scholarly journals Macroscopic Behavior and Microscopic Factors of Electron Emission from Chained Nanocarbon Coatings

2019 ◽  
Vol 5 (3) ◽  
pp. 55 ◽  
Author(s):  
Daleri Boqizoda ◽  
Anatoly Zatsepin ◽  
Evgeny Buntov ◽  
Anatoly Slesarev ◽  
Daria Osheva ◽  
...  
Keyword(s):  
Electron Emission ◽  
Linear Chain ◽  
Spectral Characteristics ◽  
Surface States ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Temperature Range ◽  
Quantum Properties ◽  
Gaseous Environment ◽  
Computational Electronics

The carbyne-containing films based on linear-chain carbon are promising materials for the manufacture of electronic equipment components. These carbyne-containing materials can be used as active elements of computational electronics and as ultra-miniature sensors of gaseous environment. The temperature studies of the electrical characteristics of carbyne-containing films by most of the scientific groups are limited to the low temperature range in which the quantum properties of nanostructures are most pronounced. We studied carbyne-containing films with a thickness of 20 and 400 nm on copper and silicon substrates using optically stimulated electron emission (OSEE) in the temperature range from room temperature (RT) to 400 °C. Theoretical modeling explains the dependence of work function on termination groups and substrate lattice. Experimental data revealed a relationship between the spectral characteristics of electron emission and temperature. The spectral contributions of both surface states and bulk interband transitions were clearly distinguishable.

Analysis of temperature dependent electrical characteristics of Au/n-GaAs/GaAs structures in a wide temperature range

Vacuum ◽  
2008 ◽  
Vol 83 (2) ◽  
pp. 276-281 ◽  
Author(s):  
A. Bengi ◽  
S. Altındal ◽  
S. Özçelik ◽  
S.T. Agaliyeva ◽  
T.S. Mammadov
Keyword(s):  
Wide Temperature Range ◽  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Temperature Range

Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Experimental Results ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

PZT Thin Films on Silicon Substrates: Formation and Research of Properties

2020 ◽  
Vol 28 ◽  
pp. 65-70 ◽  
Author(s):  
Victor V. Petrov ◽  
Yuriy N. Varzarev ◽  
Anton S. Kamentsev ◽  
Andrey A. Rozhko ◽  
Oksana A. Pakhomova
Keyword(s):  
Lead Zirconate Titanate ◽  
Test Bench ◽  
Surface States ◽  
Lead Zirconate ◽  
Silicon Substrates ◽  
Ferroelectric Films ◽  
Pzt Film ◽  
Structure Morphology ◽  
Pzt Films ◽  
Electrophysical Parameters

In this paper, we consider the technological features of the formation of thin ferroelectric films of lead zirconate titanate (PZT) by the method of plasma high-frequency reactive sputtering. The crystal structure, morphology and elemental composition of films deposited on silicon and oxidized silicon substrates are investigated. It is shown that the obtained PZT films have a perovskite structure and are polycrystalline with a predominant crystallite growth in the (110) direction. An automated test bench has been designed and manufactured for measuring the electrophysical parameters of ferroelectric films. The measured CV characteristics of the Ni/PZT/Si structure show the hysteresis caused by the polarization of the PZT film. It is noted that the asymmetry of the dependence of the spontaneous polarization on the applied voltage can be caused by the presence of surface states at the PZT/Si interface.

Effects of surface states on electrical characteristics of InN andIn1−xGaxN

2007 ◽  
Vol 76 (4) ◽  
Author(s):  
J. W. L. Yim ◽  
R. E. Jones ◽  
K. M. Yu ◽  
J. W. Ager ◽  
W. Walukiewicz ◽  
...  
Keyword(s):  
Surface States ◽  
Electrical Characteristics

Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 577-580 ◽  
Author(s):  
Irina P. Nikitina ◽  
Konstantin Vassilevski ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
Nickel Silicide ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Adhesion Layer ◽  
Temperature Range ◽  
Barrier Heights ◽  
Phase Inhomogeneity ◽  
Layer 4 ◽  
State Chemical ◽  
Nisi Phase

Nickel silicide Schottky contacts were formed on 4H-SiC by consecutive deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick, followed by annealing at temperatures from 600 to 750 °C. It was found that contacts with barrier heights of 1.45 eV, consisting mainly of NiSi phase, formed in the 600-660 °C temperature range, while annealing at around 750 °C led to the formation of Ni2Si phase with barrier heights of 1.1 eV. Annealing at intermediate temperatures resulted in the nucleation of Ni2Si grains embedded in the NiSi film which were directly observed by micro-Raman mapping. It was concluded that the thermodynamically unfavourable NiSi phase appeared in the 600-660 °C temperature range due to the fact that the solid state chemical reaction between Ni and SiC at these temperatures is controlled by nickel diffusion through the titanium barrier.

HIGH TEMPERATURE SUPERCONDUCTOR GdBa2Cu3O7−x INVESTIGATION BY OPTICALLY THERMOSTIMULATED EXOEMISSION (OTSEE) METHOD

1989 ◽  
Vol 03 (13) ◽  
pp. 987-991
Author(s):  
J. CHRZANOWSKI ◽  
B. SUJAK ◽  
I. BENZAR ◽  
A. J. ZALESKI ◽  
M. CISZEK ◽  
...  
Keyword(s):  
Surface Layer ◽  
High Temperature ◽  
Electron Emission ◽  
Structural Changes ◽  
High Temperature Superconductor ◽  
Temperature Range

Measurements of optically-thermostimulated electron emission from the high temperature superconductor GdBa 2 Cu 3 O 7−x were performed for the temperature range of 65–300 K. Changes in the intensity of the emitted electrons with temperature were observed. OTSEE peak at about 230 K is ascribed to structural changes in the sample, which are reflected at surface layer.

Study of Surface States of Thin Films by Thermostimulated Electron Emission

1972 ◽  
Vol 9 (2) ◽  
pp. 924-924 ◽  
Author(s):  
R. Forier ◽  
J.-P. Hiernaut ◽  
J. Van Cakenberghe
Keyword(s):  
Thin Films ◽  
Electron Emission ◽  
Surface States
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