901-2910 ◽  
Author(s):  
Stephan Rauschenbach ◽  
Ralf Vogelgesang ◽  
N. Malinowski ◽  
Jürgen W. Gerlach ◽  
Mohamed Benyoucef ◽  
...  
Keyword(s):  
Ion Beam ◽  
Solid Surfaces ◽  
Soft Landing ◽  
Ion Beam Deposition ◽  
Beam Deposition

Ar Cluster Ion Bombardment Effects on Semiconductor Surfaces

2000 ◽  
Vol 647 ◽  
Author(s):  
Toshio Seki ◽  
Kazumichi Tsumura ◽  
Takaaki Aoki ◽  
Jiro Matsuo ◽  
Gikan H. Takaoka ◽  
...  
Keyword(s):  
Surface Modification ◽  
Variable Temperature ◽  
Ion Beam ◽  
High Vacuum ◽  
Ion Bombardment ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Cluster Ion ◽  
Ion Impact ◽  
The Impact

AbstractNew surface modification processes have been demonstrated using gas cluster ion irradiations because of their unique interaction between cluster ions and surface atoms. For example, high quality ITO films could be obtained by O2 cluster ion assisted deposition at room temperature. It is necessary to understand the role of cluster ion bombardment during film formation for the further developments of this technology. Variable Temperature Scanning Tunneling Microscope (VT-STM) in Ultra High Vacuum (UHV) allows us to study ion bombardment effects on surfaces and nucleation growth at various temperatures.The irradiation effects between Ar cluster ion and Xe monomer ion were compared. When a Si(111) surface with Ge deposited to a few Å was annealed to 400°C, it was observed that many islands of Ge were formed. The surface with the Ge islands was irradiated by these ions. In the STM image of cluster-irradiated surface, large craters with diameter of about 100 Å were observed, while only small traces with diameter of about 20 Å were observed in monomer-irradiated surface. The number of Ge atoms displaced by one Ar cluster ion impact was much larger than that by one Xe ion impact. This result indicates that Ar cluster ion impacts can enhance the physical modification of Ge islands. When the sample irradiated with Ar cluster was annealed at 600°C, the hole remained, but the outer rim of the crater disappeared and the surface structure was reconstructed at the site of the rim. The depth of damage region in the target became shallower with decrease of the impact energy. These results indicate that low damage and useful surface modification can be realized using the cluster ion beam.

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

scholarly journals Strain-Relief Patterns and Kagome Lattice in Self-Assembled C60 Thin Films Grown on Cd(0001)

2021 ◽  
Vol 22 (13) ◽  
pp. 6880
Author(s):  
Zilong Wang ◽  
Minlong Tao ◽  
Daxiao Yang ◽  
Zuo Li ◽  
Mingxia Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Self Assembly ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Kagome Lattice ◽  
Tunneling Microscopy ◽  
Kagomé Lattice ◽  
Temperature Scanning ◽  
C60 Films

We report an ultra-high vacuum low-temperature scanning tunneling microscopy (STM) study of the C60 monolayer grown on Cd(0001). Individual C60 molecules adsorbed on Cd(0001) may exhibit a bright or dim contrast in STM images. When deposited at low temperatures close to 100 K, C60 thin films present a curved structure to release strain due to dominant molecule–substrate interactions. Moreover, edge dislocation appears when two different wavy structures encounter each other, which has seldomly been observed in molecular self-assembly. When growth temperature rose, we found two forms of symmetric kagome lattice superstructures, 2 × 2 and 4 × 4, at room temperature (RT) and 310 K, respectively. The results provide new insight into the growth behavior of C60 films.

scholarly journals Au(100) as a Template for Pentacene Monolayer

Molecules ◽  
2021 ◽  
Vol 26 (8) ◽  
pp. 2393
Author(s):  
Artur Trembułowicz ◽  
Agata Sabik ◽  
Miłosz Grodzicki
Keyword(s):  
Self Assembly ◽  
Molecular Layer ◽  
High Vacuum ◽  
Gold Surface ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Height Difference ◽  
Characteristic Features ◽  
Reconstructed Surface

The surface of quasi-hexagonal reconstructed Au(100) is used as the template for monolayer pentacene (PEN) self-assembly. The system is characterized by means of scanning tunneling microscopy at room temperature and under an ultra-high vacuum. A new modulated pattern of molecules with long molecular axes (MA) arranged along hex stripes is found. The characteristic features of the hex reconstruction are preserved herein. The assembly with MA across the hex rows leads to an unmodulated structure, where the molecular layer does not recreate the buckled hex phase. The presence of the molecules partly lifts the reconstruction—i.e., the gold hex phase is transformed into a (1×1) phase. The arrangement of PEN on the gold (1×1) structure is the same as that of the surrounding molecular domain on the reconstructed surface. The apparent height difference between phases allows for the distinction of the state of the underlying gold surface.

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

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