Preparation and Properties of Dy Doped La and Sc Solution of BiFeO3 Film

2013 ◽  
Vol 537 ◽  
pp. 109-113
Author(s):  
Xi Wei Qi ◽  
Xiao Yan Zhang ◽  
Xuan Wang ◽  
Hai Bin Sun ◽  
Jian Quan Qi
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Doping Level ◽  
Sol Gel ◽  
Second Phase ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Ito Glass ◽  
Dy Doping

A series of Dy doped La and Sc solution of BiFeO3 thin films have been prepared by using spin-coating process on conductive indium tin oxide (ITO)/glass substrates, which a simple sol-gel possess is applied and annealed at 500°C. With the increase of content of Dy, the strongest peak (110) of La and Sc solution BiFeO3 film tends to further broaden. There is no second phase existence within the present Dy doping level. Cross section scanning electron microscope (SEM) pictures revealed that the thickness of BiFeO3 film was about 370 nm. For Dy doping level is 0.05, the maximum double remanent polarization 2Pr of as-prepared BiFeO3 thin film is15.44 μC/cm2. Image of atomic force microscopy indicated that the root-mean-square surface roughness value of as-prepared BiFeO3 thin film is 2.11 nm. The dielectric constant of as-prepared films tends to firstly increase and then decrease with the increase of Dy content

Preparation and Characterization of BiFeO3 Film via Sol-Gel Spin-Coating Process

2011 ◽  
Vol 492 ◽  
pp. 202-205 ◽  
Author(s):  
Xi Wei Qi ◽  
Xiao Yan Zhang ◽  
Xuan Wang ◽  
Hai Bin Sun ◽  
Jian Quan Qi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Secondary Phases ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Ito Glass

BiFeO3 thin films were spin-coated on conductive indium tin oxide (ITO)/glass substrates by a simple sol-gel possess annealed at 470-590°C. The crystal structure of as-prepared BiFeO3 thin films annealed at different temperature was determined to be rhombohedral of R3m space and free of secondary phases was also confirmed. Cross section scanning electron microscope (SEM) pictures revealed that the thickness of BiFeO3 thin film was about 320 nm. The double remanent polarization 2Pr of BiFeO3 thin film annealed at 500°C is 2.5 μC/cm2 without applied field at room temperature. Image of atomic force microscopy indicated that the root-mean-square surface roughness value of BiFeO3 thin film was 6.13 nm.

scholarly journals Microwave Spectroscopic Detection of Human Hsp70 Protein on Annealed Gold Nanostructures on ITO Glass Strips

Biosensors ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 118
Author(s):  
Rodica Ionescu ◽  
Raphael Selon ◽  
Nicolas Pocholle ◽  
Lan Zhou ◽  
Anna Rumyantseva ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Stress Disorders ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Conductive Glass ◽  
Hsp70 Protein ◽  
Atomic Force ◽  
Ito Glass ◽  
First Time ◽  
Human Heat Shock Protein

Conductive indium-tin oxide (ITO) and non-conductive glass substrates were successfully modified with embedded gold nanoparticles (AuNPs) formed by controlled thermal annealing at 550 °C for 8 h in a preselected oven. The authors characterized the formation of AuNPs using two microscopic techniques: scanning electron microscopy (SEM) and atomic force microscopy (AFM). The analytical performances of the nanostructured-glasses were compared regarding biosensing of Hsp70, an ATP-driven molecular chaperone. In this work, the human heat-shock protein (Hsp70), was chosen as a model biomarker of body stress disorders for microwave spectroscopic investigations. It was found that microwave screening at 4 GHz allowed for the first time the detection of 12 ng/µL/cm2 of Hsp70.

Preparation and Properties of Multiferroic La-Doped BiFeO3 Thin Film

2012 ◽  
Vol 486 ◽  
pp. 417-421 ◽  
Author(s):  
Xiao Yan Zhang ◽  
Xi Wei Qi ◽  
Jian Quan Qi ◽  
Xuan Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Secondary Phases ◽  
Glass Substrates ◽  
Ito Glass ◽  
Sol Gel Process ◽  
La Doped

Multiferroic La-doped Bi1-xLaxFeO3 thin films were prepared on conductive indium tin oxide (ITO)/glass substrates through a simple sol-gel process. The crystal structure of La-doped Bi1-xLaxFeO3 thin films annealed at different temperature was determined to be rhombohedral of R3m space and free of secondary phases. The grain size of La-doped BiFeO3 thin films tends to become larger and the grain boundary is gradually ambiguous compared to pure BiFeO3. The double remanent polarization 2Pr of Bi0.9La0.1FeO3 thin film annealed at 500°C is 6.66 µC/cm2, which is slightly improved than that of pure BiFeO3 thin film. With the increase of La-doping levels, the dielectric constant is increased and the dielectric loss is obviously decreased.

Effect of Gas Dilution Ratios and Substrate Temperature on the Structural Transition of a-Si/μc-Si Thin-Film Solar Cell Using PECVD

2018 ◽  
Vol 786 ◽  
pp. 373-383
Author(s):  
Heba R. Abd El-Aaty ◽  
Osama Tobail ◽  
Madiha A. Shoeib ◽  
Iman El-Mahallawi
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Structural Transition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ito Glass ◽  
Gas Dilution

Thin films of mixed amorphous/ microcrystalline-phases have been researched during the last decade, for manufacturing silicon solar cells. In this work the Plasma Enhanced Chemical Vapor Deposition PECVD process parameters; namely dilution ratios and substrate temperature, were controlled to build i-layer at low dilution ratios with moderate substrate temperatures. In this work an intrinsic layer was deposited on Indium Tin Oxide ITO glass by PECVD technique, with different dilution ratios of silane in hydrogen to study the transition from amorphous to microcrystalline phase. The Si:H thin film was evaluated by field emission scanning electron microscopy, x-ray diffraction and atomic force microscopy. The structural transition between a-Si:H to μc-Si:H achieved at dilution ratio 13.3 and substrate temperature 250°C with surface roughness 22.5 nm.

Effect of Sc Doping on Ferroelectric and Dielectric Properties of Bi0.9La0.1FeO3 Thin Film by Sol-Gel Process

2012 ◽  
Vol 538-541 ◽  
pp. 78-82
Author(s):  
Xiao Yan Zhang ◽  
Xi Wei Qi ◽  
Jian Quan Qi ◽  
Xuan Wang ◽  
Huan Huan Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Glass Substrates ◽  
Ito Glass ◽  
Sol Gel Process

Pure Bi0.9La0.1Fe1-xScxO3 (x = 0, 0.05, 0.10, 0.15, 0.20) (BLFSO) thin films were deposited on conductive indium tin oxide (ITO)/glass substrates through a simple sol-gel process. The effect of Sc doping on the XRD, microstructure, dielectric and ferroelectric properties of BLFO films was studied. Compared to counterparts of Bi0.9La0.1FeO3 (BLFO) film, the grain refinement of all films is obvious. When the value of Sc is 0.15, the double remanent polarization 2Pr is effectively enhanced with the extreme value of 17.7µC/cm2. The dielectric constant exhibits a trends of increase firstly and then decrease with the increase amount of scandium level.

scholarly journals Opto-Electronic Properties of Epoxy/Silicone Blend Based Thin Films

2021 ◽  
Author(s):  
Younes Ziat ◽  
Hamza Belkhanchi ◽  
Maryama Hammi ◽  
Charaf Laghlimi ◽  
A Moutcine
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transition ◽  
Sol Gel ◽  
Glass Substrates ◽  
Nanostructured Thin Films ◽  
Ito Glass ◽  
Potential Applications ◽  
Optical Applications ◽  
Nitrogen Doped Carbon

Abstract Recently, the rise of two dimensional amorphous nanostructured thin films have ignited a big interest because of their intriguingly isotropic structural and physical properties leading to potential applications in the nano-optoelectronics. However, according to literature, most of optoelectronic properties are investigated on chalcogenides related heterostructures. This has motivated the present work aiming to provide a new platform for the fabrication, examination of the properties and the applications of 2D nanostructured thin films based on epoxy/silicone blend. Thin films of Epoxy/Silicone loaded with nitrogen doped carbon nanotubes (N-CNTs) were prepared by sol-gel method and deposited on Indium Tin Oxide (ITO) glass substrates at room temperature. Further examination of optical properties aimed the investigation of optical pseudo-gap and Urbach energy and enabled the determination of processed films thickness based on Manifacier and Swanepol method. The results indicated that the unloaded thin films have a direct optical transition with a value of 3.61 eV followed by noticeable shift towards narrowing gaps depending on the loading rate. Urbach's energy is 0.19 eV for the unloaded thin films, and varies from 0.43 to 1.33 eV for the loaded thin films with increasing the rate of N-CNTs. It is inversely variable with the optical pseudo-gap. Finally, Epoxy/Silicone loaded with N-CNTs nanocomposites films can be developed as active layers with specific optical characteristics, giving the possibility to be used in electro-optical applications.

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

scholarly journals Investigating the Nanocomposite Thin Films of Hematite α-Fe2O3 and Nafion for Cholesterol Biosensing Applications

2020 ◽  
Vol 2 ◽  
Author(s):  
Indra Sulania ◽  
R. Blessy Pricilla ◽  
G. B. V. S. Lakshmi
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Differential Pulse ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Enzyme Substrate ◽  
Atomic Force ◽  
Nanocomposite Thin Films ◽  
Multi Phase ◽  
Cholesterol Biosensor

Nanocomposite materials are multi-phase materials, usually solids, which have two or more component materials having different chemical and physical properties. When blended together, a newer material is formed with distinctive properties which make them an eligible candidate for many important applications. In the present study, thin films of nafion (polymer) and hematite or α-Fe2O3 (nanoparticles) nanocomposite is fabricated on indium tin oxide (ITO) coated glass substrates, due to its enhanced ionic conductivity, for cholesterol biosensor applications. Scanning electron microscopy and Atomic force microscopy revealed the formation of nanorod structured α-Fe2O3 in the films. The cyclic voltammetry (CV) studies of nafion-α-Fe2O3/ITO revealed the redox properties of the nanocomposites. The sensing studies were performed on nafion-α-Fe2O3/CHOx/ITO bioelectrode using differential pulse voltammetry (DPV) at various concentrations of cholesterol. The enzyme immobilization leaded to the selective detection of cholesterol with a sensitivity of 64.93 × 10−2 μA (mg/dl)−1 cm−2. The enzyme substrate interaction (Michaelis–Menten) constant Km, was obtained to be 19 mg/dl.

An efficient urea biosensor based on laser ablated ZnO thin film

2013 ◽  
Vol 1530 ◽  
Author(s):  
Neha Batra ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
High Electron ◽  
Zno Thin Film ◽  
Detection Range ◽  
Response Characteristics ◽  
Glass Substrates ◽  
Enhanced Sensitivity ◽  
Ito Glass ◽  
The Matrix

ABSTRACTZinc oxide (ZnO) thin film deposited onto indium tin oxide (ITO) coated Corning glass substrates using pulsed laser deposition (PLD) technique has been used as a matrix for realization of an efficient urea biosensor after immobilization of urease (Urs) enzyme onto the surface of ZnO. The bioelectrode (Urs/ZnO/ITO/glass) is found to be exhibiting an enhanced sensitivity of 22μΑmΜ−1cm−2 towards urea over a wide detection range of 5-200 mg/dl. The relatively low value of Michaelis menten constant (Km= 0.94mM) indicates high affinity of the immobilized urease towards the analyte (urea). The prepared biosensor retains 90% of its activity for more than 10 weeks. The observed enhanced response characteristics of bioelectrode are attributed to the growth of the matrix (highly c-axis oriented ZnO thin film) with desired surface morphology and high electron communication feature. The results confirm the promising application of PLD grown ZnO thin film as an efficient matrix for urea detection.

Effect of Copper Concentration on Characterization of Cu2Zn0.8Cd0.2SnS4 Pentrary Alloy Nanostructures

2015 ◽  
Vol 754-755 ◽  
pp. 1115-1119 ◽  
Author(s):  
A.S. Ibraheam ◽  
Y. Al-Douri ◽  
Uda Hashim
Keyword(s):  
Spin Coating ◽  
Copper Concentration ◽  
Sol Gel ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Average Grain Size ◽  
Alloy Nanostructures ◽  
Effect Of Copper

Cu2Zn0.8Cd0.2SnS4 pentrary alloy nanostructure were prepared and deposited on glass substrates with different copper concentrations ( 0.3, 0.5, 0.7 and 0.9 mol/L ) using Sol gel – spin coating method.morphological and analytical studies were investigated by Field Emission-Scanning Electron Microscope (FE-SEM), atomic force microscopy (AFM). It is found that the average grain size of Cu2Zn0.8Cd0.2SnS4 pentrary alloy nanostructure is 51.92 to 76.43 nm for the thin films prepared at 0.3, 0.5, 0.7 and 0.9 mol/L respectively .

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