scholarly journals Wideband Waveguide-to-Microstrip Transition for mm-Wave Applications

2019 ◽  
Vol 22 (5) ◽  
pp. 17-32
Author(s):  
Andrey V. Mozharovskiy ◽  
Oleg V. Soykin ◽  
Aleksey A. Artemenko ◽  
Roman O. Maslennikov ◽  
Irina B. Vendik
Keyword(s):  
Experimental Investigation ◽  
Millimeter Wave ◽  
Insertion Loss ◽  
Communication Systems ◽  
60 Ghz ◽  
Feeding System ◽  
Frequency Range ◽  
Low Loss ◽  
Passive Components ◽  
Full Wave

Introduction. Increased data rate in modern communication systems can be achieved by raising the operational frequency to millimeter wave range where wide transmission bands are available. In millimeter wave communication systems, the passive components of the antenna feeding system, which are based on hollow metal waveguides, and active elements of the radiofrequency circuit, which have an interface constructed on planar printed circuit boards (PCB) are interconnected using waveguide-to-microstrip transition.Aim. To design and investigate a high-performance wideband and low loss waveguide-to-microstrip transition dedicated to the 60 GHz frequency range applications that can provide effective transmission of signals between the active components of the radiofrequency circuit and the passive components of the antenna feeding systemMaterials and methods. Full-wave electromagnetic simulations in the CST Microwave Studio software were used to estimate the impact of the substrate material and metal foil on the characteristics of printed structures and to calculate the waveguide-to-microstrip transition characteristics. The results were confirmed via experimental investigation of fabricated wideband transition samples using a vector network analyzer Results. The probe-type transition consist of a PCB fixed between a standard WR-15 waveguide and a back-short with a simple structure and the same cross-section. The proposed transition also includes two through-holes on the PCB in the center of the transition area on either side of the probe. A significant part of the lossy PCB dielectric is removed from that area, thus providing wideband and low-loss performance of the transition without any additional matching elements. The design of the transition was adapted for implementation on the PCBs made of two popular dielectric materials RO4350B and RT/Duroid 5880. The results of full-wave simulation and experimental investigation of the designed waveguide to microstrip transition are presented. The transmission bandwidth for reflection coefficient S11 < –10 dB is in excess of 50…70 GHz. The measured insertion loss for a single transition is 0.4 and 0.7 dB relatively for transitions based on RO4350B and RT/Duroid 5880.Conclusion. The proposed method of insertion loss reduction in the waveguide-to-microstrip transition provides effective operation due to reduction of the dielectric substrate portion in the transition region for various high-frequency PCB materials. The designed waveguide-to -microstrip transition can be considered as an effective solution for interconnection between the waveguide and microstrip elements of the various millimeter-wave devices dedicated for the 60 GHz frequency range applications.

A 10 MHz to 80 GHz BGA Transition from Chip to LTCC Interposer for Chip Scale Packages

2015 ◽  
Vol 2015 (CICMT) ◽  
pp. 000067-000072
Author(s):  
Bradley A. Thrasher ◽  
William E. McKinzie ◽  
Deepukumar M. Nair ◽  
Michael A. Smith ◽  
Allan Beikmohamadi ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Flip Chip ◽  
Ball Grid Array ◽  
Electrical Performance ◽  
60 Ghz ◽  
Test Chip ◽  
Full Wave ◽  
Test Board ◽  
Measurement Results ◽  
Solder Balls

Presented here are the design, fabrication, and measurement results of a low temperature cofired ceramic (LTCC) chip-to-interposer transition utilizing a flip-chip ball grid array (BGA) interconnect that provides excellent electrical performance up to and including 80 GHz. A test board fabricated in LTCC is used as the interposer substrate and another smaller LTCC part is used as a surrogate chip for demonstration purposes. The BGA chip-to-interposer transition is designed as a back-to-back pair of transitions with an assembly consisting of an LTCC interposer, an LTCC test chip, and a BGA interconnect constructed with 260 μm diameter polymer core solder balls. The LTCC material employed is DuPont™ GreenTape™ 9K7. Full-wave simulation results predict excellent electrical performance from 10 MHz to 80 GHz, with the chip-to-interposer BGA transition having less than 0.5 dB insertion loss at 60 GHz and less than 1 dB insertion loss up to 80 GHz. In an assembled package (back-to-back BGA transitions), the insertion loss was measured to be 1 dB per transition at 60 GHz and less than 2 dB per transition for all frequencies up to 80 GHz.

Inkjet and 3D Printing Technology for Fundamental Millimeter-Wave Wireless Packaging

2018 ◽  
Vol 15 (3) ◽  
pp. 101-106
Author(s):  
Bijan K. Tehrani ◽  
Ryan A. Bahr ◽  
Manos M. Tentzeris
Keyword(s):  
3D Printing ◽  
Millimeter Wave ◽  
Integrated Circuit ◽  
Coplanar Waveguide ◽  
Frequency Selective Surface ◽  
60 Ghz ◽  
Low Loss ◽  
Printing Technology ◽  
3D Printing Technology ◽  
Application Specific

Abstract This article outlines the design, processing, and implementation of inkjet and 3D printing technologies for the development of fully printed, highly integrated millimeter-wave (mm-wave) wireless packages. The materials, tools, and processes of each technology are outlined and justified for their respective purposes. Inkjet-printed 3D interconnects directly interfacing a packaging substrate with an integrated circuit (IC) die are presented using printed dielectric ramps and coplanar waveguide transmission lines exhibiting low loss (.6–.8 dB/mm at 40 GHz). Stereolithography 3D printing is presented for the encapsulation of IC dice, enabling the application-specific integration of on-package structures, including dielectric lenses and frequency selective surface–based wireless filters. Finally, inkjet and 3D printing technology are combined to present sloped mm-wave interconnects through an encapsulant, or through mold vias, achieving a slope of up to 65° and low loss (.5–.6 dB/mm at 60 GHz). The combination of these additive techniques is highlighted for the development of scalable, application-specific wireless packages.

Investigation of Ultralow Loss Interconnection Technique for LTCC based System-in-Package(SIP) Technology at 60GHz

2006 ◽  
Vol 969 ◽  
Author(s):  
Dong-Young Kim ◽  
Jae Kyoung Mun ◽  
Dong-Suk Jun ◽  
Haechoen Kim
Keyword(s):  
Transmission Lines ◽  
Insertion Loss ◽  
Return Loss ◽  
Frequency Range ◽  
Transmission Characteristics ◽  
Transition Structure ◽  
Low Loss ◽  
Signal Line ◽  
The Difference ◽  
Packaging Module

AbstractThe effects of wire and ribbon bond interconnection on the transmission characteristics at millimeter wave frequency range was presented. The insertion loss and return loss was closely related with the ratio of the signal line width to that of bonded wire or ribbon. The most promise condition for low loss interconnection was that the width of bonded wire or ribbon should be compatible to the width of signal lines. In the actual fabrication of LTCC amp module, the insertion loss of packaging is very small which means that the loss due to bonding is nearly negligible. However, the S11 and S22 degraded severely due to the difference of the types of transmission lines between chip and packaging module. A new transition structure was introduced in order to compensate this difference of transmission lines.

Advanced Ceramic Structures and Materials for High-Reliability Millimeter-Wave Applications

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000182-000185
Author(s):  
Iris Labadie
Keyword(s):  
Millimeter Wave ◽  
Semiconductor Device ◽  
High Reliability ◽  
Electrical Performance ◽  
Low Loss ◽  
Passive Components ◽  
Package Design ◽  
The Past ◽  
Performance Requirements ◽  
Circuit Components

Semiconductor device speeds and circuit operating frequencies have increased substantially over the past decade. Although millimeter-wave technology has been around for over 100 years, it is only within the past 5–10 years that increased demand for millimeter-wave commercial products and services has driven the development of new electronic package designs, low-loss materials, and the transformation of passive components to integrated and smaller geometries. High-reliability applications have employed millimeter-waves for several decades, but typically utilized heavy materials and distributed architectures. The transition of high-reliability millimeter-wave applications to new materials such as low-temperature co-fired ceramics requires innovative package designs to achieve comparable or better electrical performance in a much smaller form factor. Ceramic packaging technology continues to meet or exceed the performance requirements of high-reliability millimeter-wave applications with a broadened portfolio of material sets and innovative internal circuit components such as filter banks, antennas, and waveguides. Today's ceramic package design techniques and materials for applications within current and future high-reliability millimeter-wave markets will be discussed.

Inkjet and 3D Printing Technology for Fundamental Millimeter-Wave Wireless Packaging

2017 ◽  
Vol 2017 (1) ◽  
pp. 000252-000257 ◽  
Author(s):  
Bijan K. Tehrani ◽  
Ryan A. Bahr ◽  
Manos M. Tentzeris
Keyword(s):  
3D Printing ◽  
Millimeter Wave ◽  
Transmission Lines ◽  
Coplanar Waveguide ◽  
Frequency Selective Surface ◽  
60 Ghz ◽  
Low Loss ◽  
Printing Technology ◽  
3D Printing Technology ◽  
Application Specific

Abstract This paper outlines the design, processing, and implementation of inkjet and 3D printing technologies for the development of fully-printed, highly-integrated millimeter-wave (mm-wave) wireless packages. The materials, tools, and processes of each technology are outlined and justified for their respective purposes. Inkjet-printed 3D interconnects directly interfacing a packaging substrate with an IC die are presented using printed dielectric ramps and coplanar waveguide (CPW) transmission lines exhibiting low loss (0.6–0.8 dB/mm at 40 GHz). Stereolithography (SLA) 3D printing is presented for the encapsulation of IC dies, enabling the application-specific integration of on-package structures, including dielectric lenses and frequency selective surface (FSS)-based wireless filters. Finally, inkjet and 3D printing technology are combined to present sloped mm-wave interconnects through an encapsulation, or through-mold vias (TMVs), achieving a slope up to 65° and low loss (0.5–0.6 dB/mm at 60 GHz). The combination of these additive techniques is highlighted for the development of scalable, application-specific wireless packages.

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