scholarly journals Electrical Coupling and Simulation of Monolithic 3D Logic Circuits and Static Random Access Memory

Micromachines ◽  
2019 ◽  
Vol 10 (10) ◽  
pp. 637 ◽  
Author(s):  
Ahn ◽  
Choi ◽  
Lim ◽  
Yu

In order to simulate a circuit by applying various logic circuits and full chip using the HSPICE model, which can consider electrical coupling proposed in the previous research, it is investigated whether additional electrical coupling other than electrical coupling by top and bottom layer exists. Additional electrical coupling were verified through device simulation and confirmed to be blocked by heavily doped source/drain. Comparing the HSPICE circuit simulation results using the newly proposed monolithic 3D NAND (M3DNAND) structure in the technology computer-aided design (TCAD) mixed-mode and monolithic 3D inverter (M3DINV) unit cell model was once more verified. It is possible to simulate various logic circuits using the previously proposed M3DINV unit cell model. We simulated the operation and performances of M3DNAND, M3DNOR, 2 × 1 multiplexer (MUX), D flip-flop (D-FF), and static random access memry (SRAM).

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 887
Author(s):  
Tae Jun Ahn ◽  
Yun Seop Yu

The junctionless field-effect transistor (JLFET) compact model using the model parameters extracted from the LETI-UTSOI (version 2.1) model was proposed to perform circuit simulation considering the electrical coupling between the stacked JLFETs of a monolithic 3D integrated circuit (M3DIC) composed of JLFETs (M3DIC-JLFET). We validated the model by extracting the model parameters and comparing the simulation results of the technology computer-aided design and the Synopsys HSPICE circuit simulator. The performance of the M3DIC-JLFET was compared with that of the M3DIC composed of MOSFETs (M3DIC-MOSFET). The performance of a fan-out-3 ring oscillator with M3DIC-JLFET varied by less than 3% compared to that with M3DIC-MOSFET. The performances of ring oscillators of M3DIC-JLFET and M3DIC-MOSFET were almost the same. We simulated the performances of M3DICs such as an inverter, a NAND, a NOR, a 2 × 1 multiplexer, and a D flip-flop. The overall performance of the M3DIC-MOSFET was slightly better than that of the M3DIC-JLFET.


2021 ◽  
Vol 506 ◽  
pp. 230192
Author(s):  
Yunxiang Chen ◽  
Jie Bao ◽  
Zhijie Xu ◽  
Peiyuan Gao ◽  
Litao Yan ◽  
...  

2011 ◽  
Vol 488-489 ◽  
pp. 759-762
Author(s):  
L.Y. Li ◽  
M.H. Aliabadi ◽  
Pi Hua Wen

A Meshfree approach for continuum damage modeling of 3D orthogonal woven composites is presented. Two different shape function constructions, Radial basis (RB) function and Moving kriging (MK) interpolation, are utilized corresponding with Galerkin method in the Meshfree approach. The failure of two different unit cell models, straight-edge and smooth fabric unit cell model respectively, is compared.


2018 ◽  
Vol 53 (11) ◽  
pp. 1425-1436
Author(s):  
PC Upadhyay ◽  
JP Dwivedi ◽  
VP Singh

Coefficients of thermal expansion of some uniaxially fiber-reinforced composites have been evaluated using three-phase unit-cell model. Results have been compared with the values predicted by two other models based on composite cylinders assembly (CCA), and also with some earlier reported experimental values. An extension of the two-phase unit-cell model has also been presented for the evaluation of thermal expansion coefficients of three-phase composites. The formulation has been used to evaluate the overall coefficients of thermal expansion of AS-graphite/epoxy system with a low modulus coating on the fibers. The results have been compared with the results obtained from the Sutcu's recursive concentric cylinders model for composites containing coated fibers. From the comparison of results of the unit-cell models (both, two-phase and three-phase) with the results obtained from some other models available in the literature, it is concluded that the overall thermal properties of fiber-reinforced composites evaluated by the unit-cell model can be used as effectively as by any other model.


2015 ◽  
Vol 118 ◽  
pp. 276-283 ◽  
Author(s):  
X.H. Yang ◽  
S.W. Ren ◽  
W.B. Wang ◽  
X. Liu ◽  
F.X. Xin ◽  
...  

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