scholarly journals Thermal Transport in Two-Dimensional Heterostructures

2020 ◽  
Vol 7 ◽  
Author(s):  
Xue-Kun Chen ◽  
Yu-Jia Zeng ◽  
Ke-Qiu Chen
Keyword(s):  
Thermal Transport ◽  
Hexagonal Boron Nitride ◽  
Mechanical Strain ◽  
Transition Metal Dichalcogenides ◽  
Chemical Properties ◽  
Structural Defects ◽  
Two Dimensional ◽  
Open Problems ◽  
Theoretical Approaches ◽  
Low Dimensional

Heterostructures based on two-dimensional (2D) materials have attracted intense attention in recent decades due to their unusual and tunable physics/chemical properties, which can be converted into promising engineering applications ranging from electronics, photonics, and phononics to energy recovery. A fundamental understanding of thermal transport in 2D heterostructures is crucial importance for developing micro-nano devices based on them. In this review, we summarized the recent advances of thermal transport in 2D heterostructures. Firstly, we introduced diverse theoretical approaches and experimental techniques for thermal transport in low-dimensional materials. Then we briefly reviewed the thermal properties of various 2D single-phase materials beyond graphene such as hexagonal boron nitride (h-BN), phosphorene, transition metal dichalcogenides (TMDs) and borophene, and emphatically discussed various influencing factors including structural defects, mechanical strain, and substrate interactions. Moreover, we highlighted thermal conduction control in tailored nanosystems—2D heterostructures and presented the associated underlying physical mechanisms, especially interface-modulated phonon dynamics. Finally, we outline their significant applications in advanced thermal management and thermoelectrics conversion, and discuss a number of open problems on thermal transport in 2D heterostructures.

scholarly journals Precise Layer Separation of Two-Dimensional Nanomaterials for Scalable Optoelectronics

2021 ◽  
Vol 4 (1) ◽  
pp. 5
Author(s):  
Joohoon Kang
Keyword(s):  
Carbon Nanotubes ◽  
Hexagonal Boron Nitride ◽  
Buoyant Density ◽  
Transition Metal Dichalcogenides ◽  
Structural Heterogeneity ◽  
Layered Materials ◽  
Two Dimensional ◽  
2D Layered Materials ◽  
Quantum Confinement Effects ◽  
Low Dimensional

The biggest challenge in the field of low-dimensional nanomaterials, in terms of practical application, is scalable production with structural uniformity. As the size of materials is becoming smaller, the tendency of their structure-dependent properties, which directly affects the device reliability of largescale applications, is to become stronger due to quantum confinement effects. For example, one-dimensional (1D) carbon nanotubes have various electrical/optical properties based on their structures (e.g., diameter, chirality, etc.). Likewise, two-dimensional (2D) layered materials also exhibit different properties based on their thickness. To overcome such structural heterogeneity, isopycnic density gradient ultracentrifugation (i-DGU) will be introduced to achieve monodispersity of nanomaterials in structure based on their buoyant density differentiations. The i-DGU approach makes it possible to sort 1D carbon nanotubes and 2D layered materials such as graphene, transition metal dichalcogenides and hexagonal boron nitride with high structural purity, based on their structure. Various largescale optoelectronic applications, electrically driven light emitters and photodetectors demonstrated based on the monodisperse nanomaterials will be discussed.

scholarly journals Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides

2018 ◽  
Vol 47 (17) ◽  
pp. 6845-6888 ◽  
Author(s):  
Simone Bertolazzi ◽  
Marco Gobbi ◽  
Yuda Zhao ◽  
Claudia Backes ◽  
Paolo Samorì
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Chemical Properties ◽  
Two Dimensional ◽  
Multifunctional Materials ◽  
Molecular Chemistry ◽  
Physico Chemical ◽  
Metal Dichalcogenides

A variety of molecular chemistry approaches are currently investigated for tailoring the physico-chemical properties of ultrathin transition metal dichalcogenides towards novel hybrid multifunctional materials and devices.

scholarly journals Inversion domain boundaries in MoSe2 layers

RSC Advances ◽  
2018 ◽  
Vol 8 (58) ◽  
pp. 33391-33397 ◽  
Author(s):  
Quang Duc Truong ◽  
Nguyen Tuan Hung ◽  
Yuta Nakayasu ◽  
Keiichiro Nayuki ◽  
Yoshikazu Sasaki ◽  
...  
Keyword(s):  
Chemical Properties ◽  
Layered Compounds ◽  
Structural Defects ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Low Dimensional ◽  
Inversion Domain Boundaries ◽  
Physical And Chemical ◽  
Low Dimensional Materials ◽  
And Chemical Properties

Structural defects, including point defects, dislocation and planar defects, significantly affect the physical and chemical properties of low-dimensional materials, such as layered compounds.

Excitons in two-dimensional atomic layer materials from time-dependent density functional theory: mono-layer and bi-layer hexagonal boron nitride and transition-metal dichalcogenides

2020 ◽  
Vol 22 (5) ◽  
pp. 2908-2916 ◽  
Author(s):  
Yasumitsu Suzuki ◽  
Kazuyuki Watanabe
Keyword(s):  
Density Functional ◽  
Hexagonal Boron Nitride ◽  
Transition Metal Dichalcogenides ◽  
Atomic Layer ◽  
Time Dependent ◽  
Two Dimensional ◽  
Functional Theory ◽  
Mono Layer ◽  
Metal Dichalcogenides ◽  
Dependent Density

Time-dependent density functional theory has been applied to the calculation of absorption spectra for two dimensional atomic layer materials: mono-layer and bi-layer hexagonal boron nitride and mono-layer transition metal dichalcogenides.

scholarly journals Processing and characterisation of two-dimensional nanostructures

2014 ◽  
Vol 70 (a1) ◽  
pp. C510-C510
Author(s):  
Valeria Nicolosi
Keyword(s):  
Electron Microscopy ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Atomic Scale ◽  
Metal Chalcogenides ◽  
Two Dimensional ◽  
Wide Range ◽  
Electron Microscopes ◽  
Low Dimensional ◽  
Aberration Corrected

Low-dimensional nanostructured materials such as organic and inorganic nanotubes, nanowires and platelets are potentially useful in a number of areas of nanoscience and nanotechnology due to their remarkable mechanical, electrical and thermal properties. However difficulties associated with their lack of processability have seriously hampered both. In the last few years dispersion and exfoliation methods have been developed and demonstrated to apply universally to 1D and 2D nanostructures of very diverse nature, offering a practical means of processing the nanostructures for a wide range of innovative technologies. Among the first materials to have benefitted most from these advances are carbon nanotubes [6] and more recently graphene. Recently this work has been extended to boron nitride and a wide range of two-dimensional transition metal chalcogenides. These are potentially important because they occur in >40 different types with a wide range of electronic properties, varying from metallic to semiconducting. To make real applications truly feasible, however, it is crucial to fully characterize the nanostructures on the atomic scale and correlate this information with their physical and chemical properties. Advances in aberration-corrected optics in electron microscopy have revolutionised the way to characterise nano-materials, opening new frontiers for materials science. With the recent advances in nanostructure processability, electron microscopes are now revealing the structure of the individual components of nanomaterials, atom by atom. Here we will present an overview of very different low-dimensional materials issues, showing what aberration-corrected electron microscopy can do to answer materials scientists' questions. Particular emphasis will be given to the investigation of hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), and tungsten disulfide (WS2) and the study of their structure, defects, stacking sequence, vacancies and low-atomic number individual adatoms. The analyses of the h-BN data showed that majority of nanosheets retain bulk stacking. However several of the images displayed stacking different from the bulk. Similar, to 2D h-BN, images of MoS2 and WS2 have shown the stacking previously unobserved in the bulk. This novel stacking consists of Mo/W stacked on the top each other in the consecutive layers.

scholarly journals Overview of Rational Design of Binary Alloy for the Synthesis of Two-Dimensional Materials

Surfaces ◽  
2020 ◽  
Vol 3 (1) ◽  
pp. 26-39
Author(s):  
Hongyan Zhu ◽  
Chao Zhang ◽  
Xuefu Zhang ◽  
Zhiyuan Shi ◽  
Tianru Wu ◽  
...  
Keyword(s):  
Transition Metal ◽  
Rational Design ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Domain Size ◽  
Two Dimensional ◽  
Practical Applications ◽  
Metal Catalyzed

Two-dimensional (2D) materials attracted widespread interest as unique and novel properties different from their bulk crystals, providing great potential for semiconductor devices and applications. Recently, the family of 2D materials has been expanded including but not limited to graphene, hexagonal boron nitride (h-BN), transition metal carbides (TMCs), and transition metal dichalcogenides (TMDCs). Metal-catalyzed chemical vapor deposition (CVD) is an effective method to achieve precise synthesis of these 2D materials. In this review, we focus on designing various binary alloys to realize controllable synthesis of multiple CVD-grown 2D materials and their heterostructures for both fundamental research and practical applications. Further investigations indicated that the design of the catalytic substrate is an important issue, which determines the morphology, domain size, thickness and quality of 2D materials and their heterostructures.

Gate-tunable trion binding energy in monolayer MoS2 with plasmonic superlattice

Nanoscale ◽  
2020 ◽  
Vol 12 (34) ◽  
pp. 17754-17761
Author(s):  
Zhuang Luo ◽  
Hao Jia ◽  
Liu Lv ◽  
Quan Wang ◽  
Xiaohong Yan
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Chemical Properties ◽  
Physical And Chemical Properties ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
The World ◽  
Metal Dichalcogenides ◽  
Physical And Chemical ◽  
And Chemical Properties

Two-dimensional transition metal dichalcogenides exhibit promising potential and attract the attention of the world in the application of optoelectronic devices owing to their distinctive physical and chemical properties.

scholarly journals Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors

2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Yuhan Wang ◽  
Zhonghui Nie ◽  
Fengqiu Wang
Keyword(s):  
Electric Fields ◽  
Mechanical Strain ◽  
Transition Metal Dichalcogenides ◽  
Binding Energies ◽  
Two Dimensional ◽  
Coulomb Interactions ◽  
Relaxation Dynamics ◽  
Strong Light ◽  
2D Semiconductors ◽  
Metal Dichalcogenides

AbstractDue to strong Coulomb interactions, two-dimensional (2D) semiconductors can support excitons with large binding energies and complex many-particle states. Their strong light-matter coupling and emerging excitonic phenomena make them potential candidates for next-generation optoelectronic and valleytronic devices. The relaxation dynamics of optically excited states are a key ingredient of excitonic physics and directly impact the quantum efficiency and operating bandwidth of most photonic devices. Here, we summarize recent efforts in probing and modulating the photocarrier relaxation dynamics in 2D semiconductors. We classify these results according to the relaxation pathways or mechanisms they are associated with. The approaches discussed include both tailoring sample properties, such as the defect distribution and band structure, and applying external stimuli such as electric fields and mechanical strain. Particular emphasis is placed on discussing how the unique features of 2D semiconductors, including enhanced Coulomb interactions, sensitivity to the surrounding environment, flexible van der Waals (vdW) heterostructure construction, and non-degenerate valley/spin index of 2D transition metal dichalcogenides (TMDs), manifest themselves during photocarrier relaxation and how they can be manipulated. The extensive physical mechanisms that can be used to modulate photocarrier relaxation dynamics are instrumental for understanding and utilizing excitonic states in 2D semiconductors.

scholarly journals Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 832
Author(s):  
Hocheon Yoo ◽  
Keun Heo ◽  
Md. Hasan Raza Ansari ◽  
Seongjae Cho
Keyword(s):  
Electrical Properties ◽  
Transition Metal Dichalcogenides ◽  
Visible Region ◽  
Chemical Properties ◽  
Electrical Characterization ◽  
Semiconductor Materials ◽  
Two Dimensional ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Physical And Chemical

Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.

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