scholarly journals The Effect of Charged Ag Nanoparticles on Thin Film Growth during DC Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 736
Author(s):  
Gil-Su Jang ◽  
Du-Yun Kim ◽  
Nong-Moon Hwang
Keyword(s):  
Electron Microscopy ◽  
Growth Rate ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Film Growth ◽  
Average Particle ◽  
Carbon Membrane ◽  
Dc Magnetron Sputtering ◽  
Film Growth Rate ◽  
Ag Particles

The possibility that charged nanoparticles (CNPs) are generated in the gas phase during direct current (DC) magnetron sputtering of Ag is studied. Sputtered Ag particles could be captured on an ultrathin amorphous carbon membrane for transmission electron microscopy (TEM) observation. It is confirmed that the average particle size and the total area of deposition under the condition of the positive bias applied to the substrate are bigger than those under the condition of the negative bias applied to the substrate. The results indicate that some of the sputtered Ag particles are negatively charged. To evaluate the contribution of negatively-charged particles to the film growth, Ag thin films were deposited for 30 min on the Si substrate with the substrate biases of −300, 0 and +300 V and analyzed by field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and four-point probe. When +300 V was applied to the substrate, the film growth rate was highest with the film thickness of 85.0 nm, the crystallinity was best with the smallest full width at half maximum (FWHM) value of 0.44 and the resistivity was smallest with 3.67 μΩ·cm. In contrast, when −300 V was applied to the substrate, the film growth rate was lowest with the film thickness of 68.9 nm, the crystallinity was worst with the largest FWHM value of 0.53 and the resistivity was largest with 8.87 μΩ·cm. This result indicates that the charge plays an important role in film growth and can be a new process parameter in sputtering.

scholarly journals Effect of Voltage Pulse Width and Synchronized Substrate Bias in High-Power Impulse Magnetron Sputtering of Zirconium Films

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 7
Author(s):  
Chin-Chiuan Kuo ◽  
Chun-Hui Lin ◽  
Jing-Tang Chang ◽  
Yu-Tse Lin
Keyword(s):  
Growth Rate ◽  
Magnetron Sputtering ◽  
High Power ◽  
Pulse Width ◽  
Film Growth ◽  
Highly Charged Ions ◽  
Argon Pressure ◽  
Hexagonal Prism ◽  
Film Growth Rate ◽  
Charged Ions

The Zr film microstructure is highly influenced by the energy of the plasma species during the deposition process. The influences of the discharge pulse width, which is the key factor affecting ionization of sputtered species in the high-power impulse magnetron sputtering (HiPIMS) process, on the obtained microstructure of films is investigated in this research. The films deposited at different argon pressure and substrate biasing are compared. With keeping the same average HiPIMS power and duty cycle, the film growth rate of the Zr film decreases with increasing argon pressure and enhancing substrate biasing. In addition, the film growth rate decreases with the elongating HiPIMS pulse width. For the deposition at 1.2 Pa argon, extending the pulse width not only intensifies the ion flux toward the substrate but also increases the fraction of highly charged ions, which alter the microstructure of films from individual hexagonal prism columns into a tightly connected irregular column. Increasing film density leads to higher hardness. Sufficient synchronized negative substrate biasing and longer pulse width, which supports higher mobility of adatoms, causes the preferred orientation of hexagonal α-phase Zr films from (0 0 0 2) to (1 0 1¯ 1). Unlike the deposition at 1.2 Pa, highly charged ions are also found during the short HiPIMS pulse width at 0.8 Pa argon.

Semi-Coherent Yttria Inclusions Occurring Spontaneously in YBa2Cu3O6+× Films Grown by Dc Magnetron Sputtering

1992 ◽  
Vol 275 ◽  
Author(s):  
T. I. Selinder ◽  
Z. Han ◽  
U. Helmersson ◽  
J. Magnusson ◽  
P. Norling ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Magnetron Sputtering ◽  
Critical Current ◽  
Film Growth ◽  
Number Density ◽  
Dc Magnetron Sputtering ◽  
High Quality ◽  
Transmission Electron ◽  
Current Densities

ABSTRACTSemi-coherent Y2O3 (yttria) inclusions have been observed in high quality, c-axis oriented YBa2Cu3O6+×,(YBCO) Alms. The inclusions were studied by transmission electron microscopy (TEM), and were found to be embedded in the YBCO matrix without disturbing its structure seriously. Their number density is estimated to higher than 2 × 1016 cm−3 in epitaxial YBCO films, having transport critical current densities in excess of 1 × 106 A cm−2 at 77 K. Magnetization measurements indicate a possible correlation between a high density of yttria inclusions and high pinning strength. The effects of the inclusions on film growth and microstructure is discussed.

scholarly journals Dependence of the Generation Behavior of Charged Nanoparticles and Ag Film Growth on Sputtering Power during DC Magnetron Sputtering

2021 ◽  
Author(s):  
Gil Su Jang ◽  
Du Yun Kim ◽  
Nong-Moon Hwang
Keyword(s):  
Electron Microscopy ◽  
Growth Rate ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Crystalline Quality ◽  
High Deposition Rate ◽  
Dc Magnetron Sputtering ◽  
Moderate Growth ◽  
Sputtering Power ◽  
Charged Nanoparticles

Abstract Effects of sputtering power on the deposition rate and microstructure, crystallinity, and electrical properties of Ag films during direct current (DC) magnetron sputtering are investigated. Thin films (~ 100 nm) are deposited at sputtering powers of 10, 20, 50, 100, 200 and 300 W and analyzed by field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and a four-point probe. The film deposited at a sputtering power of 10 W has the lowest growth rate, but the highest crystalline quality, with the lowest full width at half maximum (FWHM) and the lowest resistivity. The film deposited at a sputtering power of 200 W has the highest growth rate, and the second best crystalline quality in view of FWHM and resistivity. The film deposited at a sputtering power of 50 W has the moderate growth rate, and the worst crystalline quality in view of FWHM and resistivity. High-resolution TEM observations reveal that films deposited at sputtering powers of 10 and 200 W have far fewer defects, such as grain boundaries, dislocations and stacking faults than those deposited at a sputtering power of 50 W. Such deposition behavior could be explained by sputtering power, which affected the generation of the charged nanoparticles. And the high quality of films could be obtained at a high deposition rate, in which charge plays an important role. Graphic Abstract

scholarly journals Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 978
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Reaction Energy ◽  
Film Growth Rate ◽  
In2o3 Film ◽  
Intermediate Temperature Range ◽  
Layer Deposition

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

Research on the Adhesion of Stainless Steel Film on Gd by Magnetron Sputtering

2011 ◽  
Vol 189-193 ◽  
pp. 129-136
Author(s):  
Xiao Qiu Zheng ◽  
Shi Kun Xie ◽  
Rong Xi Yi
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Stainless Steel ◽  
Magnetron Sputtering ◽  
Protective Coating ◽  
Tension Test ◽  
Dc Magnetron Sputtering ◽  
Thin Fiber ◽  
Scanning Electron ◽  
Strength Of Adhesion

In order to research the adhesion of sputtering protective coating of Gd. Gd substrates was coated with 1Cr18Ni9Ti by means of DC magnetron sputtering technology. The characteristics of the film were investigated by scanning electron microscopy (SEM), EDS, SPM and the adhesions of film was tested by tension test. The results show that the films of 1Cr18Ni9Ti are distributed by means of islands when the sputtering was initiated and the grains are like thin fiber. After a few minutes, the films are smooth and perfect, the interferences between 1Cr18Ni9Ti and Gd join together strongly, and the largest strength of adhesion is 24.7MPa when the sputtering density is 966 w/cm2 and the sputtering time is 8 minutes.

Stress and Adhesion Determination of a Wedged Iron Film System by Buckle Morphologies

2012 ◽  
Vol 457-458 ◽  
pp. 113-117
Author(s):  
Hong Zhou ◽  
Sen Jiang Yu ◽  
Yong Ju Zhang ◽  
Miao Gen Chen
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Glass Substrate ◽  
Silicone Oil ◽  
Adhesion Energy ◽  
Iron Film ◽  
Film System ◽  
Dc Magnetron Sputtering ◽  
Very High

By using the mobile property of silicone oil, a wedged iron (Fe) film system, deposited on glass substrate, has been prepared by dc-magnetron sputtering technique. The wedged Fe film is quenched by the silicone oil during deposition, and therefore contains a very high compressive stress, which is relieved by formation of a large number of telephone cord buckles. Both the buckle width l and maximum buckle deflection δ increase linearly with the film thickness, but the ratio of δ to l (l/δ ) decreases steadily. The internal stress and adhesion energy are estimated in the frame of continuum elastic theory.

Microstresses in Molybdenum Nitride Thin Films Deposited by Reactive DC Magnetron Sputtering

2005 ◽  
Vol 490-491 ◽  
pp. 589-594 ◽  
Author(s):  
Yao Gen Shen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Growth ◽  
Nitrogen Addition ◽  
Molybdenum Nitride ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
Dense Microstructure ◽  
Transmission Electron ◽  
Complete Relaxation

Thin films of molybdenum nitride (MoNx with 0≤x≤0.35) were deposited on Si(100) at room temperature using reactive DC magnetron sputtering. The residual stress of films was measured as a function of sputtering pressure, nitrogen incorporation, and annealing temperature by wafer curvature-based technique. It was found that the stress of the films was strongly related to their microstructure, which depended mainly on the incorporation of nitrogen in the films. The film stresses without nitrogen addition strongly depended on the argon pressure and changed from highly compressive to highly tensile in a relatively narrow pressure range of 0.8-1.6 Pa. For pressures exceeding ~5.3 Pa, the stress in the film was nearly zero. Cross-sectional transmission electron microscopy indicated that the compressively stressed films contained a dense microstructure without any columns, while the films having tensile stress had a very columnar microstructure. High sputtering-gas pressure conditions yielded dendritic-like film growth, resulting in complete relaxation of the residual tensile stresses. It was also found that the asdeposited film was poorly ordered in structure. When the film was heated at ~775 K, crystallization occurred and the stress of the film drastically changed from –0.75 to 1.65 GPa. The stress development mechanism may be due to volumetric shrinkage of the film during crystallization.

scholarly journals The Effects of Annealing Temperature on the Structural Properties of ZrB2 Films Deposited via Pulsed DC Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 253 ◽  
Author(s):  
Wei-Chun Chen ◽  
Chao-Te Lee ◽  
James Su ◽  
Hung-Pin Chen
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Film Structure ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
X Ray

Zirconium diboride (ZrB2) thin films were deposited on a Si(100) substrate using pulsed direct current (dc) magnetron sputtering and then annealed in high vacuum. In addition, we discussed the effects of the vacuum annealing temperature in the range of 750 to 870 °C with flowing N2 on the physical properties of ZrB2 films. The structural properties of ZrB2 films were investigated with X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns indicated that the ZrB2 films annealed at various temperatures exhibited a highly preferred orientation along the [0001] direction and that the residual stress could be relaxed by increasing the annealing temperature at 870 °C in a vacuum. The surface morphology was smooth, and the surface roughness slightly decreased with increasing annealing temperature. Cross-sectional TEM images of the ZrB2/Si(100) film annealed at 870 °C reveals the films were highly oriented in the direction of the c-axis of the Si substrate and the film structure was nearly stoichiometric in composition. The XPS results show the film surfaces slightly contain oxygen, which corresponds to the binding energy of Zr–O. Therefore, the obtained ZrB2 film seems to be quite suitable as a buffer layer for III-nitride growth.

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