scholarly journals Vertical Graphene Growth on AlCu4Mg Alloy by PECVD Technique

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1108
Author(s):  
Ales Polzer ◽  
Josef Sedlak ◽  
Jan Sedlacek ◽  
Libor Benes ◽  
Katerina Mouralova
Keyword(s):  
Raman Spectroscopy ◽  
Vapor Deposition ◽  
Base Material ◽  
Chemical Vapor ◽  
Plasma Power ◽  
Transmission Microscopy ◽  
Promising Tool ◽  
Atomic Force ◽  
Factor Design ◽  
Setting Parameters

Vertical graphene, which belongs to nanomaterials, is a very promising tool for improving the useful properties of long-used and proven materials. Since the growth of vertical graphene is different on each base material and has specific deposition setting parameters, it is necessary to examine each base material separately. For this reason, a full factor design of experiment was performed with 26 = 64 rounds, which contained additional 5 central points, i.e., a total of 69 rounds of individual experiments, which was to examine the effect of input factors Temperature, Pressure, Flow, CH4, Plasma Power, and Annealing in H2 on the growth of vertical graphene on aluminum alloy AlCu4Mg. The deposition was performed using plasma-enhanced chemical vapor deposition (PECVD) technology. Mainly, the occurrence of graphene was analyzed, which was confirmed by Raman spectroscopy, as well as its thickness. The characterization was performed using electron and transmission microscopy, including an atomic force microscope. It was found that the growth of graphene occurred in 7 cases and its thickness is affected only by the interaction flow (sccm) × pretreatment H2 (sccm).

Atomic force microscopy and Raman spectroscopy study of the early stages of carbon nanowall growth by dc plasma-enhanced chemical vapor deposition

Carbon ◽  
2012 ◽  
Vol 50 (8) ◽  
pp. 2698-2702 ◽  
Author(s):  
Akihiko Yoshimura ◽  
Hirofumi Yoshimura ◽  
Seog Chul Shin ◽  
Ken-ichi Kobayashi ◽  
Makoto Tanimura ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spectroscopy Study ◽  
Dc Plasma ◽  
Force Microscopy ◽  
Early Stages ◽  
Atomic Force

INFLUENCE OF PLASMA PRETREATMENT IN THE FORMATION OF DIAMOND-LIKE CARBON THIN FILMS

2009 ◽  
Vol 16 (06) ◽  
pp. 881-886 ◽  
Author(s):  
R. MAHESWARAN ◽  
SHIVARAMAN RAMASWAMY ◽  
OJAS MAHAPATRA ◽  
B. PURNACHANDRA RAO ◽  
C. GOPALAKRISHNAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Other ◽  
Diamond Like Carbon ◽  
Force Microscopy ◽  
Uniform Coating ◽  
Atomic Force ◽  
Plasma Pretreatment

Plasma-enhanced chemical vapor deposition has been used to synthesize diamond-like carbon (DLC) thin films. High purity argon and methane gases were used as precursors for the fabrication of the DLC films. The influence of plasma pretreatment on the growth of the DLC films has been studied by subjecting one of the substrates to plasma pretreatment prior to deposition of the DLC films, while maintaining the other substrate as the control. The structural properties of the DLC films have been characterized using atomic force microscopy and Raman spectroscopy. The film grown on the pretreated substrate shows a more uniform coating as compared to the film grown on non-pretreated silicon substrate. The results are discussed based on diffusivity of carbon on silicon and the effect of the plasma pretreatment.

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

scholarly journals Plasma-Assisted Chemical Vapor Deposition of TiBN Coatings on Nanostructured Cemented WC-Co

Metals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1680
Author(s):  
Matija Sakoman ◽  
Danko Ćorić ◽  
Mateja Šnajdar Musa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hot Isostatic Pressing ◽  
Base Material ◽  
Surface Preparation ◽  
Chemical Vapor ◽  
Hard Coatings ◽  
Cemented Carbides ◽  
Wear Properties ◽  
Coating Adhesion

The plasma-assisted chemical vapor deposition (PACVD) technique has shown many advantages in applications, where thin coatings with superior wear properties are demanded, especially for geometrically complex parts. In this study, multilayered gradient TiBN coatings that were deposited on nanostructured cemented carbides by the PACVD method were investigated. Nanostructured samples of cemented carbides with the addition of 5 and 15 wt.% Co were sintered by the hot isostatic pressing, sinter-HIP technique. Surface preparation was conducted on samples in order to enable maximum coating adhesion. Tests that were conducted on produced samples aimed to investigate the mechanical and physical properties of coated samples. These tests included nanoindentation, surface layer characterization, and coating adhesion evaluation while using the Rockwell and scratch test. The obtained results confirmed that the PACVD process can be utilized for applying thin hard coatings to nanostructured cemented carbides that are produced by the sinter HIP process, resulting in a base material/ coating system that exhibits excellent physical and mechanical properties. The results presented in this paper give a valuable contribution to the research of TiBN coating systems and their potential for application under heavy wear conditions.

Omcvd Elaboration and Characterization of Silicon Carbide and Carbon-Silicon Carbide Films from Organosilicon Compounds

1992 ◽  
Vol 271 ◽  
Author(s):  
R. Morancho ◽  
A. Reynes ◽  
M'b. Amjoud ◽  
R. Carles
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Thermal Behavior ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicon Compounds ◽  
Carrier Gas

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.

Dehydrogenation and Polymerization of TiOxHy Films in Obtaining Anatase Coating at Low Temperature

2002 ◽  
Vol 749 ◽  
Author(s):  
Kouichi Takayama ◽  
Shigeo Ohshio ◽  
Hidetoshi Saitoh
Keyword(s):  
Raman Spectroscopy ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Crystal Size ◽  
Chemical Vapor ◽  
Amorphous Films ◽  
X Ray ◽  
Titanium Tetra Isopropoxide

ABSTRACTChemical-vapor-deposition of titanium tetra-isopropoxide (TTIP) under the atmosphere at low temperature has been conducted. The structure of the obtained films was assessed using Fourier transform infrared spectroscopy, X-ray diffractometry and Raman spectroscopy. These analyses indicated that amorphous TiOxHy films were obtained at gas temperatures in the range of 150–300 °C, and crystalline anatase-TiO2 film was formed at 350 °C. This distinction is accounted for by plausible chemical reactions as follows; the hydroxyl reaction of TTIP below 350 °C promotes the formation of the amorphous TiOxHy. As the temperature goes up to 350 °C, dehydrogenation of the TiOxHy films promotes to form crystalline TiO2. Also the obtained amorphous films were annealed for 10 min under the atmosphere in assessing the transformation proceeding in the solid state. The structural change is shown at 350 °C, indicating that the crystalline phase would be formed via dehydrogenation and polymerization on the surface of the amorphous phase under the atmosphere. The crystal size of the annealed films was evaluated in assessment for the transformation.

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