scholarly journals Investigation of Phase Segregation in p-Type Bi0.5Sb1.5Te3 Thermoelectric Alloys by In Situ Melt Spinning to Determine Possible Carrier Filtering Effect

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7567
Author(s):  
Dong Ho Kim ◽  
TaeWan Kim ◽  
Se Woong Lee ◽  
Hyun-Sik Kim ◽  
Weon Ho Shin ◽  
...  
Keyword(s):  
Melt Spinning ◽  
Phase Segregation ◽  
Metal Chalcogenides ◽  
Secondary Phases ◽  
Band Bending ◽  
Metal Elements ◽  
Semiconducting Properties ◽  
Filtering Effect ◽  
P Type

One means of enhancing the performance of thermoelectric materials is to generate secondary nanoprecipitates of metallic or semiconducting properties in a thermoelectric matrix, to form proper band bending and, in turn, to induce a low-energy carrier filtering effect. However, forming nanocomposites is challenging, and proper band bending relationships with secondary phases are largely unknown. Herein, we investigate the in situ phase segregation behavior during melt spinning with various metal elements, including Ti, V, Nb, Mo, W, Ni, Pd, and Cu, in p-type Bi0.5Sb1.5Te3 (BST) thermoelectric alloys. The results showed that various metal chalcogenides were formed, which were related to the added metal elements as secondary phases. The electrical conductivity, Seebeck coefficient, and thermal conductivity of the BST composite with various secondary phases were measured and compared with those of pristine BST alloys. Possible band alignments with the secondary phases are introduced, which could be utilized for further investigation of a possible carrier filtering effect when forming nanocomposites.

scholarly journals Segregation of NiTe2 and NbTe2 in p-Type Thermoelectric Bi0.5Sb1.5Te3 Alloys for Carrier Energy Filtering Effect by Melt Spinning

2021 ◽  
Vol 11 (3) ◽  
pp. 910
Author(s):  
Hyun-Sik Kim ◽  
TaeWan Kim ◽  
Jiwoo An ◽  
Dongho Kim ◽  
Ji Hoon Jeon ◽  
...  
Keyword(s):  
Potential Barrier ◽  
Power Factor ◽  
Melt Spinning ◽  
Phonon Scattering ◽  
Synthesis Process ◽  
Secondary Phases ◽  
Spinning Process ◽  
Interface Potential ◽  
Filtering Effect ◽  
P Type

The formation of secondary phases of NiTe2 and NbTe2 in p-type Bi0.5Sb1.5Te3 thermoelectric alloys was investigated through in situ phase separation by using the melt spinning process. Adding stoichiometric Ni, Nb, and Te in a solid-state synthesis process of Bi0.5Sb1.5Te3, followed by rapid solidification by melt spinning, successfully segregated NiTe2 and NbTe2 in the Bi0.5Sb1.5Te3 matrix. Since heterointerfaces of Bi0.5Sb1.5Te3 with NiTe2 and NbTe2 form potential barriers of 0.26 and 0.08 eV, respectively, a low energy carrier filtering effect can be expected; higher Seebeck coefficients and power factors were achieved for Bi0.5Sb1.5Te3(NiTe2)0.01 (250 μV/K and 3.15 mW/mK2), compared to those of Bi0.5Sb1.5Te3 (240 μV/K and 2.69 mW/mK2). However, there was no power factor increase for NbTe2 segregated samples. The decrease in thermal conductivity was seen due to the possible additional phonon scattering by the phase segregations. Consequently, zT at room temperature was enhanced to 0.98 and 0.94 for Bi0.5Sb1.5Te3(NiTe2)0.01 and Bi0.5Sb1.5Te3(NbTe2)0.01, respectively, compared to 0.79 for Bi0.5Sb1.5Te3. The carrier filtering effect induced by NiTe2 segregations with an interface potential barrier of 0.26 eV effectively increased the Seebeck coefficient and power factor, thus improving the zT of p-type Bi0.5Sb1.5Te3, while the interface potential barrier of 0.08 eV of NbTe2 segregation appeared to be too small to induce an effective carrier filtering effect.

In situ TEM observations of melting in nanosized eutectic Pb-Cd inclusions embedded in Al

1996 ◽  
Vol 54 ◽  
pp. 986-987
Author(s):  
S. Hagège ◽  
U. Dahmen ◽  
E. Johnson ◽  
A. Johansen ◽  
V.S. Tuboltsev
Keyword(s):  
Electron Microscope ◽  
Melt Spinning ◽  
Ternary Alloys ◽  
Solid Matrix ◽  
Eutectic System ◽  
In Situ Tem ◽  
In Situ Observation ◽  
Orientation Relationships ◽  
Transmission Electron

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.

scholarly journals Mechanosynthesis and Thermoelectric Properties of Fe, Zn, and Cd-Doped P-Type Tetrahedrite: Cu12-xMxSb4S13

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3448
Author(s):  
Francisco Arturo López Cota ◽  
José Alonso Díaz-Guillén ◽  
Oscar Juan Dura ◽  
Marco Antonio López de la Torre ◽  
Joelis Rodríguez-Hernández ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Powder Processing ◽  
High Energy ◽  
Secondary Phases ◽  
Ambient Conditions ◽  
Cadmium Sulfate ◽  
Electrical Conductivities ◽  
Compositional Changes ◽  
P Type

This contribution deals with the mechanochemical synthesis, characterization, and thermoelectric properties of tetrahedrite-based materials, Cu12-xMxSb4S13 (M = Fe2+, Zn2+, Cd2+; x = 0, 1.5, 2). High-energy mechanical milling allows obtaining pristine and substituted tetrahedrites, after short milling under ambient conditions, of stoichiometric mixtures of the corresponding commercially available binary sulfides, i.e., Cu2S, CuS, Sb2S3, and MS (M = Fe2+, Zn2+, Cd2+). All the target materials but those containing Cd were obtained as single-phase products; some admixture of a hydrated cadmium sulfate was also identified by XRD as a by-product when synthesizing Cu10Cd2Sb4S13. The as-obtained products were thermally stable when firing in argon up to a temperature of 350–400 °C. Overall, the substitution of Cu(II) by Fe(II), Zn(II), or Cd(II) reduces tetrahedrites’ thermal and electrical conductivities but increases the Seebeck coefficient. Unfortunately, the values of the thermoelectric figure of merit obtained in this study are in general lower than those found in the literature for similar samples obtained by other powder processing methods; slight compositional changes, undetected secondary phases, and/or deficient sintering might account for some of these discrepancies.

Low-Temperature LPCVD MEMS Technologies

2002 ◽  
Vol 729 ◽  
Author(s):  
Roger T. Howe ◽  
Tsu-Jae King
Keyword(s):  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Rf Mems ◽  
Sige Layer ◽  
Copper Metallization ◽  
Si Films ◽  
P Type ◽  
Mems Process ◽  
Post Deposition

AbstractThis paper describes recent research on LPCVD processes for the fabrication of high-quality micro-mechanical structures on foundry CMOS wafers. In order to avoid damaging CMOS electronics with either aluminum or copper metallization, the MEMS process temperatures should be limited to a maximum of 450°C. This constraint rules out the conventional polycrystalline silicon (poly-Si) as a candidate structural material for post-CMOS integrated MEMS. Polycrystalline silicon-germanium (poly-SiGe) alloys are attractive for modular integration of MEMS with electronics, because they can be deposited at much lower temperatures than poly-Si films, yet have excellent mechanical properties. In particular, in-situ doped p-type poly-SiGe films deposit rapidly at low temperatures and have adequate conductivity without post-deposition annealing. Poly-Ge can be etched very selectively to Si, SiGe, SiO2 and Si3N4 in a heated hydrogen peroxide solution, and can therefore be used as a sacrificial material to eliminate the need to protect the CMOS electronics during the MEMS-release etch. Low-resistance contact between a structural poly-SiGe layer and an underlying CMOS metal interconnect can be accomplished by deposition of the SiGe onto a typical barrier metal exposed in contact windows. We conclude with directions for further research to develop poly-SiGe technology for integrated inertial, optical, and RF MEMS applications.

Extreme band bending at MBE-grown InAs(001) surfaces induced by in situ sulphur passivation

2002 ◽  
Vol 237-239 ◽  
pp. 196-200 ◽  
Author(s):  
M.J. Lowe ◽  
T.D. Veal ◽  
C.F. McConville ◽  
G.R. Bell ◽  
S. Tsukamoto ◽  
...  
Keyword(s):  
Band Bending

Enhanced Electrochemical Hydrogen Storage Characteristics of the as-Spun Mg2Ni-Type Alloys by Substituting Ni with M (M=Cu, Co)

2012 ◽  
Vol 457-458 ◽  
pp. 572-577
Author(s):  
Yang Huan Zhang ◽  
Bao Wei Li ◽  
Hui Ping Ren ◽  
Zai Guang Pang ◽  
Zhong Hui Hou ◽  
...  
Keyword(s):  
Hydrogen Storage ◽  
Melt Spinning ◽  
Nanocrystalline Structure ◽  
Amorphous Structure ◽  
High Rate ◽  
Electrochemical Performances ◽  
Secondary Phases ◽  
Nanocrystalline And Amorphous ◽  
Electrochemical Hydrogen Storage ◽  
Rate Discharge

Mg2Ni-type Mg20Ni10-xMx (M=Cu, Co; x=0, 1, 2, 3, 4) electrode alloys with nanocrystalline and amorphous structure were synthesized by melt-spinning technique. The microstructures of the as-spun alloys were characterized by XRD, SEM and HRTEM. The electrochemical hydrogen storage properties of the experimental alloys were measured. The obtained results show that the as-spun (M=Cu) alloys hold an entire nanocrystalline structure, whereas the as-spun (M=Co) alloys display a nanocrystalline and amorphous structure, confirming that the substitution of Co for Ni facilitates the glass formation in the Mg2Ni-type alloy. Furthermore, such substitution results in the formation of secondary phases Mg2Cu and MgCo2 instead of changing the major phase of Mg2Ni. The substitution of M (M=Cu, Co) for Ni markedly improves the electrochemical performances of the alloys, involving the discharge capacity and the cycle stability as well as the high rate discharge ability.

scholarly journals The evolution of the metazoan Toll receptor family and its expression during protostome development

2021 ◽  
Author(s):  
Andrea Orús-Alcalde ◽  
Tsai-Ming Lu ◽  
Andreas Hejnol
Keyword(s):  
Phylogenetic Analysis ◽  
Transmembrane Domain ◽  
Leucine Rich Repeat ◽  
Animal Development ◽  
Phylogenetic Studies ◽  
Repeat Domain ◽  
Toll Receptor ◽  
P Type

Abstract Background: Toll-like receptors (TLRs) play a crucial role in immunity and development. They contain leucine-rich repeat domains, one transmembrane domain, and one Toll/IL-1 receptor domain. TLRs have been classified into V-type/scc and P-type/mcc TLRs, based on differences in the leucine-rich repeat domain region. Although TLRs are widespread in animals, detailed phylogenetic studies of this gene family are lacking. Here we aim to uncover TLR evolution by conducting a survey and a phylogenetic analysis in species across Bilateria. To discriminate between their role in development and immunity we furthermore analyzed stage-specific transcriptomes of the ecdysozoans Priapulus caudatus and Hypsibius exemplaris, and the spiralians Crassostrea gigas and Terebratalia transversa.Results: We detected a low number of TLRs in ecdysozoan species, and multiple independent radiations within the Spiralia. V-type/scc and P-type/mcc type-receptors are present in cnidarians, protostomes and deuterostomes, and therefore they emerged early in TLR evolution, followed by a loss in xenacoelomorphs. Our phylogenetic analysis shows that TLRs cluster into three major clades: clade α is present in cnidarians, ecdysozoans, and spiralians; clade β in deuterostomes, ecdysozoans, and spiralians; and clade γ is only found in spiralians. Our stage-specific transcriptome and in situ hybridization analyses show that TLRs are expressed during development in all species analyzed, which indicates a broad role of TLRs during animal development.Conclusions: Our findings suggest that the bilaterian TLRs likely emerged by duplication from a single TLR encoding gene (proto-TLR) present in the last common cnidarian-bilaterian ancestor. This proto-TLR gene duplicated before the split of protostomes and deuterostomes; a second duplication occurred in the lineage to the Trochozoa. While all three clades further radiated in several spiralian lineages, specific TLRs clades have been presumably lost in others. Furthermore, the expression of the majority of these genes during protostome ontogeny suggests their involvement in immunity and development.

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