Plasma Etching of SiON Films Using Liquefied C7F14 Gas as Perfluorocarbon Alternative

2020 ◽  
Vol 12 (5) ◽  
pp. 641-646
Author(s):  
Jaemin Lee ◽  
Jihun Kim ◽  
Junmyung Lee ◽  
Hyun Woo Lee ◽  
Kwang-Ho Kwon
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Film Surface ◽  
Optical Emission ◽  
Mixed Gas ◽  
Force Microscopy ◽  
Physicochemical Changes ◽  
Etching Profile ◽  
Langmuir Probe Measurements

In this study, we evaluated the possibility of replacing existing perfluorocarbon gas with C7F14, which can be recovered in its liquid state from room-temperature air. We performed plasma etching of SiON films using the CF4 + X + O2 mixed gas, where X = CHF3, C4F8, or C7F14, and examined the etching characteristics of the films (e.g., etching rate, etching profile, and selectivity over Si). Using contact angle goniometry, atomic force microscopy, and X-ray photoelectron spectroscopy, we analyzed the physicochemical changes in the etched SiON film surface. Moreover, optical emission spectroscopy and double Langmuir probe measurements were carried out for plasma diagnosis. Compared with the conventional CHF3 and C4F8 mixed plasma, the C7F14 mixed plasma exhibited a more perpendicular etching profile with higher SiON/Si selectivity and a smoother surface.

Etching Characteristics of Low-k Dielectric Using C5H2F10 Liquefied Gas Plasma for Mitigating of Global Warming Potential

2021 ◽  
Vol 13 (9) ◽  
pp. 1764-1770
Author(s):  
Yeonsik Choi ◽  
Jongchan Lee ◽  
Younghun Oh ◽  
Hyun Woo Lee ◽  
Kwang-Ho Kwon
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Film Surface ◽  
Chemical Compositions ◽  
Nanoscale Devices ◽  
Mixed Gas ◽  
Gas Plasma

In this work, we studied the etch characteristics and dielectric constant change of SiOC thin films by plasma etching for the fabrication of nanoscale devices to evaluate the C5H2F10 as alternative etching gas. We performed plasma etching of SiOC films with inductively coupled plasma using the CF4+X+O2 mixed gas, where X = CHF3 and C5H2F10. Plasma diagnosis such as optical emission spectroscopy and double Langmuir probe measurements were carried. We analyzed the chemical compositions of residues on the etched SiOC film surface using X-ray photoelectron spectroscopy. After the process, contact resistance was measured using the transmission line method to analyze the degree of polymer on the surface of the silicon. Ellipsometry were used to evaluate the change in the dielectric constant of the thin film due to plasma exposure. It was confirmed that the etched profile was more vertical than that of the CHF3 gas plasma, and the increase in the dielectric constant of the SiOC thin film by C5H2F10 gas plasma is less than that of CHF3 gas plasma. These results confirmed that C5H2F10 gas was a powerful alternative to CHF3 gas in semiconductor processing for the fabrication of nanoscale devices.

Effect of Surface Chemistry on Ruthenium Wet Etching

2021 ◽  
Vol 314 ◽  
pp. 302-306
Author(s):  
Quoc Toan Le ◽  
E. Kesters ◽  
M. Doms ◽  
Efrain Altamirano Sánchez
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Wet Etching ◽  
X Ray ◽  
Force Microscopy ◽  
Metal Free ◽  
Atomic Force ◽  
Different Types ◽  
Effect Of Surface

Different types of ALD Ru films, including as-deposited, annealed Ru, without and with a subsequent CMP step, were used for wet etching study. With respect to the as-deposited Ru, the etching rate of the annealed Ru film in metal-free chemical mixtures (pH = 7-9) was found to decrease substantially. X-ray photoelectron spectroscopy characterization indicated that this behavior could be explained by the presence of the formation of RuOx (x = 2,3) caused by the anneal. A short CMP step applied to the annealed Ru wafer removed the surface RuOx, at least partially, resulting in a significant increase of the etching rate. The change in surface roughness was quantified using atomic force microscopy.

scholarly journals Contamination Particle Behavior of Aerosol Deposited Y2O3 and YF3 Coatings under NF3 Plasma

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 310 ◽  
Author(s):  
Je-Boem Song ◽  
Eunmi Choi ◽  
Seong-Geun Oh ◽  
Jin-Tae Kim ◽  
Ju-Young Yun
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Protective Coatings ◽  
Etching Rate ◽  
Physical Damage ◽  
Plasma Damage ◽  
Coating Materials ◽  
Zero Bias ◽  
Aerosol Deposition Method ◽  
Y2o3 Coating

The internal coatings of chambers exposed to plasma over a long period of time are subject to chemical and physical damage. Contamination particles that are produced by plasma damage to coatings are a major contribution to poor process reliability. In this study, we investigated the behavior of contamination particles produced from plasma damage to Y2O3 and YF3 protective coatings, which were applied by an aerosol deposition method. The coating materials were located at the powered electrode, the grounded electrode, and the grounded wall, which were exposed to a NF3 plasma. The mass loss at the powered electrode, which was exposed to the NF3 plasma etching under an applied bias, showed that the YF3 etching rate was higher than that of Y2O3. Conversely, the mass of coating increased at the grounded electrode and the grounded wall, which were exposed to NF3 plasma etching under zero bias. The mass of the Y2O3 coating increased more than that of the YF3 coating. X-ray photoelectron spectroscopy analysis showed that the Y2O3 coating corroded to YOxFy in the NF3 plasma, and YF3 existed as YFx. Light scattering sensor analysis showed that the YF3 coating produced fewer contamination particles than did the Y2O3 coating.

Surface Structuring of α/β-Sialon Ceramics by Plasma-Etching

2008 ◽  
Vol 403 ◽  
pp. 99-102
Author(s):  
Marco Riva ◽  
Rainer Oberacker ◽  
Michael J. Hoffmann ◽  
Carlos Ziebert
Keyword(s):  
Plasma Etching ◽  
Glassy Phase ◽  
Etching Rate ◽  
Etching Time ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Complementary Techniques ◽  
Reactive Gas

Effects of plasma etching on mixed /-sialon ceramics with different /-ratiowere investigated. A mix of CF4/O2 in a ratio of 2:1 was chosen as reactive gas. Parameters such as etching time and the material composition were examined. It was shown that -grains exhibit a larger etching rate than the grain boundary glassy phase or the -grains, generating pockets in a range of few µm. The so created surfaces were characterized both by scanning electron microscopy (SEM) and by atomic force microscopy (AFM) in contact mode. These complementary techniques also enabled the determination of the bearing ratio.

Chemical Topography of Si Etching in a Cl2 Plasma, Studied by X-RAY Photoelectron Spectroscopy and Laser-Induced Thermal Desorption

1993 ◽  
Vol 334 ◽  
Author(s):  
V. M. Donnelly ◽  
K. V. Guinn ◽  
C. C. Cheng ◽  
I. P. Herman
Keyword(s):  
Thermal Desorption ◽  
Plasma Etching ◽  
Discharge Tube ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Laser Induced Fluorescence ◽  
Xps Analysis ◽  
X Ray ◽  
Si Films ◽  
Positive Ion

AbstractThis paper describes x-ray photoelectron spectroscopy (XPS) studies of etching of Si in high-density Cl2 plasmas. Polycrystalline Si films, masked with photoresist stripes, are etched and then transferred in vacuum to the XPS analysis chamber. Shadowing of photoelectrons by adjacent stripes and differential charging of the photoresist and poly-Si were used to separate contributions from the top of the mask, the side of the mask, the etched poly-Si sidewall, and the bottom of the etched trench. In pure Cl2 plasmas, surfaces are covered with about one monolayer of Cl. If oxygen is introduced into the plasma, either by addition of O2 or by erosion of the glass discharge tube, then a thin Si-oxide layer forms on the sides of both the poly-Si and the photoresist. Laser-induced thermal desorption (LITD) was used to study etching in real time. LITD of SiCI was detected by laser-induced fluorescence. These studies show that the Si-chloride layer formed during plasma etching is stable after the plasma is extinguished, so the XPS measurements are representative of the surface during etching. LITD measurements as a function of pressure and discharge power show that the etching rate is limited by the positive ion flux to the surface, and not by the supply of Cl2, at pressures above 0.5 mTorr and for ion fluxes of σ4× 1016cm−2 s−1.

scholarly journals Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 906
Author(s):  
Chea-Young Lee ◽  
Young-Hee Joo ◽  
Minsoo P. Kim ◽  
Doo-Seung Um ◽  
Chang-Il Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Work Function ◽  
Surface Properties ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Film Surface ◽  
Etching Mechanism

Plasma etching processes for multi-atomic oxide thin films have become increasingly important owing to the excellent material properties of such thin films, which can potentially be employed in next-generation displays. To fabricate high-performance and reproducible devices, the etching mechanism and surface properties must be understood. In this study, we investigated the etching characteristics and changes in the surface properties of InGaZnO4 (IGZO) thin films with the addition of O2 gases based on a CF4/Ar high-density-plasma system. A maximum etch rate of 32.7 nm/min for an IGZO thin film was achieved at an O2/CF4/Ar (=20:25:75 sccm) ratio. The etching mechanism was interpreted in detail through plasma analysis via optical emission spectroscopy and surface analysis via X-ray photoelectron microscopy. To determine the performance variation according to the alteration in the surface composition of the IGZO thin films, we investigated the changes in the work function, surface energy, and surface roughness through ultraviolet photoelectron spectroscopy, contact angle measurement, and atomic force microscopy, respectively. After the plasma etching process, the change in work function was up to 280 meV, the thin film surface became slightly hydrophilic, and the surface roughness slightly decreased. This work suggests that plasma etching causes various changes in thin-film surfaces, which affects device performance.

scholarly journals Ultrashort Pulsed Laser Ablation of Magnesium Diboride: Plasma Characterization and Thin Films Deposition

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Angela De Bonis ◽  
Agostino Galasso ◽  
Antonio Santagata ◽  
Roberto Teghil
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Optical Emission ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Laser Target ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A MgB2target has been ablated by Nd:glass laser with a pulse duration of 250 fs. The plasma produced by the laser-target interaction, showing two temporal separated emissions, has been characterized by time and space resolved optical emission spectroscopy and ICCD fast imaging. The films, deposited on silicon substrates and formed by the coalescence of particles with nanometric size, have been analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction. The first steps of the films growth have been studied by Transmission Electron Microscopy. The films deposition has been studied by varying the substrate temperature from 25 to 500°C and the best results have been obtained at room temperature.

An Optimized ICP Etching Process for Pyramidal C-QWIP FPAs

2012 ◽  
Vol 1427 ◽  
Author(s):  
Jason Sun ◽  
Kwong-kit Choi ◽  
Unchul Lee
Keyword(s):  
Photoelectron Spectroscopy ◽  
Quantum Wire ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Focal Plane Arrays ◽  
Etching Process ◽  
Electrical Measurements ◽  
Process Technology ◽  
Icp Etching ◽  
Etching Profile

ABSTRACTWe developed an optimized inductively coupled plasma (ICP) etching process to produce GaAs pyramidal corrugated quantum well infrared photodetector focal plane arrays. A statistically-designed experiment was performed to optimize the etching parameters. The resulting parameters are discussed in terms of the effect on the etching rate and profile. This process uses a small amount of mask corrosion and the control of the etching mask gap to give a 45-50 degree V-groove etching profile, which is independent on the crystal orientation of GaAs. In the etching development, scanning electron microscope (SEM) was used to observe the surface morphology and the pattern profile. In addition, X-ray photoelectron spectroscopy (XPS) was utilized to obtain the elemental composition and the contamination of the etching surface. It is found that extremely small stoichiometric change and surface damage of the etching surface can be achieved while keeping relatively high etching rate and ~45 degree V-groove etching profile. This etching process is applied to the fabrication of pyramidal C-QWIP FPAs, which is expected to have better performance than the regular prism-shaped C-QWIPs according to electromagnetic (EM) modeling. The expected results will be verified by optical and electrical measurements. In addition to infrared detectors, this process technology can also be applied to GaAs V-groove solar cell, quantum wire light-emitting diodes, quantum wire lasers, and other GaAs –based devices.

scholarly journals Plasma Etching Behavior of SF6 Plasma Pre-Treatment Sputter-Deposited Yttrium Oxide Films

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 637
Author(s):  
Wei-Kai Wang ◽  
Sung-Yu Wang ◽  
Kuo-Feng Liu ◽  
Pi-Chuen Tsai ◽  
Yu-Hao Zhang ◽  
...  
Keyword(s):  
Yttrium Oxide ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Chemical Compositions ◽  
Plasma Irradiation ◽  
Fluorocarbon Plasma ◽  
Sulfur Fluoride ◽  
Pre Treatment ◽  
Sputter Deposited

Yttrium oxyfluoride (YOF) protective materials were fabricated on sputter-deposited yttrium oxide (Y2O3) by high-density (sulfur fluoride) SF6 plasma irradiation. The structures, compositions, and fluorocarbon-plasma etching behaviors of these films were systematically characterized by various techniques. After exposure to SF6 plasma, the Y2O3 film surface was fluorinated significantly to form a YOF film with an approximate average thickness of 30 nm. X-ray photoelectron spectroscopy revealed few changes in the elemental and chemical compositions of the surface layer after fluorination, confirming the chemical stability of the YOF/Y2O3 sample. Transmission electron microscopy confirmed a complete lattice pattern on the YOF/Y2O3 structure after fluorocarbon plasma exposure. These results indicate that the SF6 plasma-treated Y2O3 film is more erosion resistant than the commercial Y2O3 coating, and thus accumulates fewer contamination particles.

X-ray photoelectron spectroscopy characterization and morphology of MgO thin films grown on single-crystalline diamond (100)

2002 ◽  
Vol 17 (8) ◽  
pp. 1914-1922 ◽  
Author(s):  
S. M. Lee ◽  
T. Ito ◽  
H. Murakami
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Growth Front ◽  
Electron Beam Evaporation ◽  
Single Crystalline ◽  
X Ray ◽  
Force Microscopy ◽  
Magnesium Peroxide ◽  
Surface Morphologies

The morphology and composition of MgO films grown on single-crystalline diamond (100) have been studied. MgO thin films were deposited in the substrate temperature range from room temperature (RT) to 723 K by means of electron beam evaporation using a MgO powder source. Atomic force microscopy images indicated that the film grown at RT without O2 supply was relatively uniform and flat whereas that deposited in oxygen ambient yielded higher growth rates and rough surface morphologies. X-ray photoelectron spectroscopy analyses demonstrate that the MgO film deposited at RT without O2 has the composition closest to that of the stoichiometric MgO and that a thin contaminant layer composed mainly of magnesium peroxide (before etching) or hydroxide (after etching) was unintentionally formed on the film surface, respectively.These results will be discussed in relation to the interaction among the evaporated species and intentionally supplied oxygen molecules at the growth front as well as the interfacial energy between diamond and MgO.

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