scholarly journals High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices

Materials ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 445 ◽  
Author(s):  
Seong-Ji Min ◽  
Myeong Cheol Shin ◽  
Ngoc Thi Nguyen ◽  
Jong-Min Oh ◽  
Sang-Mo Koo
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
High Performance ◽  
Thermal Sensitivity ◽  
Forward Bias ◽  
Temperature Sensors ◽  
Peak Sensitivity ◽  
Good Repeatability ◽  
And Control

Schottky diode-based temperature sensors are the most common commercially available temperature sensors, and they are attracting increasing interest owing to their higher Schottky barrier height compared to their silicon counterparts. Therefore, this paper presents a comparison of the thermal sensitivity variation trend in temperature sensors, based on dual 4H-SiC junction barrier Schottky (JBS) diodes and Schottky barrier diodes (SBDs). The forward bias current–voltage characteristics were acquired by sweeping the DC bias voltage from 0 to 3 V. The dual JBS sensor exhibited a higher peak sensitivity (4.32 mV/K) than the sensitivity exhibited by the SBD sensor (2.85 mV/K), at temperatures ranging from 298 to 573 K. The JBS sensor exhibited a higher ideality factor and barrier height owing to the p–n junction in JBS devices. The developed sensor showed good repeatability, maintaining a stable output over several cycles of measurements on different days. It is worth noting that the ideality factor and barrier height influenced the forward biased voltage, leading to a higher sensitivity for the JBS device compared to the SBD device. This allows the JBS device to be suitably integrated with SiC power management and control circuitry to create a sensing module capable of working at high temperatures.

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Contacts ◽  
Electrical Behavior ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

scholarly journals Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 636
Author(s):  
Mehadi Hasan Ziko ◽  
Ants Koel ◽  
Toomas Rang ◽  
Muhammad Haroon Rashid
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Doping Profile ◽  
Structural Defects ◽  
Diffusion Welding ◽  
Native Oxide Layer ◽  
Electrical Characteristics ◽  
Discrete Energy Level ◽  
P Type

The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on the p-type 4H-SiC substrate with a novel technology; DW. The electrical properties of physically fabricated Al-Foil/4H-SiC SBD have been investigated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics based on the thermionic emission model in the temperature range (300 K–450 K) are investigated. It has been found that the ideality factor and barrier heights of identically manufactured Al-Foil/p-type-4H-SiC SBDs showing distinct deviation in their electrical characteristics. An improvement in the ideality factor of Al-Foil/p-type-4H-SiC SBD has been noticed with an increase in temperature. An increase in barrier height in fabricated SBD is also observed with an increase in temperature. We also found that these increases in barrier height, improve ideality factors and abnormalities in their electrical characteristics are due to structural defects initiation, discrete energy level formation, interfacial native oxide layer formation, inhomogenous doping profile distribution and tunneling current formation at the SiC sufaces.

Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP

2012 ◽  
Vol 90 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Lakshmi Devi ◽  
I. Jyothi ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Gaussian Distribution ◽  
Ideality Factor ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Barrier Heights

In this work, we have investigated the electrical characteristics of Au–Cu–n-InP Schottky contacts by current–voltage (I–V) and capacitance–voltage (C–V) measurements in the temperature range 260–420 K in steps of 20 K. The diode parameters, such as the ideality factor, n, and zero-bias barrier height, Φb0, have been found to be strongly temperature dependent. It has been found that the zero-bias barrier height, Φb0(I–V), increases and the ideality factor, n, decreases with an increase in temperature. The forward I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the assumption of gaussian distribution of barrier heights, due to barrier inhomogeneities that prevail at the metal–semiconductor interface. The zero-bias barrier height Φb0 versus 1/2kT plot has been drawn to obtain the evidence of a gaussian distribution of the barrier heights. The corresponding values are Φb0 = 1.16 eV and σ0 = 159 meV for the mean barrier height and standard deviation, respectively. The modified Richardson plot has given mean barrier height, Φb0, and Richardson constant, A**, as 1.15 eV and 7.34 Acm−2K−2, respectively, which is close to the theoretical value of 9.4 Acm−2K−2. Barrier heights obtained from C–V measurements are higher than those obtained from I–V measurements. This inconsistency between Schottky barrier heights (SBHs) obtained from I–V and C–V measurements was also interpreted. The temperature dependence of the I–V characteristics of the Au–Cu–n-InP Schottky diode has been explained on the basis of TE mechanism with gaussian distribution of the SBHs.

An Investigation of the Al/n-GaAs Diodes with High Schottky Barrier Heights

1993 ◽  
Vol 318 ◽  
Author(s):  
C-P. Chen ◽  
Y. A. Chang ◽  
T.F. Kuech
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Cross Section ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Dark Field ◽  
Transmission Electron Microscopy Image ◽  
Transmission Electron

ABSTRACTThermally stable Al/n-GaAs Schottky contacts, up to annealing temperature at 500 °C for 20 seconds, have been realized by sputter deposition from an Al target to (100) n-GaAs at a base pressure ∼2×10−7 Torr. The Schottky barrier height was 0.75 eV (0.9 eV) when using the I-V (C-V) method with an ideality factor of 1.09 for the as-deposited samples. The Schottky barrier height increased to 0.97 eV (1.06 eV) with an ideality factor of 1.07 after annealing at 400 °C for 20 seconds. This barrier height, 0.97 eV, is the highest value reported for Al/n-GaAs diodes. The interfacial stability between Al and GaAs has been examined by cross section transmission electron microscopy. A (200) dark field cross section transmission electron microscopy image of the contact after annealing at 600 °C showed that the (Ga,Al)As phase formed at the interface and the enhancement of the Schottky barrier height was due to the formation of this phase.

Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

2008 ◽  
Vol 63 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Ahmet Faruk Ozdemir ◽  
Adnan Calik ◽  
Guven Cankaya ◽  
Osman Sahin ◽  
Nazim Ucar
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Vickers Microhardness ◽  
Schottky Barrier Diodes ◽  
Microhardness Test ◽  
Current Voltage

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

scholarly journals First principles study of Schottky barriers at Ga2O3(100)/metal interfaces

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14746-14752
Author(s):  
Ran Xu ◽  
Na Lin ◽  
Zhitai Jia ◽  
Yueyang Liu ◽  
Haoyuan Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
First Principles ◽  
High Performance ◽  
Schottky Barrier Height ◽  
Electronic Devices ◽  
Schottky Barriers ◽  
First Principles Study ◽  
Metal Interfaces ◽  
Semiconductor Contact

A low Schottky barrier height (SBH) of metal–semiconductor contact is essential for achieving high performance electronic devices.

Gaussian distribution of Schottky barrier heights on SnO2 nanowires

2011 ◽  
Vol 1406 ◽  
Author(s):  
Cleber A. Amorim ◽  
Olivia M. Berengue ◽  
Luana Araújo ◽  
Edson R. Leite ◽  
Adenilson J. Chiquito
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Series Resistance ◽  
Small Deviation ◽  
Thermionic Emission ◽  
Barrier Heights ◽  
Sno2 Nanowires ◽  
Different Temperatures

ABSTRACTIn this work, we studied metal/SnO2 junctions using transport properties. Parameters such as barrier height, ideality factor and series resistance were estimated at different temperatures. Schottky barrier height showed a small deviation of the theoretical value mainly because the barrier was considered fixed as described by ideal thermionic emission-diffusion model. These deviations have been explained by assuming the presence of barrier height inhomogeneities. Such assumption can also explain the high ideality factor as well as the Schottky barrier height and ideality factor dependence on temperature.

Sign in / Sign up

Export Citation Format

Share Document