scholarly journals Estimation of Number of Graphene Layers Using Different Methods: A Focused Review

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4590
Author(s):  
Vineet Kumar ◽  
Anuj Kumar ◽  
Dong-Joo Lee ◽  
Sang-Shin Park

Graphene, a two-dimensional nanosheet, is composed of carbon species (sp2 hybridized carbon atoms) and is the center of attention for researchers due to its extraordinary physicochemical (e.g., optical transparency, electrical, thermal conductivity, and mechanical) properties. Graphene can be synthesized using top-down or bottom-up approaches and is used in the electronics and medical (e.g., drug delivery, tissue engineering, biosensors) fields as well as in photovoltaic systems. However, the mass production of graphene and the means of transferring monolayer graphene for commercial purposes are still under investigation. When graphene layers are stacked as flakes, they have substantial impacts on the properties of graphene-based materials, and the layering of graphene obtained using different approaches varies. The determination of number of graphene layers is very important since the properties exhibited by monolayer graphene decrease as the number of graphene layer per flake increases to 5 as few-layer graphene, 10 as multilayer graphene, and more than 10 layers, when it behaves like bulk graphite. Thus, this review summarizes graphene developments and production. In addition, the efficacies of determining the number of graphene layers using various characterization methods (e.g., transmission electron microscopy (TEM), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectra and mapping, and spin hall effect-based methods) are compared. Among these methods, TEM and Raman spectra were found to be most promising to determine number of graphene layers and their stacking order.

2011 ◽  
Vol 679-680 ◽  
pp. 797-800 ◽  
Author(s):  
Sushant Sonde ◽  
Carmelo Vecchio ◽  
Filippo Giannazzo ◽  
Corrado Bongiorno ◽  
Salvatore di Franco ◽  
...  

In this study we examined the structural evolution of graphene grown on 8° off-axis 4H-SiC(0001) substrates at temperatures from 1600°C to 1700°C in Ar ambient. Morphological transformation of SiC substrate after annealing was examined by Tapping Mode Atomic Force Microscopy. Moreover, by etching-out graphene layers from graphitized SiC substrates in selective trenches we determined the number of graphene layers. Numbers of graphene layers were then independently confirmed by Transmission Electron Microscopy imaging.


2021 ◽  
Vol 8 (3) ◽  
Author(s):  
Deepak-George Thomas ◽  
Steven De-Alwis ◽  
Shalabh Gupta ◽  
Vitalij K. Pecharsky ◽  
Deyny Mendivelso-Perez ◽  
...  

A facile method to produce few-layer graphene (FLG) nanosheets is developed using protein-assisted mechanical exfoliation. The predominant shear forces that are generated in a planetary ball mill facilitate the exfoliation of graphene layers from graphite flakes. The process employs a commonly known protein, bovine serum albumin (BSA), which not only acts as an effective exfoliation agent but also provides stability by preventing restacking of the graphene layers. The latter is demonstrated by the excellent long-term dispersibility of exfoliated graphene in an aqueous BSA solution, which exemplifies a common biological medium. The development of such potentially scalable and toxin-free methods is critical for producing cost-effective biocompatible graphene, enabling numerous possible biomedical and biological applications. A methodical study was performed to identify the effect of time and varying concentrations of BSA towards graphene exfoliation. The fabricated product has been characterized using Raman spectroscopy, powder X-ray diffraction, transmission electron microscopy and scanning electron microscopy. The BSA-FLG dispersion was then placed in media containing Astrocyte cells to check for cytotoxicity. It was found that lower concentrations of BSA-FLG dispersion had only minute cytotoxic effects on the Astrocyte cells.


2016 ◽  
Vol 29 (5) ◽  
pp. 524-532 ◽  
Author(s):  
Yunlong Li ◽  
Yuying Zheng

A conducting copolymer of 1,1′-ferrocenediacyl anilide and aniline (P(FcA-co-ANI)) was synthesized, which had a conjugated structure and ferrocene moieties in the main chain. The monomer and copolymer were characterized using proton nuclear magnetic resonance and Fourier-transform infrared (FTIR) spectroscopies. A P(FcA-co-ANI)/reduced graphene oxide (rGO) composite was synthesized by oxidation polymerization, using rGO as a substrate. The characteristic peaks of P(FcA-co-ANI) and rGO were observed in the FTIR spectrum of P(FcA-co-ANI)/rGO. The X-ray diffraction pattern of P(FcA-co-ANI)/rGO exhibited similar peaks to the pattern of P(FcA-co-ANI), except for the absence of the weak broad peak at 9.0° owing to rGO. The surface morphologies of the materials were characterized by atomic force microscopy, transmission electron microscopy and scanning electron microscopy. The interlayer distances of rGO and P(FcA-co-ANI)/rGO were 0.96 and 1.38 nm, respectively. The morphology of the copolymer was spherical, and it contained island structures covering the surface of the graphene layers. The electrochemical properties of the composite were measured by cyclic voltammetry, galvanostatic charge–discharge measurements and electrochemical impedance spectroscopy. The maximum specific capacitance of the composite was 722.5 F/g at 0.5 A/g. The diffusion resistance was very small, and the composites durability was sufficient for subjecting to prolonged oxidation and reduction.


2018 ◽  
Vol 3 (1) ◽  
Author(s):  
M. Boutahir ◽  
Ah Rahmani ◽  
H. Chadli ◽  
A. Rahmani

In this theoretical work, the Raman spectra were analyzed by considering the origin of the G peak, its shape, position and relative intensity as a function of the number of graphene layers. By using the spectral moment’s method, the Raman spectra of mono, bi and few-layers of graphene are calculated and a good agreement was found with group theory concerning the number of the Raman-active modes and the Raman measurements. Our results provide a Raman analysis to evaluate the number of layers in multilayer graphene. #Raman_spectroscopy #graphene #graphite


2012 ◽  
Vol 711 ◽  
pp. 141-148 ◽  
Author(s):  
Filippo Giannazzo ◽  
Martin Rambach ◽  
Wielfried Lerch ◽  
Corrado Bongiorno ◽  
Salvatore di Franco ◽  
...  

We present a nanoscale morphological and structural characterization of few layers of graphene grown by thermal decomposition of off-axis 4H-SiC (0001). A comparison between transmission electron microscopy (TEM) in cross-section and in plan view allows to fully exploit the potentialities of TEM. Such a comparison was used to get information on the number of graphene layers as well as on the rotational order between the layers and with respect to the substrate. Some peculiar structures observed by TEM (wrinkles) could only be systematically measured by atomic force microscopy (AFM). In particular, the density and the height of the wrinkles in the few layers of graphene was investigated.


NANO ◽  
2020 ◽  
Vol 15 (10) ◽  
pp. 2050137 ◽  
Author(s):  
Qinke Wu ◽  
Sangjun Jeon ◽  
Young Jae Song

The phase diagram for graphene growth was obtained to understand the physics of the growth mechanism and control the layer number or coverage of graphene deposited on copper via low-pressure chemical vapor deposition (LPCVD). Management of the number of graphene layers and vacancies is essential for producing defect-free monolayer graphene and engineering multilayered functionalized graphene. In this work, the effects of the CH4 and H2 flow rates were investigated to establish the phase diagram for graphene growth. Using this phase diagram, we selectively obtained fully covered and partially grown monolayer graphene, graphene islands through Volmer–Weber growth, and multilayer graphene through Stranski–Krastanov-like growth. The layer numbers and coverage were determined using optical microscopy, scanning electron microscopy, transmission electron microscopy, atomic force microscopy and Raman spectroscopy. The growth modes were determined by the competition between catalytic growth with CH4 and catalytic etching with H2 on the copper surface during CVD growth. Intriguingly, this phase diagram showed that multilayer graphene flakes can be grown via LPCVD even with low CH4 and H2 flows.


Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2849
Author(s):  
Marcin Jan Dośpiał

This paper presents domain and structure studies of bonded magnets made from nanocrystalline Nd-(Fe, Co)-B powder. The structure studies were investigated using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Mössbauer spectroscopy and X-ray diffractometry. On the basis of performed qualitative and quantitative phase composition studies, it was found that investigated alloy was mainly composed of Nd2(Fe-Co)14B hard magnetic phase (98 vol%) and a small amount of Nd1.1Fe4B4 paramagnetic phase (2 vol%). The best fit of grain size distribution was achieved for the lognormal function. The mean grain size determined from transmission electron microscopy (TEM) images on the basis of grain size distribution and diffraction pattern using the Bragg equation was about ≈130 nm. HRTEM images showed that over-stoichiometric Nd was mainly distributed on the grain boundaries as a thin amorphous border of 2 nm in width. The domain structure was investigated using a scanning electron microscope and metallographic light microscope, respectively, by Bitter and Kerr methods, and by magnetic force microscopy. Domain structure studies revealed that the observed domain structure had a labyrinth shape, which is typically observed in magnets, where strong exchange interactions between grains are present. The analysis of the domain structure in different states of magnetization revealed the dynamics of the reversal magnetization process.


1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.


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