scholarly journals Computational Design of an Integrated CMOS Readout Circuit for Sensing With Organic Field-Effect Transistors

2021 ◽  
Vol 2 ◽  
Author(s):  
H. Esmaeili Taheri ◽  
Michael U. Ocheje ◽  
P. Blake J. St. Onge ◽  
Simon Rondeau-Gagné ◽  
Mitra Mirhassani
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Computational Design ◽  
Cmos Technology ◽  
Total Power ◽  
Readout Circuit ◽  
Organic Field Effect Transistors ◽  
Sensing Applications ◽  
Total Power Consumption

Organic field-effect transistors (OFETs) are at the forefront of next generation electronics. This class of devices is particularly promising due to the possibility of fabrication on mechanically compliant and conformable substrates, and potential manufacturing at large scale through solution deposition techniques. However, their integration in circuits, especially using stretchable materials, is still challenging. In this work, the design and implementation of a novel structure for an integrated CMOS readout circuitry is presented and its fundamentals of operation are provided. Critical for sensing applications, the readout circuitry described is highly linear. Moreover, as several sources of mismatch and error are present in CMOS and OFET devices, a calibration technique is used to cancel out all the mismatches, thus delivering a reliable output. The readout circuit is verified in TSMC 0.18 μm CMOS technology. The maximum total power consumption in the proposed readout circuit is less than 571 μW, while fully loaded calibration circuit consumes a power less than 153 μW, making it suitable for sensors applications. Based on previously reported high mobility and stretchable semiconducting polymers, this new design and readout circuitry is an important step toward a broader utilization of OFETs and the design of stretchable sensors.

scholarly journals Bandgap Engineering of an Aryl-Fused Tetrathianaphthalene for Visible-Blind Organic Field-Effect Transistors

2021 ◽  
Vol 9 ◽  
Author(s):  
Lijuan Zhang ◽  
Xinzi Tian ◽  
Yantao Sun ◽  
Jiarong Yao ◽  
Shuyuan Yang ◽  
...  
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Near Infrared ◽  
Field Effect Transistors ◽  
Ambient Air ◽  
Operational Stability ◽  
Environmental Stability ◽  
Organic Field Effect Transistors ◽  
Major Barrier ◽  
Visible Blind

Stability problem of organic semiconductors (OSCs) because of photoabsorption has become a major barrier to large scale applications in organic field-effect transistors (OFETs). It is imperative to design OSCs which are insensitive to visible and near-infrared (VNIR) light to obtain both environmental and operational stability. Herein, taking a 2,3,8,9-tetramethoxy [1,4]benzodithiino[2,3-b][1,4]benzodithiine (TTN2) as an example, we show that controlling molecular configuration is an effective strategy to tune the bandgaps of OSCs for visible-blind OFETs. TTN2 adopts an armchair-like configuration, which is different from the prevailing planar structure of common OSCs. Because of the large bandgap, TTN2 exhibits no photoabsorption in the VNIR region and OFETs based on TTN2 show high environmental stability. The devices worked well after being stored in ambient air, (i.e. in the presence of oxygen and water) and light for over two years. Moreover, the OFETs show no observable response to light irradiation from 405–1,020 nm, which is also favorable for high operational stability.

scholarly journals Investigation on the Sensing Properties of Organic Field Effect Transistors Using P3HT

2020 ◽  
Author(s):  
Silpa S. Prasad ◽  
Divya G ◽  
Sindhu S ◽  
Shreekrishna Kumar K
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Xrd Pattern ◽  
Humidity Sensing ◽  
Morphological Studies ◽  
Sensing Applications ◽  
Crystalline Nature ◽  
Effect Transistor

The humidity sensing behavior and the properties of P3HT based thin film organic field effect transistor (OFET) has been reported. Layers with (Au)/P3HT/SiO2/(Au) are coated and OFET is fabricated. The XRD pattern of thin films are plotted which shows an orientation of (100) indicating its crystalline nature. The morphological studies report the presence of dreg like structures that can absorb water molecules from a humid environment which can be used in humidity sensing applications.

scholarly journals Carbon-paste nanocomposites as unconventional gate electrodes for electrolyte-gated organic field-effect transistors: electrical modulation and bio-sensing

2019 ◽  
Vol 7 (47) ◽  
pp. 14993-14998 ◽  
Author(s):  
Jose Muñoz ◽  
Francesca Leonardi ◽  
Tayfun Özmen ◽  
Marta Riba-Moliner ◽  
Arantzazu González-Campo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Carbon Paste ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Sensing Applications ◽  
Electrical Modulation ◽  
First Time

Nanocomposite carbon-paste electrodes (NC-CPEs) have been investigated for the first time in electrolyte-gated organic field-effect transistors (EGOFETs) as a replacement of conventional metal gate electrodes for bio-sensing applications.

scholarly journals Polarization-induced transport in ferroelelctric organic field-effect transistors

2019 ◽  
Author(s):  
◽  
Amrit Prasad Laudari
Keyword(s):  
Organic Semiconductors ◽  
Small Molecule ◽  
Dielectric Layer ◽  
Field Effect ◽  
Polyvinylidene Fluoride ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Sensing Applications ◽  
Organic Fets

In this research we study the role of ferroelectric dielectrics in organic field-effect transistors (FETs) to understand the mechanism of charge transport in organic semiconductors. The ferroelectric nature of the polymer, poly(vinylidene fluoride) (PVDF)), has been known for over 45 years. However, its role in interfacial transport in organic/polymeric FETs is not that well understood. PVDF and its copolymer, polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE), as a dielectric in organic FETs is a perfect test-bed for conducting transport studies where a systematic tuning of the dielectric constant with temperature may be achieved. By choosing small molecule organic semiconductors -- pentacene and 6,13 bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) -- along with a copolymer PVDF-TrFE as the dielectric layer, the FET characteristics are monitored as a function of temperature. Pentacene FETs show a weak temperature dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE, which is attributed to polarization fluctuation driven transport resulting from a coupling of the charge carriers to the surface phonons of the dielectric layer. A negative coefficient of carrier mobility is observed in TIPS-pentacene upwards of 200 K with the ferroelectric dielectric, while an activated transport is observed with non-ferroelectric dielectrics. We show that this behavior is correlated with the nature of the trap states in TIPS-pentacene. We also developed the method of dipole engineering of the PVDF-TrFE films to enhance the properties of organic FETs. PVDF-TrFE, despite its applications in a vast range of work (including as a gate dielectric in organic FET and sensing applications) poses concerns such as higher conductivity compared to other polymer non-ferroelectric dielectrics. We have come up with new methods of electrical poling the dielectric layer to enhance FET performance as well as reduce gate leakage issues. We demonstrate the effect of polarization rotation in PVDF-TrFE on the performance of small-molecule-based organic FETs. The subthreshold swing and other transistor parameters in organic FETs can be controlled in a reversible fashion by switching the polarization direction in the PVDF-TrFE layer. We further demonstrate a novel method of selective poling of the dielectric layer. By using solution processed TIPS-pentacene as the organic semiconductor, it is shown that textured poling of the PVDF-TrFE layer dramatically improves FET properties compared to unpoled or uniformly poled ferroelectric films. The texturing is achieved by first vertically poling the PVDF-TrFE film and then laterally poling the dielectric layer close to the gate electrode. TIPS-pentacene FETs show on/off ratios of 105 and hole mobilities of 1 cm2/Vs under ambient conditions with operating voltages well below-4 V. This research opens prospects of achieving low-operating FETs without any expensive patterning techniques.

Electrolyte-gated organic field-effect transistors for sensing applications

2011 ◽  
Vol 98 (15) ◽  
pp. 153302 ◽  
Author(s):  
F. Buth ◽  
D. Kumar ◽  
M. Stutzmann ◽  
J. A. Garrido
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Sensing Applications

scholarly journals Parylene C as a versatile dielectric material for organic field-effect transistors

2017 ◽  
Vol 8 ◽  
pp. 1532-1545 ◽  
Author(s):  
Tomasz Marszalek ◽  
Maciej Gazicki-Lipman ◽  
Jacek Ulanski
Keyword(s):  
Organic Semiconductors ◽  
Organic Electronics ◽  
Field Effect ◽  
Large Scale ◽  
Dielectric Material ◽  
Field Effect Transistors ◽  
New Technology ◽  
Electronic Devices ◽  
Organic Field Effect Transistors ◽  
Parylene C

An emerging new technology, organic electronics, is approaching the stage of large-scale industrial application. This is due to a remarkable progress in synthesis of a variety of organic semiconductors, allowing one to design and to fabricate, so far on a laboratory scale, different organic electronic devices of satisfactory performance. However, a complete technology requires upgrading of fabrication procedures of all elements of electronic devices and circuits, which not only comprise active layers, but also electrodes, dielectrics, insulators, substrates and protecting/encapsulating coatings. In this review, poly(chloro-para-xylylene) known as Parylene C, which appears to become a versatile supporting material especially suitable for applications in flexible organic electronics, is presented. A synthesis and basic properties of Parylene C are described, followed by several examples of use of parylenes as substrates, dielectrics, insulators, or protecting materials in the construction of organic field-effect transistors.

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