scholarly journals Thirty Years in Silicon Photonics: A Personal View

2021 ◽  
Vol 9 ◽  
Author(s):  
Lorenzo Pavesi

Silicon Photonics, the technology where optical devices are fabricated by the mainstream microelectronic processing technology, was proposed almost 30 years ago. I joined this research field at its start. Initially, I concentrated on the main issue of the lack of a silicon laser. Room temperature visible emission from porous silicon first, and from silicon nanocrystals then, showed that optical gain is possible in low-dimensional silicon, but it is severely counterbalanced by nonlinear losses due to free carriers. Then, most of my research focus was on systems where photons show novel features such as Zener tunneling or Anderson localization. Here, the game was to engineer suitable dielectric environments (e.g., one-dimensional photonic crystals or waveguide-based microring resonators) to control photon propagation. Applications of low-dimensional silicon raised up in sensing (e.g., gas-sensing or bio-sensing) and photovoltaics. Interestingly, microring resonators emerged as the fundamental device for integrated photonic circuit since they allow studying the hermitian and non-hermitian physics of light propagation as well as demonstrating on-chip heavily integrated optical networks for reconfigurable switching applications or neural networks for optical signal processing. Finally, I witnessed the emergence of quantum photonic devices, where linear and nonlinear optical effects generate quantum states of light. Here, quantum random number generators or heralded single-photon sources are enabled by silicon photonics. All these developments are discussed in this review by following my own research path.

2010 ◽  
Vol 7 (2) ◽  
pp. 381-388
Author(s):  
S. K. Ghoshal ◽  
H. S. Tewari

This presentation highlights of some scientific insights on the possibilities of photonic applications of silicon nanostructures (NSs) one of the most fertile research field in nano-crystallite physics that has innumerable possibilities of device applications. Nanostructured silicon is generic name used for porous Si (p-Si) as well as Si nanocrystals (NC-Si) having length scale of the order of few nanometer. The emission of a very bright photo-luminescence (PL) band and relatively weak electro-luminescence (EL) from low-dimensional silicon has opened up new avenue in recent years. It is important from a fundamental physics viewpoint because of the potential application of Si wires and dots in opto-electronics devices and information technology. Nanostructuring silicon is an effective way to turn silicon into a photonic material. It is observed that low-dimensional (one and two dimensions) silicon shows light amplification, photon confinement, photon trapping as well as non-linear optical effects. There is strong evidence of light localization and gas sensing properties of such NSs. Future nano-technology would replace electrical with optical interconnects that has appealing potentialities for higher-speed performance and immunity to signal cross talk. A varieties of applications includes LD, LED, solar cells, sensors, photonic band gap devices and Fibonacci quasi-crystals, to cite a few.


Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2123
Author(s):  
Ming Liu ◽  
Caochuang Wang ◽  
Pengcheng Li ◽  
Liang Cheng ◽  
Yongming Hu ◽  
...  

Many low-dimensional nanostructured metal oxides (MOXs) with impressive room-temperature gas-sensing characteristics have been synthesized, yet transforming them into relatively robust bulk materials has been quite neglected. Pt-decorated SnO2 nanoparticles with 0.25–2.5 wt% Pt were prepared, and highly attractive room-temperature hydrogen-sensing characteristics were observed for them all through pressing them into pellets. Some pressed pellets were further sintered over a wide temperature range of 600–1200 °C. Though the room-temperature hydrogen-sensing characteristics were greatly degraded in many samples after sintering, those samples with 0.25 wt% Pt and sintered at 800 °C exhibited impressive room-temperature hydrogen-sensing characteristics comparable to those of their counterparts of as-pressed pellets. The variation of room-temperature hydrogen-sensing characteristics among the samples was explained by the facts that the connectivity between SnO2 grains increases with increasing sintering temperature, and Pt promotes oxidation of SnO2 at high temperatures. These results clearly demonstrate that some low-dimensional MOX nanocrystals can be successfully transformed into bulk MOXs with improved robustness and comparable room-temperature gas-sensing characteristics.


2021 ◽  
pp. 23-132
Author(s):  
Debasish Datta

The technologies used in optical networks have evolved seamlessly over the past six decades. Optical fibers with extremely low loss and enormous bandwidth are used as the transmission medium, while semiconductor lasers and LEDs serve as optical sources, and the photodetectors – pin and avalanche photodiodes – are used to receive the optical signal at the destination nodes. The transmitted optical signal has to pass through a variety of network elements, which in turn need a wide range of passive and active devices, carrying out the necessary networking functionalities. For WDM optical networks, many of these tasks need to be accomplished in the optical domain itself in a wavelength-selective manner, calling for various types of WDM-based networking elements. In this chapter, we present a comprehensive description of the optical and optoelectronic devices that are used in today’s optical networks. (137 words)


2004 ◽  
Author(s):  
Spiros S. Mikroulis ◽  
Adonis Bogris ◽  
Eugenia Roditi ◽  
Dimitris Syvridis

2007 ◽  
Vol 21 (22) ◽  
pp. 3783-3796 ◽  
Author(s):  
S. K. GHOSHAL ◽  
DEVENDRA MOHAN ◽  
TADESSE TENAW KASSA ◽  
SUNITA SHARMA

This presentation is a short review of some scientific insights on the possibilities of photonic applications of nanostructured silicon ( NS – Si ), porous Si ( p - Si ) and Si nanocrystals ( NC – Si ), one of the most interesting problems in nano-crystallite physics. The emission mechanism of a very bright photo-luminescence (PL) band and relatively weak electro-luminescence (EL) are presently the main issue. The basic question lies in whether the emission is an extrinsic or intrinsic property of nanocrystals. It is important from a fundamental physics viewpoint because of the potential application of Si wires and quantum dots in optoelectronic devices and information technology. Nanostructuring silicon is an effective way to turn silicon into a photonic material. It is observed that low-dimensional (one and two dimensions) silicon shows light amplification, photon confinement, photon trapping as well as non-linear optical effects. There is strong evidence of light localization and gas sensing properties of such nanostructures. Future nano-technology would replace electrical with optical interconnects, which has appealing potential for higher-speed performance and immunity to signal cross talk.


2012 ◽  
Vol 717-720 ◽  
pp. 1195-1198
Author(s):  
Geunsik Lim ◽  
Tariq Manzur ◽  
Aravinda Kar

An uncooled SiC-based electro-optic device is developed for gas sensing applications. P-type dopants Ga, Sc, P and Al are incorporated into an n-type crystalline 6H-SiC substrate by a laser doping technique for sensing CO2, CO, NO2 and NO gases, respectively. Each dopant creates an acceptor energy level within the bandgap of the substrate so that the energy gap between this acceptor level and the valence band matches the quantum of energy emitted by the gas of interest. The photons of the gas excite electrons from the valence band to the acceptor level, which alters the electron density in these two states. Consequently, the refractive index of the substrate changes, which, in turn, modifies the reflectivity of the substrate. This change in reflectivity represents the optical signal of the sensor, which is probed remotely with a laser such as a helium-neon laser. Although the midwave infrared (3-5 mm) band is studied in this paper, the approach is applicable to other spectral bands.


Author(s):  
Jameel Ahmed ◽  
Mohammed Yakoob Siyal ◽  
Freeha Adeel ◽  
Ashiq Hussain

Science ◽  
2018 ◽  
Vol 361 (6397) ◽  
pp. 57-60 ◽  
Author(s):  
Shuo Sun ◽  
Hyochul Kim ◽  
Zhouchen Luo ◽  
Glenn S. Solomon ◽  
Edo Waks

Single-photon switches and transistors generate strong photon-photon interactions that are essential for quantum circuits and networks. However, the deterministic control of an optical signal with a single photon requires strong interactions with a quantum memory, which has been challenging to achieve in a solid-state platform. We demonstrate a single-photon switch and transistor enabled by a solid-state quantum memory. Our device consists of a semiconductor spin qubit strongly coupled to a nanophotonic cavity. The spin qubit enables a single 63-picosecond gate photon to switch a signal field containing up to an average of 27.7 photons before the internal state of the device resets. Our results show that semiconductor nanophotonic devices can produce strong and controlled photon-photon interactions that could enable high-bandwidth photonic quantum information processing.


2019 ◽  
Vol 9 (8) ◽  
pp. 1673 ◽  
Author(s):  
Li-Ying Liu ◽  
Yang Ding ◽  
Bo Zhou ◽  
Ning-Ning Jia ◽  
Kuan Wang ◽  
...  

Na2Ti7O15 (NTO) can be selected as candidate anode for high-performance sodium-ion batteries (SIBs). However, there are few reports of research on the mechanical properties of low-dimensional NTO, which is important for the stability of SIBs. In this work, by using the one-step hydrothermal method, NTO nanowires (NWs) with good orientation were prepared successfully. The transmission electron microscopy (TEM) and selected area electron diffraction (SAED)showed that the NTO NWs had a good aspect ratio and dispersion, with lengths over 20 μm. Further microstructure analysis showed that the nanowires grew along the (020) direction, and there were some "stripe" structures along the growing direction, which provides a good tunnel structure for Na ion channels. Further, the in situ mechanical analysis showed that the NTO NWs had excellent elastic deformation characteristics and mechanical structural stability. In addition, the NTO NWs also showed a good gas sensitivity to NO and NH3. Our results showed that the prepared NTO nanowires with a stripe tunnel oriented-structure and excellent mechanical properties may have a potential application in SIBs or other wearable sensor devices.


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